Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2002.Includes bibliographical references (p. 45-47).Magnetic Random Access Memory (MRAM) is considered to be the most viable option for nonvolatile memory
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Applied spintronics: From spin transport to spin-charge interconversion and emerging devices. [PDF]
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HeRMES: High-performance reliable MRAM-enabled storage
Magnetic RAM (MRAM) is a new memory technology with access and cost characteristics comparable to those of conventional dynamic RAM (DRAM) and the non-volatility of magnetic media such as disk.
Ethan L. Miller
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All electrical sub-nanosecond field-free switching of perpendicular magnetization with high magnetic field immunity. [PDF]
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Opportunities toward Scalable Domain-Wall-Based Spintronic Devices. [PDF]
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Temperature-Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS-Integrated Spintronic Chips. [PDF]
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Joint Optimization of Codeword Bit Distribution and Detection Threshold for Asymmetric STT-MRAM Channel. [PDF]
Nguyen TA, Lee J.
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Infected intra-abdominal hematoma post-laparoscopic one-anastomosis mini gastric bypass: case report and literature review. [PDF]
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A generic compact model for resistive memories and switches. [PDF]
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