Results 121 to 130 of about 5,091 (240)
Physical unclonable functions (PUFs) convert device-specific physical variations into responses for chip identity, key reconstruction, secure boot, and hardware roots of trust.
Jian Yang, Yanfeng Jiang
doaj +1 more source
Secure Charactrization of Magnetic Memories MRAM
La MRAM est une technologie de mémoire non-volatile émergente, elle a la particularité de stocker les données sous forme d’orientations de moments magnétiques.
Sarno, Thomas
core
Automotive embedded systems software reprogramming [PDF]
This thesis was submitted for the degree of Doctor of Philosophy and was awarded by Brunel UniversityThe exponential growth of computer power is no longer limited to stand alone computing systems but applies to all areas of commercial embedded computing ...
Schmidgall, Ralf
core +1 more source
Atomistic simulations of perpendicular shape anisotropy MRAM [PDF]
The continuous growth in demand for high performance computing necessitates that future random access memory (RAM) demonstrate low power consumption without sacrificing performance or reliability.
Lack, Wayne
core +2 more sources
An analysis of MRAM based memory technologies [PDF]
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.Includes bibliographical references (leaves 66-68).MRAM is a memory (RAM) technology that uses electron spin to store information. Often been called
Vijayaraghavan, Rangarajan, M. Eng. Massachusetts Institute of Technology
core
Test algorithm and bist design for mram write disturbance fault
[[abstract]]The write disturbance fault (WDF) model is a fault model specific to MRAM which implies that the data stored in the MRAM cells is changed due to excessive magnetic field during a Write operation.
Chen, Ching-Yi;Lo, Wan-Yu;Su, Chin-Lung;Wu, Cheng-Wen
core
A Novel Self-Reference Sensing Scheme for MLC MRAM [PDF]
Magnetic random access memory (MRAM) is a promising nonvolatile memory technology targeted on on-chip or embedded applications. Storage density is one of the major design concerns of MRAM.
Li, Zheng
core
Wafer-scale SOT-MRAM for analog crossbar array applications. [PDF]
Liu S +5 more
europepmc +1 more source
Applied spintronics: From spin transport to spin-charge interconversion and emerging devices. [PDF]
Bibes M +6 more
europepmc +1 more source
Temperature-Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS-Integrated Spintronic Chips. [PDF]
Wang M +7 more
europepmc +1 more source

