Results 121 to 130 of about 5,091 (240)

Energy-Aware Physical Unclonable Functions: From Physical Entropy Sources to MRAM-Based Low-Power Hardware Roots of Trust

open access: yesJournal of Low Power Electronics and Applications
Physical unclonable functions (PUFs) convert device-specific physical variations into responses for chip identity, key reconstruction, secure boot, and hardware roots of trust.
Jian Yang, Yanfeng Jiang
doaj   +1 more source

Secure Charactrization of Magnetic Memories MRAM

open access: yes, 2015
La MRAM est une technologie de mémoire non-volatile émergente, elle a la particularité de stocker les données sous forme d’orientations de moments magnétiques.
Sarno, Thomas
core  

Automotive embedded systems software reprogramming [PDF]

open access: yes, 2012
This thesis was submitted for the degree of Doctor of Philosophy and was awarded by Brunel UniversityThe exponential growth of computer power is no longer limited to stand alone computing systems but applies to all areas of commercial embedded computing ...
Schmidgall, Ralf
core   +1 more source

Atomistic simulations of perpendicular shape anisotropy MRAM [PDF]

open access: yes
The continuous growth in demand for high performance computing necessitates that future random access memory (RAM) demonstrate low power consumption without sacrificing performance or reliability.
Lack, Wayne
core   +2 more sources

An analysis of MRAM based memory technologies [PDF]

open access: yes, 2006
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.Includes bibliographical references (leaves 66-68).MRAM is a memory (RAM) technology that uses electron spin to store information. Often been called
Vijayaraghavan, Rangarajan, M. Eng. Massachusetts Institute of Technology
core  

Test algorithm and bist design for mram write disturbance fault

open access: yes, 2012
[[abstract]]The write disturbance fault (WDF) model is a fault model specific to MRAM which implies that the data stored in the MRAM cells is changed due to excessive magnetic field during a Write operation.
Chen, Ching-Yi;Lo, Wan-Yu;Su, Chin-Lung;Wu, Cheng-Wen
core  

A Novel Self-Reference Sensing Scheme for MLC MRAM [PDF]

open access: yes, 2017
Magnetic random access memory (MRAM) is a promising nonvolatile memory technology targeted on on-chip or embedded applications. Storage density is one of the major design concerns of MRAM.
Li, Zheng
core  

Wafer-scale SOT-MRAM for analog crossbar array applications. [PDF]

open access: yesSci Adv
Liu S   +5 more
europepmc   +1 more source

Applied spintronics: From spin transport to spin-charge interconversion and emerging devices. [PDF]

open access: yesSci Adv
Bibes M   +6 more
europepmc   +1 more source

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