Results 121 to 130 of about 831 (177)

Cryo-SIMPLY: A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing. [PDF]

Nanomaterials (Basel)
Moposita T, Garzón E, Teman A, Lanuzza M.   +3 more
europepmc   +1 more source

The Solar Wind Electron (SWE) Instrument for the Interstellar Mapping and Acceleration Probe Mission. [PDF]

Space Sci Rev
Skoug RM, Schultz TB, Venhaus DM, Amaya CE, Choedon T, Christian ER, Crosier RD, De Los Santos A, Fernandes PA, Ford JJ, Gkioulidou M, Hanley JJ, Harvey DS, Hoeper PJ, Kubeczka PW, Liu Y, Martinez JP, McComas DJ, Mohr HD, Nunez C, Pacheco TR, Pope SE, Rodriguez H, Sandoval BF, Schiferl CM, Schwadron NA, Spalsbury LC, Seitz DN, Smith RM, Steinberg JT, Storms SA, Toczynski W, Tyler YD, Vigil VJ.   +33 more
europepmc   +1 more source

First-principles study of d⁰ magnetism in a SnI₂ monolayer induced by P and As impurities. [PDF]

RSC Adv
Tan PM, Son NT, Nguyen DK, Guerrero-Sanchez J, Hoat DM.   +4 more
europepmc   +1 more source

Impact of Annealing on Perpendicular Magnetic Anisotropy and Interfacial Diffusion in Ultrathin [CoFeB/Pd]×n Multilayer Film. [PDF]

Nanomaterials (Basel)
Saravanan L, Kumar MP, Ravikumar A, Murugadoss G, Rodríguez-Suárez R, Vojkovic S, Prabhu D, Peera SG, Garcia C.   +8 more
europepmc   +1 more source

Progress of emerging non-volatile memory technologies in industry. [PDF]

MRS Commun
Hellenbrand M, Teck I, MacManus-Driscoll JL.   +2 more
europepmc   +1 more source

Metrics for spin-based computing. [PDF]

Nat Rev Phys
Kurebayashi H, Finocchio G, Everschor-Sitte K, Gartside JC, Taniguchi T, Litvinenko A, Kumar A, Åkerman J, Vasilaki E, Selçuk K, Çamsarı KY, Madhavan A, Fukami S.   +12 more
europepmc   +1 more source

Theoretical Anatomy of Altermagnetic α-MnTe from Magnetism to Triple-resistance States

Deng B, Guo Y, Robertson J, Zhao W, Bluegel S, Lu H.   +5 more
europepmc   +1 more source

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Magnetic Random Access Memory (MRAM)

Journal of Nanoscience and Nanotechnology, 2007
The high density and high speed nonvolatile MTJ MRAMs are reviewed from perspective of the reading and writing operation. The reading operation of the MRAM with different sensing schemes and cell array structures is discussed, in particular the reference resistance generating schemes which are introduced to maximize the cell efficiency and reading ...
Yuankai, Zheng, Yihong, Wu, Kebin, Lil, Jinjun, Qiu, Guchang, Han, Zaibing, Guo, Ping, Luo, Lihua, An, Zhiyong, Liu, Li, Wang, Seng Ghee, Tan, Baoyu, Zong, Bo, Liu   +12 more
exaly   +6 more sources

Spin-transfer torque magnetic random access memory (STT-MRAM)

ACM Journal on Emerging Technologies in Computing Systems, 2013
Spin-transfer torque magnetic random access memory (STT-MRAM) is a novel, magnetic memory technology that leverages the base platform established by an existing 100+nm node memory product called MRAM to enable a scalable nonvolatile memory solution for advanced process nodes. STT-MRAM features fast read and write times, small cell sizes of
Dmytro Apalkov, Alexey Khvalkovskiy, Steven Watts, Vladimir Nikitin, Xueti Tang, Daniel Lottis, Kiseok Moon, Xiao Luo, Eugene Chen, Adrian Ong, Alexander Driskill-Smith, Mohamad Krounbi   +11 more
openaire   +4 more sources

Magnetic Random Access Memory (MRAM)

Springer Series in Surface Sciences, 2002
Early magnetic random access memory used the natural hysteresis of magnetic materials to store data by using two or more sets of current•carrying wires or straps. Magnetic elements were arrayed so that only those which were to be written to received a combination of magnetic fields above a write threshold, while the other elements in the array did not ...
Eiichi Hirota, Hirosi Sakakima, Koichiro Inomata   +2 more
openaire   +3 more sources