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Magnetics Symposium 2014 - Celebrating 50th Anniversary of IEEE Magnetics Society (MSSC50), 2014
Spin-torque transfer magnetic random access memory (STT-MRAM) has emerged as a promising non-volatile memory (NVM) technology, which has compelling advantages in scalability, speed, endurance, and power consumption. In this paper, we first propose a resistance distribution based generic channel model for STT-MRAM.
Kui Cai, Zhiliang Qin, Bingjin Chen
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Spin-torque transfer magnetic random access memory (STT-MRAM) has emerged as a promising non-volatile memory (NVM) technology, which has compelling advantages in scalability, speed, endurance, and power consumption. In this paper, we first propose a resistance distribution based generic channel model for STT-MRAM.
Kui Cai, Zhiliang Qin, Bingjin Chen
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Magnetic Random Access Memory (MRAM)
2023Abstract The principle of storing information in a solid state magnetic device is first described together with the principles and early designs of such a system which were implemented for a restricted range of applications. In particular third generation MRAM where again data is stored perpendicular to the plane of the film and is based
K. O’Grady +2 more
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Japanese Journal of Applied Physics, 2003
We have developed a top free type magnetic tunnel junction (MTJ) patterning technique that involves tunnel barrier etching with enough time margins for chemical assisted ion etching (CAIE). The approximately 1 nm thick tunnel barrier enables stopping the etching process in a shorter time margin.
Kiyokazu Nagahara +4 more
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We have developed a top free type magnetic tunnel junction (MTJ) patterning technique that involves tunnel barrier etching with enough time margins for chemical assisted ion etching (CAIE). The approximately 1 nm thick tunnel barrier enables stopping the etching process in a shorter time margin.
Kiyokazu Nagahara +4 more
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Polar Coding for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM)
2018 IEEE International Magnetics Conference (INTERMAG), 2018Spin-torque transfer magnetic random access memory (STT-MRAM) has emerged as a promising non-volatile memory (NVM) technology with various potential applications such as working as the embedded NVM or replacing the stand alone DRAM [1]. However, STT-MRAM suffers from process variations and thermal fluctuations, leading to both the write errors and read
Z. Mei, K. Cai, B. Dai
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Cell Shape and Patterning Considerations for Magnetic Random Access Memory (MRAM) Fabrication
2018Industrial and academic development laboratories worldwide are working to perfect the circuit designs, fabrication methods and integration schemes required for successful commercial production of Magnetic Random Access Memory (MRAM) devices, a new kind of nonvolatile memory technology that some forecast to be a “universal” memory replacement for DRAM ...
Ditizio, Robert +3 more
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CMOS-based Spin-Transfer Torque Magnetic Random Access Memory (ST–MRAM)
2010Recently it has been demonstrated that the vortex core magnetization can be switched by applying a short (
B. C. Choi +3 more
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A Survey of Test and Reliability Solutions for Magnetic Random Access Memories
Proceedings of the IEEE, 2021Arnaud Virazel +2 more
exaly
Magnetic attack detection in a magnetic random access memory (MRAM)
2021MAHATME NIHAAR N, SHROFF MEHUL D
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Development of self-referenced thermally assisted magnetic random access memory cells (MRAM)
Développement de cellules mémoires magnétiques à accès aléatoire (MRAM) auto-référencées assistées thermiquement L'objectif de cette thèse était la modélisation et la démonstration expérimentale des fonctionnalités de lecture et écriture d'une nouvelle structure de mémoire magnétoresistive à accès aléatoire thermiquement assistée, la ...openaire +1 more source
Materials Requirements for Magnetic Random-Access Memory (MRAM) Devices
2005Wolfgang Raberg, Arunava Gupta
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