Results 81 to 90 of about 5,284 (228)
Two‐Dimensional van der Waals Antiferromagnets: Fabrication, Probes, Control, and Applications
Advanced Physics Research, EarlyView.Two‐dimensional van der Waals antiferromagnets are emerging as versatile platforms for spintronic, optoelectronic, and quantum devices. This review summarizes recent progress in their fabrication, magnetic characterization, fields, interfacial engineering, chemical modification, and representative applications.
Huangyu Wu +10 more
wiley +1 more source
MRAM - Preliminary Analysis for File System Design
, 2002 Recent improvements in nonvolatile memory technology show a promise for the replacement of currently used DRAM. Magnetic memory (MRAM) with its low access times and comparable cost per byte to DRAM is a good candidate.
Alicja Beata Szczurowska
core
High Density Asynchronous LUT Based on Non-volatile MRAM Technology
, 2010 International audienceIn this article, we present the architecture design of high-performance Asynchronous Look Up Table (LUT) embedded with a non-volatile Magnetic RAM (MRAM) as the configuration memory, called MALUT.
Claude Chappert +9 more
core +1 more source
APL MaterialsCurrent-induced magnetization switching through spin–orbit torque (SOT) enables low-energy and high-speed switching of magnetic memory (MRAM), positioning SOT-MRAM as a promising candidate for next-generation memory technology.
Ji-won Yoon +5 more
doaj +1 more source
Chemistry – A European Journal, EarlyView.Understanding aromaticity has evolved from benzene‐centric concepts to a broad multidimensional framework spanning organic, inorganic, and excited‐state systems. This review highlights ambiguities between magnetic, electronic, geometric, and energetic descriptors, emphasizing the need for unified, multi‐criteria approaches.
Sílvia Escayola +2 more
wiley +1 more source
Enabling high-performance LPDDRx-compatible MRAM
, 2014 DRAM consumes a significant amount of energy in mobile computing devices today. Emerging non-volatile memory such as magnetoresistive memory (MRAM) offers a DRAM alternative and can potentially lead to a more energy-efficient memory system.
Xiangyu Dong +5 more
core +1 more source
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
Recent progress of the exchange bias based on 2D van der Waals ferromagnet
InfoScience, EarlyView.Ultrathin magnetic materials could help make smaller, energy‐efficient memories, but their magnetic states must remain stable and controllable. This review brings together recent research on exchange bias, a magnetic pinning effect in layered materials, and explains how interfaces and electrical, thermal or mechanical controls can tune it, with optical
Wajahat Ali, Shaojie Hu
wiley +1 more source
Diagnosis of MRAM write disturbance fault
, 2010 [[abstract]]In this paper, we propose a new test method to detect write disturbance fault (WDF) for magnetic RAM (MRAM). Furthermore, an adaptive diagnosis algorithm (ADA) is also introduced to identify and diagnose the WDF for MRAM.
C.-L. Su;C.-W. Tsai;C.-Y. Chen;W.-Y. Lo;C.-W. Wu;J.-J. Chen;W.-C. Wu;C.-C. Hung;M.-J. Kao +9 more
core +1 more source
Spin‐Polarized Magnetic Metal Electrodes for Magnetic Tunnel Junctions
MetalMat, EarlyView.This perspective surveys spin‐polarized magnetic metal electrodes for magnetic tunnel junctions, systematically covering conventional ferromagnets, collinear/noncollinear antiferromagnets, and emergent altermagnets. It compares tunneling polarization origins across these classes and emphasizes that effective electrode polarization is a momentum ...
Zhiyuan Duan +9 more
wiley +1 more source