Results 41 to 50 of about 831 (177)

A Radiation-Hardened Triple Modular Redundancy Design Based on Spin-Transfer Torque Magnetic Tunnel Junction Devices

Applied Sciences
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows ...
Shubin Zhang, Peifang Dai, Ning Li, Yanbo Chen   +3 more
doaj   +1 more source

Van der Waals Heterostructures for Next‐Generation Spintronics: Multiferroic‐Mediated Magnetoelectric Properties

Advanced Science, EarlyView.
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee, Jiwoong Yang, Inhyeok Oh, Sanghan Lee   +3 more
wiley   +1 more source

Ultralow Electrical Current Driven Field‐Free Spin‐Orbit Torque Switching of Magnetic Tunnel Junctions by Topological Insulators

Advanced Electronic Materials
Spin‐orbit torque‐driven magnetic random‐access memory (SOT‐MRAM) is one of the promising candidates for next‐generation memory technologies beyond Moore's law.
Xu Zhang, Aitian Chen, Yifan Zhang, Zhaozhuo Zeng, Yaqin Guo, Dongxing Zheng, Baoshan Cui, Chuangwen Wu, Wenjie Song, Shuo Yang, Zijun Luo, Jingfeng Li, Gianluca Gubbiotti, Xiufeng Han, Jinkui Zhao, Peng Yan, Xufeng Kou, Xixiang Zhang, Hao Wu   +18 more
doaj   +1 more source

Nickel Intercalation in Epitaxial Graphene on SiC(0001): A Novel Platform for Engineering Two‐Dimensional Heterostructures

Advanced Science, EarlyView.
Ni‐intercalated graphene on SiC is achieved through a scalable colloidal nanoparticle deposition route. 2D heterostructures show preserved graphene band structure, stable under ambient conditions, and robust interfacial magnetism. Intercalated 2D Ni represents a promising candidate for next‐generation spintronic devices and is a scalable pathway to ...
Ylea Vlamidis, Stiven Forti, Antonio Rossi, Arrigo Calzolari, Carmela Marinelli, Camilla Coletti, Stefan Heun, Stefano Veronesi   +7 more
wiley   +1 more source

Unveiling the endurance limit of SOT-MRAM with CoFeB/MgO/CoFeB junctions: From elemental interdiffusion to array-level reliability

Nano Research
Spin-orbit torque magnetic random access memory (SOT-MRAM), which is theoretically predicted with “unlimited” endurance, has been regarded as a promising alternative to conventional static random access memory (SRAM)-based L1 to L3 caches in advanced ...
Chuanpeng Jiang, Jinhao Li, Chao Wang, Shiyang Lu, Xingyu Yao, Wenlong Cai, Danrong Xiong, Xiaofei Fan, Hong-Xi Liu, Gefei Wang, He Zhang, Kaihua Cao, Zhaohao Wang, Weisheng Zhao   +13 more
doaj   +1 more source

Practical Experiments to Evaluate Quality Metrics of MRAM-Based Physical Unclonable Functions

IEEE Access, 2020
Process variations in the manufacturing of digital circuits can be leveraged to design Physical Unclonable Functions (PUFs) that are extensively employed in hardware-based security.
Arash Nejat, Frederic Ouattara, Mohammad Mohammadinodoushan, Bertrand Cambou, Ken Mackay, Lionel Torres   +5 more
doaj   +1 more source

A Dual‐Programmable 2M NOR Flash Architecture for Energy‐Efficient In‐Memory Computing

Advanced Science, EarlyView.
In conventional NOR Flash, the access transistor occupies area but stores no information. Here, it is repurposed as a programmable second memory device that plays two functional roles: an analog memory element that lowers the minimum read current from 72.7 nA to 4.22 pA, and a current‐path gating element enabling true‐off pruning and current‐range ...
Suhan Kim, Donghyun Ryu, Hyoseob Kim, Sangwoo Jung, Min‐Hwi Kim   +4 more
wiley   +1 more source

Spintronics and magnetic memory devices

Advances in Physics: X
Spintronics technology enables electrical reading and writing of magnetization orders, thus have led to development of magnetic random access memory (MRAM).
Gyung-Min Choi, OukJae Lee, Sunjae Chung, Woojin Kim, Taeyoung Lee, Byong-Guk Park, Seungmo Yang   +6 more
doaj   +1 more source

Practical Experiments on Fabricated TAS-MRAM Dies to Evaluate the Stochastic Behavior of Voltage-Controlled TRNGs

IEEE Access, 2019
Noises exist in digital circuits can be leveraged as the source of entropy to design true random numbers generators (TRNGs), which is an important primitive component in cryptography and hardware-based security applications.
Frederic Ouattara, Arash Nejat, Lionel Torres, Ken Mackay   +3 more
doaj   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source