Results 91 to 100 of about 16,180,989 (156)

Dynamic and temperature effects in toggle magnetic random access memory [PDF]

, 2007
In this paper we have studied the dynamic switching in magnetic random access memory (MRAM) and its dependence on thermal effects due to a finite temperature.
Stancu, Alexandru, Cimpoesu, Dorin, Spinu, Leonard   +2 more
core  

Accuracy Improvement With Weight Mapping Strategy and Output Transformation for STT-MRAM-Based Computing-in-Memory

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This work presents an analog computing-in-memory (CiM) macro with spin-transfer torque magnetic random access memory (STT-MRAM) and 28-nm CMOS technology.
Xianggao Wang, Na Wei, Shifan Gao, Wenhao Wu, Yi Zhao   +4 more
doaj   +1 more source

Exploiting In-Memory computing for High-Security SOT-MRAM based physical unclonable functions

, 2020
This thesis presents the design of a Spin-Orbit-Torque Magnetic Random Access Memory (SOT-MRAM) based Physical Unclonable Function (PUF), which incorporates Computing-in-Memory (CiM) to enhance the quality and security of the PUF response...Esta ...
Holguín Weber, Eduardo Javier
core  

TGBNN: Training Algorithm of Binarized Neural Network With Ternary Gradients for MRAM-Based Computing-in-Memory Architecture

IEEE Access
To build Neural Networks (NNs) on edge devices, Binarized Neural Network (BNN) has been proposed on the software side, while Computing-in-Memory (CiM) architecture has been proposed on the hardware side.
Yuya Fujiwara, Takayuki Kawahara
doaj   +1 more source

Concealable and Field‐Free Physical Unclonable Function Based on Voltage‐Controlled Magnetic Tunnel Junctions

Advanced Electronic Materials
Physical unclonable functions (PUFs) leverage intrinsic stochastic variations of physical properties to generate secure cryptographic keys. Magnetic random‐access memory (MRAM) is a strong candidate for PUF implementations due to its high density ...
Thomas Neuner, Jaimin Kang, Jordan Athas, Christian Duffee, Noraica Davila Melendez, Jordan A. Katine, Pedram Khalili Amiri   +6 more
doaj   +1 more source

Union Bound Analysis for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM) With Channel Quantization

As an emerging non-volatile memory (NVM) technology, spin-torque transfer magnetic random access memory (STT-MRAM) has received great attention in recent years since it combines the features of low switching energy, fast write/read speed, and high ...
Cai, Kui, Song, Guanghui, Zhong, Xingwei
core  

Vibrational frequencies of magnetic random access memory materials / Lee Li Ling [PDF]

, 2010
The advantages of MRAM are so overwhelming which acts as motivation for scientist in further investigation for better read and write operation. The types of materials used are closely related to the cell performance in forming the ferromagnetic layers ...
Lee, Li Ling
core  

Harnessing orbital Hall effect in spin-orbit torque MRAM

Nature Communications
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient magnetization switching,
Rahul Gupta, Chloé Bouard, Fabian Kammerbauer, J. Omar Ledesma-Martin, Arnab Bose, Iryna Kononenko, Sylvain Martin, Perrine Usé, Gerhard Jakob, Marc Drouard, Mathias Kläui   +10 more
doaj   +1 more source

Comprehensive Device to System Co-Design for SOT-MRAM at the 7 nm Node

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This work presents a comprehensive spin-orbit torque (SOT)-based magnetic random access memory (MRAM) design at the 7 nm technology node, spanning from device-level characteristics to system-level power performance area (PPA).
Piyush Kumar, Da Eun Shim, Azad Naeemi
doaj   +1 more source

Characterisations and reliability of magnetic random access memories (MRAM)

, 2008
Les mémoires magnétiques à accès aléatoires (ou MRAM) sont récemment entrées en production. Ce travail de thèse vise à évaluer et caractériser les problèmes potentiels de fiabilité dus à l'introduction de la partie magnétique dans les mémoires MRAM.
openaire   +1 more source