Results 101 to 110 of about 5,284 (228)

Optimization of the 3D multi-level SOT-MRAMs

AIP Advances
With the development of electronic technology, semiconductor memory is gradually shifting toward smaller area with less power consumption. SOT-MRAM is one of the competitive substitutes for DRAM and SRAM due to its superior endurance and switching speed.
Hui Lin, Yanfeng Jiang
doaj   +1 more source

Research on the Possibilities of Reusing Mixed Reclaimed Asphalt Materials with a Focus on the Circular Economy

Applied Sciences
This article presents the results of a 10-year research study on the possibilities of implementing circular economy principles into the recovery of construction waste in road construction and paving traffic areas.
Martin Decký, Eva Remišová, Martin Samek   +2 more
doaj   +1 more source

Circuit and microarchitecture evaluation of 3D stacking magnetic RAM (MRAM) as a universal memory replacement

, 2008
Magnetic Random Access Memory (MRAM) has been considered as a promising memory technology due to many attractive properties. Integrating MRAM with CMOS logic may incur extra manufacture cost, due to its hybrid magnetic-CMOS fabrication process.
Wu, Xiaoxia, Dong, Xiangyu, Xie, Yuan, Li, Helen, Sun, Guangyu, Chen, Yiran   +5 more
core   +1 more source

Unveiling the endurance limit of SOT-MRAM with CoFeB/MgO/CoFeB junctions: From elemental interdiffusion to array-level reliability

Nano Research
Spin-orbit torque magnetic random access memory (SOT-MRAM), which is theoretically predicted with “unlimited” endurance, has been regarded as a promising alternative to conventional static random access memory (SRAM)-based L1 to L3 caches in advanced ...
Chuanpeng Jiang, Jinhao Li, Chao Wang, Shiyang Lu, Xingyu Yao, Wenlong Cai, Danrong Xiong, Xiaofei Fan, Hong-Xi Liu, Gefei Wang, He Zhang, Kaihua Cao, Zhaohao Wang, Weisheng Zhao   +13 more
doaj   +1 more source

Field-free spin–orbit torque devices for logic and neural network applications

APL Machine Learning
Robust field-free spin–orbit torque (SOT) switching plays an essential role in realizing practical SOT-based magnetic memories and logic devices. Leveraging the strong interlayer Dzyaloshinskii–Moriya interaction, field-free SOT switching is achieved ...
Chun-Yi Lin, Jui-Yu Hsieh, Po-Chuan Wang, Chia-Chin Tsai, Chi-Feng Pai   +4 more
doaj   +1 more source

Design of a full 1Mb STT-MRAM based on advanced FDSOI technology

MATEC Web of Conferences, 2017
In one hand, the shrinking of CMOS technology nodes is dramatically increasing the leakage current in integrated circuits. In the other hand, modern portable devices first concern is power-efficiency to insure a better autonomy.
Jabeur Kotb, Prenat Guillaume
doaj   +1 more source

Multi-bit MRAM based high performance neuromorphic accelerator for image classification

Neuromorphic Computing and Engineering
Binary neural networks (BNNs) are the most efficient solution to bridge the design gap of the hardware implementation of neural networks in a resource-constrained environment.
Gaurav Verma, Sandeep Soni, Arshid Nisar, Brajesh Kumar Kaushik   +3 more
doaj   +1 more source

A Study of Multiple-Valued Magnetoresistive RAM (MRAM) Using Binary MTJ Devices

, 2008
This paper presents four-valued magnetoresistive RAM (MRAM) storage cells using one access transistor and two binary magnetic tunnel junction (MTJ) devices with the MTJ devices either in series or in parallel.
Takahiro Hanyu, Kostas Pagiamtzis, Ali Sheikholeslami, Hiromitsu Kimura   +3 more
core  

Design and applications of MRAM based on heterogeneous integration

Gongneng cailiao yu qijian xuebao
In the post-Moore Era, the dual bottlenecks of the "Memory Wall" and "Power Wall" constrain the performance enhancement of electronic systems. Magnetoresistive random access memory (MRAM), with its non-volatility, high integration density, and ...
Guoqiang ZHAO, Yi ZHAO
doaj   +1 more source

A Detailed Study of SOT-MRAM as an Alternative to DRAM Primary Memory in Multi-Core Environment

IEEE Access
As the current primary memory technology is reaching its limits, it is essential to explore alternative memory technologies to accommodate modern applications and use cases.
H. D. Kallinatha, Sadhana Rai, Basavaraj Talawar   +2 more
doaj   +1 more source