Results 121 to 130 of about 1,191 (183)
First principles investigation of the ferromagnetism in TM-doped arsenene monolayer (TM = Mn and Fe). [PDF]
Nanoscale AdvTan PM +5 more
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Understanding the Magnetic Exchange Pathways of Transition-Metal-Doped Monolayer TiS<sub>2</sub> Using First-Principles Calculations. [PDF]
Nanomaterials (Basel)Keeney PJ, Coelho PM, Haraldsen JT.
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Advanced Modeling and Simulation of Multilayer Spin-Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling. [PDF]
Micromachines (Basel)Bendra M +4 more
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Fast barrier-free switching in synthetic antiferromagnets. [PDF]
Sci RepDzhezherya Y +6 more
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R-MRAM: A ROM-Embedded STT MRAM Cache
IEEE Electron Device Letters, 2013We present a new spin-transfer torque magnetic random access memory (STT MRAM) bit-cell that is embedded with read-only memory (ROM) functionality. The proposed ROM-embedded STT MRAM (R-MRAM) bit-cells include one extra bit-line. ROM data is stored by selectively connecting the magnetic tunnel junction (MTJ) to one of the two bit-lines.
Dongsoo Lee +2 more
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Recent Progresses in STT-MRAM and SOT-MRAM for Next Generation MRAM
2020 IEEE Symposium on VLSI Technology, 2020In last decade, since high performance MTJ using CoFeB/MgO-based interfacial perpendicular magnetic anisotropy (IPMA) is utilized, STT-MRAM technology has rapidly progressed and mass-production of STT-MRAM has already started in the semiconductor companies.
Tetsuo Endoh +3 more
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IEEE Transactions on Circuits and Systems II: Express Briefs, 2021
This brief presents a review of developments in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) sensing over the past 20 years from a circuit design perspective. Various sensing schemes are categorized and described according to the data-cell variation-tolerant characteristics, pre-amplifiers, and offset tolerance.
Taehui Na +2 more
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This brief presents a review of developments in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) sensing over the past 20 years from a circuit design perspective. Various sensing schemes are categorized and described according to the data-cell variation-tolerant characteristics, pre-amplifiers, and offset tolerance.
Taehui Na +2 more
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ACM Journal on Emerging Technologies in Computing Systems, 2016
In this work, we have studied two novel techniques to enhance the performance of existing geometry-based magnetoresistive RAM physically unclonable function (MRAM PUF). Geometry-based MRAM PUFs rely only on geometric variations in MRAM cells that generate preferred ground state in cells and form the basis of digital signature generation.
Jayita Das, Kevin Scott, Sanjukta Bhanja
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In this work, we have studied two novel techniques to enhance the performance of existing geometry-based magnetoresistive RAM physically unclonable function (MRAM PUF). Geometry-based MRAM PUFs rely only on geometric variations in MRAM cells that generate preferred ground state in cells and form the basis of digital signature generation.
Jayita Das, Kevin Scott, Sanjukta Bhanja
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Design considerations for MRAM
IBM Journal of Research and Development, 2006MRAM (magnetic random access memory) technology, based on the use of magnetic tunnel junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance. This paper is an overview of MRAM design considerations.
Thomas M. Maffitt +8 more
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