Results 111 to 120 of about 5,284 (228)

Recent progress in spin-orbit torque magnetic random-access memory

npj Spintronics
Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes.
V. D. Nguyen, S. Rao, K. Wostyn, S. Couet   +3 more
doaj   +1 more source

Energy-Aware Physical Unclonable Functions: From Physical Entropy Sources to MRAM-Based Low-Power Hardware Roots of Trust

Journal of Low Power Electronics and Applications
Physical unclonable functions (PUFs) convert device-specific physical variations into responses for chip identity, key reconstruction, secure boot, and hardware roots of trust.
Jian Yang, Yanfeng Jiang
doaj   +1 more source

Building energy-efficient multi-level cell STT-MRAM based cache through dynamic data-resistance encoding

, 2014
With attractive advantages like high density and low leakage, Spin-Transfer Torque Magnetoresistive RAM (STT-MRAM) is a promising candidate to replace conventional SRAM technology to build large-size and low-power on-chip caches.
Cong Xu, Chi, Ping, Yuan Xie, Xie, Yuan, Ping Chi, Xiaochun Zhu, Zhu, Xiaochun, Xu, Cong   +7 more
core   +1 more source

A novel SRAM -STT-MRAM hybrid cache implementation improving cache performance

, 2017
International audienceMemories are currently a real bottleneck to design high speed and energy-efficient systems-on-chip. A significant increase of the performance gap between processors and memories is observed.
Coi, Odilia, Patrigeon, Guillaume, Senni, Sophiane, Sophiane Senni, Benoit, Pascal, Torres, Lionel, Odilia Coi, Pascal Benoit, Guillaume Patrigeon, Lionel Torres   +9 more
core   +1 more source

Towards Efficient SOT-Assisted STT-MRAM Cell Switching Using Reinforcement Learning

Nonvolatile memory is a promising candidate to replace CMOS devices with the two most common magnetoresistive RAM (MRAM) cell types being spin-transfer torque (STT-)MRAM and spin-orbit torque (SOT-)MRAM.
Sverdlov, Viktor, Gös, Wolfgang, Lacerda de Orio, Roberto, Ender, Johannes   +3 more
core   +1 more source

On-chip MRAM as a High-Bandwidth, Low-Latency Replacement for DRAM Physical Memories

, 2002
Impediments to main memory performance have traditionally been due to the divergence in processor versus memory speed and the pin bandwidth limitations of modern packaging technologies.
W. Keckler, Doug Burger, R. Lefurgyýstephen   +2 more
core  

New hard layer design of MRAM based on ring elements.

, 2006
New hard layer design of MRAM based on ring ...
Anand Subra. Mani (7987835)
core   +2 more sources

Toggle SOT-MRAM Architecture With Self-Terminating Write Operation

[EN]Toggle spin-orbit torque (SOT)-driven magnetoresistive random access memory (MRAM) with perpendicular anisotropy has a simple material stack and is more robust than directional SOT-MRAM.
Hassan, Naimul, Friedman, Joseph S., García Sánchez, Felipe, Usih, Ebenezer C., Khalili Amiri, Pedram, Edwards, Alexander J.   +5 more
core   +1 more source

Fabrication of MRAM-type Structure and Their Magnetic Properties [PDF]

The characteristic points of MRAM are compared with those of DRAM, Flash memory, SRAM, and FeRAM. The differences in PSV-MRAM and MTJ-MRAM are discussed in terms of the directions of sense current, CIP or CPP, and connections of CMOS with MR elements. An
CASTANO, Fernando J., ほか, ROSS, Caroline A., 原谷, 進, カスターノ, フェルナンド J., ロス, キャロラインA., HARATANI, Susumu   +6 more
core  

Wafer-scale SOT-MRAM for analog crossbar array applications. [PDF]

Sci Adv
Liu S, Rogers V, Hu CY, Song MY, Bao X, Incorvia JAC.   +5 more
europepmc   +1 more source