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Magnetic Random Access Memory (MRAM)
Springer Series in Surface Sciences, 2002Early magnetic random access memory used the natural hysteresis of magnetic materials to store data by using two or more sets of current•carrying wires or straps. Magnetic elements were arrayed so that only those which were to be written to received a combination of magnetic fields above a write threshold, while the other elements in the array did not ...
Koichiro Inomata, Eiichi Hirota
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Spin-transfer torque magnetic random access memory (STT-MRAM)
ACM Journal on Emerging Technologies in Computing Systems, 2013Spin-transfer torque magnetic random access memory (STT-MRAM) is a novel, magnetic memory technology that leverages the base platform established by an existing 100+nm node memory product called MRAM to enable a scalable nonvolatile memory solution for advanced process nodes. STT-MRAM features fast read and write times, small cell sizes of
Eugene Chen +2 more
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Cell Shape and Patterning Considerations for Magnetic Random Access Memory (MRAM) Fabrication
, 2018 Industrial and academic development laboratories worldwide are working to perfect the circuit designs, fabrication methods and integration schemes required for successful commercial production of Magnetic Random Access Memory (MRAM) devices, a new kind of nonvolatile memory technology that some forecast to be a “universal” memory replacement for DRAM ...
Ditizio, Robert +3 more
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Magnetics Symposium 2014 - Celebrating 50th Anniversary of IEEE Magnetics Society (MSSC50), 2014
Spin-torque transfer magnetic random access memory (STT-MRAM) has emerged as a promising non-volatile memory (NVM) technology, which has compelling advantages in scalability, speed, endurance, and power consumption. In this paper, we first propose a resistance distribution based generic channel model for STT-MRAM.
Kui Cai, Zhiliang Qin
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Spin-torque transfer magnetic random access memory (STT-MRAM) has emerged as a promising non-volatile memory (NVM) technology, which has compelling advantages in scalability, speed, endurance, and power consumption. In this paper, we first propose a resistance distribution based generic channel model for STT-MRAM.
Kui Cai, Zhiliang Qin
exaly +2 more sources
Stacking magnetic random access memory atop microprocessors: an architecture-level evaluation
IET Computers and Digital Techniques, 2011 Magnetic random access memory (MRAM) has been considered as a promising memory technology because of its attractive properties such as non-volatility, fast access, zero standby leakage and high density.
Hai Li
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Japanese Journal of Applied Physics, 2003
We have developed a top free type magnetic tunnel junction (MTJ) patterning technique that involves tunnel barrier etching with enough time margins for chemical assisted ion etching (CAIE). The approximately 1 nm thick tunnel barrier enables stopping the etching process in a shorter time margin.
Kiyokazu Nagahara +4 more
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We have developed a top free type magnetic tunnel junction (MTJ) patterning technique that involves tunnel barrier etching with enough time margins for chemical assisted ion etching (CAIE). The approximately 1 nm thick tunnel barrier enables stopping the etching process in a shorter time margin.
Kiyokazu Nagahara +4 more
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Polar Coding for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM)
2018 IEEE International Magnetics Conference (INTERMAG), 2018Spin-torque transfer magnetic random access memory (STT-MRAM) has emerged as a promising non-volatile memory (NVM) technology with various potential applications such as working as the embedded NVM or replacing the stand alone DRAM [1]. However, STT-MRAM suffers from process variations and thermal fluctuations, leading to both the write errors and read
Z. Mei, K. Cai, B. Dai
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CMOS-based Spin-Transfer Torque Magnetic Random Access Memory (ST–MRAM)
2010Recently it has been demonstrated that the vortex core magnetization can be switched by applying a short (
B. C. Choi +3 more
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Magnetic attack detection in a magnetic random access memory (MRAM)
2021MAHATME NIHAAR N, SHROFF MEHUL D
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Development of self-referenced thermally assisted magnetic random access memory cells (MRAM)
Développement de cellules mémoires magnétiques à accès aléatoire (MRAM) auto-référencées assistées thermiquement L'objectif de cette thèse était la modélisation et la démonstration expérimentale des fonctionnalités de lecture et écriture d'une nouvelle structure de mémoire magnétoresistive à accès aléatoire thermiquement assistée, la ...openaire +1 more source