Results 41 to 50 of about 16,180,989 (156)

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Programmable Topological Magnetic Textures in Above‐Room‐Temperature 2D Ferromagnet Fe3GaTe2

Advanced Science, EarlyView.
This work demonstrates the programmable generation and deterministic modulation of magnetic skyrmion bags with high‐order topological numbers in the above‐room‐temperature 2D ferromagnet Fe3GaTe2 (FGaT) via current‐pulse control. Furthermore, highly efficient electrical manipulation and current‐driven parallel motion of these high‐order topological ...
Hanqing Shi, Yilian Xi, Jingwei Zhang, Jiaqi Liu, Zhizhen Ren, Shilei Zhang, Weichang Hao, Haifeng Feng, Yi Du   +8 more
wiley   +1 more source

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nanoscale 3D magnetic random-access-memory devices

APL Materials, 2022
Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJs) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, while retaining their thermal stability ...
Trevor P. Almeida, Alvaro Palomino, Steven Lequeux, Victor Boureau, Olivier Fruchart, Ioan Lucian Prejbeanu, Bernard Dieny, David Cooper   +7 more
doaj   +1 more source

Van der Waals Heterostructures for Next‐Generation Spintronics: Multiferroic‐Mediated Magnetoelectric Properties

Advanced Science, EarlyView.
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee, Jiwoong Yang, Inhyeok Oh, Sanghan Lee   +3 more
wiley   +1 more source

Spin-based magnetic random-access memory for high-performance computing [PDF]

, 2023
Memory serves as a critical component in today’s electronic systems for data storage and processing. In traditional computer architectures, the logic and memory units are physically separated, due to the performance gap in operational speed and capacity ...
Tianli Jin, Kaiming Cai, Jin, Tianli, Wen Siang Lew, Cai, Kaiming, Lew, Wen Siang   +5 more
core   +1 more source

A Radiation-Hardened Triple Modular Redundancy Design Based on Spin-Transfer Torque Magnetic Tunnel Junction Devices

Applied Sciences
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows ...
Shubin Zhang, Peifang Dai, Ning Li, Yanbo Chen   +3 more
doaj   +1 more source

Nickel Intercalation in Epitaxial Graphene on SiC(0001): A Novel Platform for Engineering Two‐Dimensional Heterostructures

Advanced Science, EarlyView.
Ni‐intercalated graphene on SiC is achieved through a scalable colloidal nanoparticle deposition route. 2D heterostructures show preserved graphene band structure, stable under ambient conditions, and robust interfacial magnetism. Intercalated 2D Ni represents a promising candidate for next‐generation spintronic devices and is a scalable pathway to ...
Ylea Vlamidis, Stiven Forti, Antonio Rossi, Arrigo Calzolari, Carmela Marinelli, Camilla Coletti, Stefan Heun, Stefano Veronesi   +7 more
wiley   +1 more source

Ultralow Electrical Current Driven Field‐Free Spin‐Orbit Torque Switching of Magnetic Tunnel Junctions by Topological Insulators

Advanced Electronic Materials
Spin‐orbit torque‐driven magnetic random‐access memory (SOT‐MRAM) is one of the promising candidates for next‐generation memory technologies beyond Moore's law.
Xu Zhang, Aitian Chen, Yifan Zhang, Zhaozhuo Zeng, Yaqin Guo, Dongxing Zheng, Baoshan Cui, Chuangwen Wu, Wenjie Song, Shuo Yang, Zijun Luo, Jingfeng Li, Gianluca Gubbiotti, Xiufeng Han, Jinkui Zhao, Peng Yan, Xufeng Kou, Xixiang Zhang, Hao Wu   +18 more
doaj   +1 more source

A Dual‐Programmable 2M NOR Flash Architecture for Energy‐Efficient In‐Memory Computing

Advanced Science, EarlyView.
In conventional NOR Flash, the access transistor occupies area but stores no information. Here, it is repurposed as a programmable second memory device that plays two functional roles: an analog memory element that lowers the minimum read current from 72.7 nA to 4.22 pA, and a current‐path gating element enabling true‐off pruning and current‐range ...
Suhan Kim, Donghyun Ryu, Hyoseob Kim, Sangwoo Jung, Min‐Hwi Kim   +4 more
wiley   +1 more source

A novel SRAM -STT-MRAM hybrid cache implementation improving cache performance

, 2017
International audienceMemories are currently a real bottleneck to design high speed and energy-efficient systems-on-chip. A significant increase of the performance gap between processors and memories is observed.
Coi, Odilia, Patrigeon, Guillaume, Senni, Sophiane, Sophiane Senni, Benoit, Pascal, Torres, Lionel, Odilia Coi, Pascal Benoit, Guillaume Patrigeon, Lionel Torres   +9 more
core   +1 more source