Results 111 to 120 of about 4,033 (229)

Toggle SOT-MRAM Architecture With Self-Terminating Write Operation [PDF]

[EN]Toggle spin-orbit torque (SOT)-driven magnetoresistive random access memory (MRAM) with perpendicular anisotropy has a simple material stack and is more robust than directional SOT-MRAM.
Hassan, Naimul, Friedman, Joseph S., García Sánchez, Felipe, Usih, Ebenezer C., Khalili Amiri, Pedram, Edwards, Alexander J.   +5 more
core   +1 more source

A Detailed Study of SOT-MRAM as an Alternative to DRAM Primary Memory in Multi-Core Environment

IEEE Access
As the current primary memory technology is reaching its limits, it is essential to explore alternative memory technologies to accommodate modern applications and use cases.
H. D. Kallinatha, Sadhana Rai, Basavaraj Talawar   +2 more
doaj   +1 more source

Recent progress in spin-orbit torque magnetic random-access memory

npj Spintronics
Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes.
V. D. Nguyen, S. Rao, K. Wostyn, S. Couet   +3 more
doaj   +1 more source

An analysis of MRAM based memory technologies [PDF]

, 2006
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.Includes bibliographical references (leaves 66-68).MRAM is a memory (RAM) technology that uses electron spin to store information. Often been called
Vijayaraghavan, Rangarajan, M. Eng. Massachusetts Institute of Technology
core  

Macro model and sense amplifier for a MRAM [PDF]

, 2017
For the simulation of the architecture for a magnetoresistive random access memory (MRAM) based on GMR (giant magnetoresistance) and a MTJ (magnetic tunnel junction) cell having a hysteretic characteristics, a macro model showing this hysteresis is ...
신형순
core  

A Novel Self-Reference Sensing Scheme for MLC MRAM [PDF]

, 2017
Magnetic random access memory (MRAM) is a promising nonvolatile memory technology targeted on on-chip or embedded applications. Storage density is one of the major design concerns of MRAM.
Li, Zheng
core  

Automatic Regression Framework for MRAM Compact Models Calibration including Stochasticity [PDF]

This paper introduces a comprehensive optimization framework designed to enhance the regression of physical parameters for MRAM technologies, including STT-MRAM, VCMA, and SOT devices.
Bardon, Marie Garcia, Redondo, Fernando Garcia, Wang, Bowen, Graindorge, Pierre   +3 more
core   +1 more source

Automotive embedded systems software reprogramming [PDF]

, 2012
This thesis was submitted for the degree of Doctor of Philosophy and was awarded by Brunel UniversityThe exponential growth of computer power is no longer limited to stand alone computing systems but applies to all areas of commercial embedded computing ...
Schmidgall, Ralf
core  

Complementary Polarizer SOT-MRAM for Low-Power and Robust On-Chip Memory Applications [PDF]

Complementary polarized spin-transfer torque magnetic random-access memory (CPSTT-MRAM) has been proposed to address the sensing reliability issues caused by the single-ended sensing of STT-MRAM.
Kon-Woo Kwon, Yeongkyo Seo, Hyerim Kim
core   +1 more source

Comprehensive Device to System Co-Design for SOT-MRAM at the 7 nm Node

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This work presents a comprehensive spin-orbit torque (SOT)-based magnetic random access memory (MRAM) design at the 7 nm technology node, spanning from device-level characteristics to system-level power performance area (PPA).
Piyush Kumar, Da Eun Shim, Azad Naeemi
doaj   +1 more source