Results 111 to 120 of about 5,091 (240)

Analysis of MRAM applications

, 2002
Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2002.Includes bibliographical references (p. 45-47).Magnetic Random Access Memory (MRAM) is considered to be the most viable option for nonvolatile memory
Hernandez, Allison, 1979-
core  

Multi-bit MRAM based high performance neuromorphic accelerator for image classification

Neuromorphic Computing and Engineering
Binary neural networks (BNNs) are the most efficient solution to bridge the design gap of the hardware implementation of neural networks in a resource-constrained environment.
Gaurav Verma, Sandeep Soni, Arshid Nisar, Brajesh Kumar Kaushik   +3 more
doaj   +1 more source

MODELING OF MTJ AND ITS VALIDATION USING NANOSCALE MRAM BITCELL [PDF]

Journal of Engineering Science and Technology, 2017
Magnetic Tunnel Junction (MTJ) is a promising candidate for nonvolatile and low power memory design. MTJ is basic building block of STT-MRAM bitcell.
CHANDRAMAULESHWAR ROY, ARUNDHATI BHATTACHARYA, A. ISLAM   +2 more
doaj  

Nitrogen‐Doped GeTeS Ovonic Threshold Switching Selector With Optimized Performance Trade‐Off for 1S–1R Phase‐Change Memory

Small, Volume 22, Issue 53, 21 September 2026.
This study introduced a Ge‐Te‐S co‐sputtering process to resolve the performance trade‐off between GeTe and GeS in OTS selector devices, and improved device durability through nitrogen doping. Furthermore, in a 1S‐1R structure incorporating phase‐change memory devices, it simultaneously achieved excellent thermal stability, durability, high‐speed ...
Min Su Kang, Jong Min Joo, Jun Young Choi, Ji Eun Park, Dong Hyun Kim, Jin Suk Oh, Tae Geun Kim   +6 more
wiley   +1 more source

Integration technologies for scalable high density MRAM

, 2005
We investigate the key factors for scalable high density MRAM. Specifically we examine problems such as large switching field, small sensing margin and writing disturbance following a decrease in size.
Lee, S. Y., Ryoo, K. C., Ahn, S. J., Yang, F., Jeong, Changwook, Jeong, W. C., Jeong, G. T., Shin, J. M., Kim, Kinam, Hwang, Y. N., Koh, G. H., Jeong, H. S., Lee, S. H., Park, Jonghyun, Oh, J. H., Park, J. H.   +15 more
core   +1 more source

Caractérisation sécuritaire des mémoires magnétiques MRAM

, 2015
MRAM (magnetoresistive RAM) is an emergent non-volatile memory technology; it has the particularity to store data in magnetic moments orientations. It has very interesting characteristics that overwhelm mature technologies on several points.
Sarno, Thomas
core  

Design and applications of MRAM based on heterogeneous integration

Gongneng cailiao yu qijian xuebao
In the post-Moore Era, the dual bottlenecks of the "Memory Wall" and "Power Wall" constrain the performance enhancement of electronic systems. Magnetoresistive random access memory (MRAM), with its non-volatility, high integration density, and ...
Guoqiang ZHAO, Yi ZHAO
doaj   +1 more source

A Detailed Study of SOT-MRAM as an Alternative to DRAM Primary Memory in Multi-Core Environment

IEEE Access
As the current primary memory technology is reaching its limits, it is essential to explore alternative memory technologies to accommodate modern applications and use cases.
H. D. Kallinatha, Sadhana Rai, Basavaraj Talawar   +2 more
doaj   +1 more source

MRAM - Preliminary Analysis for File System Design

, 2002
Recent improvements in nonvolatile memory technology show a promise for the replacement of currently used DRAM. Magnetic memory (MRAM) with its low access times and comparable cost per byte to DRAM is a good candidate.
Alicja Beata Szczurowska
core  

Recent progress in spin-orbit torque magnetic random-access memory

npj Spintronics
Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes.
V. D. Nguyen, S. Rao, K. Wostyn, S. Couet   +3 more
doaj   +1 more source