Results 11 to 20 of about 16,180,989 (156)
Recent progress in spin-orbit torque magnetic random-access memory
npj SpintronicsSpin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes.
V. D. Nguyen +3 more
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Automotive embedded systems software reprogramming [PDF]
, 2012 This thesis was submitted for the degree of Doctor of Philosophy and was awarded by Brunel UniversityThe exponential growth of computer power is no longer limited to stand alone computing systems but applies to all areas of commercial embedded computing ...
Schmidgall, Ralf
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Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory
IEEE Journal of the Electron Devices Society, 2020 As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties needed to
Xiang Li +7 more
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IEEE Access, 2023 Spin-torque-transfer magnetic random access memory (STT-MRAM) has recently emerged as a promising technology to replace dynamic random access memory (DRAM).
Thien An Nguyen, Jaejin Lee
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IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2017 The spin transfer torque magnetoresistive random access memory (STT-MRAM) is the leading candidate for spin-based memories. Nevertheless, the high write energy and read disturbance of the STT-MRAM motivated researchers to find other solutions.
Ibrahim Ahmed +5 more
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MTJ-based random number generation and its application in SNN handwritten digits recognition
AIP Advances, 2023 Spiking Neural Networks (SNNs) that require synapse weight initialization using random numbers have been widely used in the neural morphological system. However, the random numbers generated by traditional digital circuits have certain repeatability, and
Xiaomi Chen +4 more
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Memristor-based Random Access Memory: The delayed switching effect could revolutionize memory design [PDF]
, 2015 Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to
Wang, Frank Z. +6 more
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Magnetic random access memory (MRAM) cells with perpendicular anisotropy polariser
, 2011 Cette thèse est consacrée à l’intégration d’un polariseur à anisotropie perpendiculaire dans une jonction tunnel magnétique aux aimantations planaires. Par effet du transfert de spin venant du polariseur perpendiculaire, il est possible d’induire des oscillations de l’aimantation de la couche libre.
Marins de Castro Souza, Maria
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High-Density 1R/1W Dual-Port Spin-Transfer Torque MRAM
Micromachines, 2022 Spin-transfer torque magnetic random-access memory (STT-MRAM) has several desirable features, such as non-volatility, high integration density, and near-zero leakage power.
Yeongkyo Seo, Kon-Woo Kwon
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Magnetic Random Access Memory (MRAM) Device Development [PDF]
, 2000 The recent discovery of materials that have anomalous magneto-resistive properties has generated renewed commercial interest in metal-based fast memory storage as an alternative to the currently used semiconductor-based devices. One particularly promising ternary alloy, fabricated at LLNL, appeared to have exceptional field response.
Cerjan, C, Law, B P
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