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2014 International Test Conference, 2014
Magnetic Random Access Memory (MRAM) is a new technology which offers a viable alternative to other forms of nonvolatile memory, such as flash, where read access time, writing speed, and cell endurance is at a premium. Difficulties in scaling DRAM below the 32nm node may make MRAM a suitable candidate for DRAM replacement.
Raphael Robertazzi +2 more
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Magnetic Random Access Memory (MRAM) is a new technology which offers a viable alternative to other forms of nonvolatile memory, such as flash, where read access time, writing speed, and cell endurance is at a premium. Difficulties in scaling DRAM below the 32nm node may make MRAM a suitable candidate for DRAM replacement.
Raphael Robertazzi +2 more
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Probabilistically Programmed STT-MRAM
IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2012Novel memory programming methods and corresponding memory structures are presented in this paper. Unlike conventional memory programming, this programming technique does not require deterministic switching of memory elements. This technique explicitly exploits the probabilistic switching characteristics of memory elements such as spin-transfer torque ...
Wenqing Wu +4 more
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Records of the IEEE International Workshop on Memory Technology, Design and Testing, 2002
Memories using any type of on-chip magnetic memory elements (often known as MRAM) sometimes suffer from unstable magnetic domains within the memory bits. These states may occur because of improper bit manufacturing techniques or transient magnetic fields generated on or off chip.
Ruili Zhang +2 more
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Memories using any type of on-chip magnetic memory elements (often known as MRAM) sometimes suffer from unstable magnetic domains within the memory bits. These states may occur because of improper bit manufacturing techniques or transient magnetic fields generated on or off chip.
Ruili Zhang +2 more
openaire +1 more source
MRAM Coming to Consumer Products
IEEE Consumer Electronics Magazine, 2021It is argued that emerging memory technologies such as magnetic random access memory (MRAM), RRAM, and phase change memory (such as Intel's Optane) will displace conventional memories for consumer as well as data center applications. Using these nonvolatile memory technologies in consumer devices will enable longer battery life and more capability for ...
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2015 25th International Conference on Field Programmable Logic and Applications (FPL), 2015
In this paper, we describe the use of magnetic RAM (MRAM) in coarse-grained reconfigurable arrays (CGRAs) as a configuration cache to allow for bulk low-energy storage and rapid device reconfiguration. If an energy-saving configuration update for an application is needed, a new configuration can be quickly swapped into compute blocks and interconnect ...
Xiaobin Liu +3 more
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In this paper, we describe the use of magnetic RAM (MRAM) in coarse-grained reconfigurable arrays (CGRAs) as a configuration cache to allow for bulk low-energy storage and rapid device reconfiguration. If an energy-saving configuration update for an application is needed, a new configuration can be quickly swapped into compute blocks and interconnect ...
Xiaobin Liu +3 more
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Design of nonvolatile MRAM bitcell
2017 7th International Symposium on Embedded Computing and System Design (ISED), 2017Although Moore's law has been the most pursued principle since ever; it has become troublesome to apply that on the traditional MOS structures in today's scenario. Striking increment in the subthreshold leakage current, and various other disadvantages like gate-dielectric leakage gate-induced drain leakage (GIDL) are the major factors which limit the ...
Nikita Gupta +3 more
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Electrical Modeling of STT-MRAM Defects
2018 IEEE International Test Conference (ITC), 2018Spin-transfer-torque magnetic RAM (STT-MRAM) is one of the most promising emerging memory technologies. As various manufacturing vendors make significant efforts to push it to the market, appropriate STT-MRAM testing is of great importance. In this paper, we demonstrate that conventional STT-MRAM defect modeling, which is based on linear resistors, is ...
Lizhou Wu +4 more
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Journal of Physics: Condensed Matter, 2007
A thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing; the memory device comprising a tunnel barrier 14 sandwiched between a ferromagnetic sense layer 16 and a ferromagnetic storage layer 12. An antiferromagnetic pinning layer 30 is disposed adjacent to the ferromagnetic storage layer 12.
I L Prejbeanu +6 more
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A thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing; the memory device comprising a tunnel barrier 14 sandwiched between a ferromagnetic sense layer 16 and a ferromagnetic storage layer 12. An antiferromagnetic pinning layer 30 is disposed adjacent to the ferromagnetic storage layer 12.
I L Prejbeanu +6 more
openaire +1 more source
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual., 2005
Prior to our recent publication (J. Akerman et al, IEEE Trans. Dev. Mat. Rel. 4, p.428-435, 2004), little data on magnetoresistive random access memory (MRAM) reliability were available in the literature. In this paper, we present additional reliability data taken in full 4 Mb MRAM arrays, significantly extending the scope of our original study.
J. Akerman +10 more
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Prior to our recent publication (J. Akerman et al, IEEE Trans. Dev. Mat. Rel. 4, p.428-435, 2004), little data on magnetoresistive random access memory (MRAM) reliability were available in the literature. In this paper, we present additional reliability data taken in full 4 Mb MRAM arrays, significantly extending the scope of our original study.
J. Akerman +10 more
openaire +1 more source
2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007
We report on SEL and TID tests of a magnetoresistive random access memory (MRAM). Single event latch-up was observed with a static configuration. Insitu irradiations were used to characterize the response of the total accumulated dose failures.
D. N. Nguyen, F. Irom
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We report on SEL and TID tests of a magnetoresistive random access memory (MRAM). Single event latch-up was observed with a static configuration. Insitu irradiations were used to characterize the response of the total accumulated dose failures.
D. N. Nguyen, F. Irom
openaire +1 more source