Results 101 to 110 of about 5,091 (240)

Automated characterization of TAS-MRAM test arrays

, 2015
In this work the characterization results of 1kbit TAS-MRAM arrays obtained through RIFLE Automated Test Equipment of 1Kbit array are reported. Such ATE, ensuring flexibility in terms of signals and timing, allowed evaluating hysteresis and to perform ...
Cristian Zambelli, Mackay, Ken, Grossi, Alessandro, Paolo Pellati, Alvarez Herault, Jeremy, Pellati, Paolo, Zambelli, Cristian, Alessandro Grossi, Olivo, Piero, Ramponi, Michele, Jeremy Alvarez-Herault, Michele Ramponi, Ken Mackay, Piero Olivo   +13 more
core   +1 more source

Optimization of the 3D multi-level SOT-MRAMs

AIP Advances
With the development of electronic technology, semiconductor memory is gradually shifting toward smaller area with less power consumption. SOT-MRAM is one of the competitive substitutes for DRAM and SRAM due to its superior endurance and switching speed.
Hui Lin, Yanfeng Jiang
doaj   +1 more source

Research on the Possibilities of Reusing Mixed Reclaimed Asphalt Materials with a Focus on the Circular Economy

Applied Sciences
This article presents the results of a 10-year research study on the possibilities of implementing circular economy principles into the recovery of construction waste in road construction and paving traffic areas.
Martin Decký, Eva Remišová, Martin Samek   +2 more
doaj   +1 more source

Selective Tuning of Perpendicular Magnetic Anisotropy and Dzyaloshinskii–Moriya Interaction in Heterostructures Compatible with Magnetic Tunnel Junctions

Advanced Electronic Materials, Volume 12, Issue 18, 21 September 2026.
ABSTRACT Chirally coupled magnetic tunnel junctions (MTJs) have been proposed as a route toward compact spin logic architectures. Micromagnetic simulations indeed show that chiral coupling between adjacent MTJs with perpendicular magnetic anisotropy (PMA) can be achieved through an in‐plane (IP) interconnection mediated by the Dzyaloshinskii–Moriya ...
Bob Vermeulen, Seongbin Seo, Domenico Giuliano, Jyotirmoy Chatterjee, Giacomo Talmelli, Robert Carpenter, Yann Canvel, Yanan Li, Björn Heinz, Philipp Pirro, Bart Sorée, Kristiaan Temst, Van Dai Nguyen, Gouri Sankar Kar, Siddharth Rao   +14 more
wiley   +1 more source

Testing MRAM for Write Disturbance Fault

, 2009
[[abstract]]© 2006 Institute of Electrical and Electronics Engineers -The magnetic random access memory (MRAM) is considered one of the potential candidates that will replace current on-chip memories (RAM, EEPROM, and flash memory) in the future.
Chin-Lung Su;Chih-Wea Tsai;Cheng-Wen Wu;Chien-Chung Hung;Young-Shying Chen;Ming-Jer Kao
core   +1 more source

Unveiling the endurance limit of SOT-MRAM with CoFeB/MgO/CoFeB junctions: From elemental interdiffusion to array-level reliability

Nano Research
Spin-orbit torque magnetic random access memory (SOT-MRAM), which is theoretically predicted with “unlimited” endurance, has been regarded as a promising alternative to conventional static random access memory (SRAM)-based L1 to L3 caches in advanced ...
Chuanpeng Jiang, Jinhao Li, Chao Wang, Shiyang Lu, Xingyu Yao, Wenlong Cai, Danrong Xiong, Xiaofei Fan, Hong-Xi Liu, Gefei Wang, He Zhang, Kaihua Cao, Zhaohao Wang, Weisheng Zhao   +13 more
doaj   +1 more source

Neuromorphic Hardware Materials for Intelligent Artificial Perception and Multimodal Fusion: From Sensing to Cognition

Interdisciplinary Materials, Volume 5, Issue 5, Page 699-727, September 2026.
Neuromorphic hardware enables the integration of sensing, memory, and computing for intelligent artificial perception. Recent advances in multimodal fusion further highlight its potential for embodied intelligence and next‐generation human–machine interfaces.
Yixin Zhu, Yuqing Hu, Changjin Wan, Qing Wan   +3 more
wiley   +1 more source

Field-free spin–orbit torque devices for logic and neural network applications

APL Machine Learning
Robust field-free spin–orbit torque (SOT) switching plays an essential role in realizing practical SOT-based magnetic memories and logic devices. Leveraging the strong interlayer Dzyaloshinskii–Moriya interaction, field-free SOT switching is achieved ...
Chun-Yi Lin, Jui-Yu Hsieh, Po-Chuan Wang, Chia-Chin Tsai, Chi-Feng Pai   +4 more
doaj   +1 more source

Design of a full 1Mb STT-MRAM based on advanced FDSOI technology

MATEC Web of Conferences, 2017
In one hand, the shrinking of CMOS technology nodes is dramatically increasing the leakage current in integrated circuits. In the other hand, modern portable devices first concern is power-efficiency to insure a better autonomy.
Jabeur Kotb, Prenat Guillaume
doaj   +1 more source

Electrically Switchable Altermagnetism in Monolayer MoCl3

Rare Metals, Volume 45, Issue 9, September 2026.
ABSTRACT Altermagnets intertwine spin‐split bands with vanishing net magnetization, offering great potential for high‐density, stray‐field‐free spintronic devices. However, their development is hindered by both material scarcity and difficulties in external control due to their intrinsic symmetry protection.
Zhengming Zhang, Zhenyu Fan, Dunhui Wang
wiley   +1 more source