Results 81 to 90 of about 5,091 (240)

Testing STT-MRAM: Manufacturing Defects, Fault Models, and Test Solutions

, 2021
As STT-MRAM mass production and deployment in industry is around the corner, high-quality yet cost-efficient manufacturing test solutions are crucial to ensure the required quality of products being shipped to end customers.
Wu, L. (author)
core   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

Real-time switching dynamics in STT-MRAM

, 2022
International audienceIn this paper a new experimental technique for measuring the switching dynamics and extracting the energy consumption of Spin Transfer Torque MRAM (STT-MRAM) device is presented.
Postel-Pellerin, J, Yazigy, N, Canet, P, Di Pendina, Gregory, Terziyan, K, Sousa, R, C, Marca, V, Della   +6 more
core   +1 more source

Energy efficiency analysis of spin–orbit torque MRAM using composition dependent resistivity and spin Hall angle in Pt/W multilayer structure

APL Materials
Current-induced magnetization switching through spin–orbit torque (SOT) enables low-energy and high-speed switching of magnetic memory (MRAM), positioning SOT-MRAM as a promising candidate for next-generation memory technology.
Ji-won Yoon, Hyun-jun Lee, Ji-Hyeon Yun, Si-yeol Lee, Sang Ho Lim, Seung-heon Chris Baek   +5 more
doaj   +1 more source

Two‐Dimensional van der Waals Antiferromagnets: Fabrication, Probes, Control, and Applications

Advanced Physics Research, EarlyView.
Two‐dimensional van der Waals antiferromagnets are emerging as versatile platforms for spintronic, optoelectronic, and quantum devices. This review summarizes recent progress in their fabrication, magnetic characterization, fields, interfacial engineering, chemical modification, and representative applications.
Huangyu Wu, Zeyu Han, Yueyao Wang, Yitao Yu, Mingyang Yin, Yikang Jin, Yongjun Huo, Lihong Gao, Zhuang Ma, Gang Zhang, Miao Jiang   +10 more
wiley   +1 more source

Exploring the Boundaries of Aromaticity in Complex Structures and Excited States Through Computational Analysis

Chemistry – A European Journal, EarlyView.
Understanding aromaticity has evolved from benzene‐centric concepts to a broad multidimensional framework spanning organic, inorganic, and excited‐state systems. This review highlights ambiguities between magnetic, electronic, geometric, and energetic descriptors, emphasizing the need for unified, multi‐criteria approaches.
Sílvia Escayola, Miquel Solà, Albert Poater   +2 more
wiley   +1 more source

Deterministic Precessional MRAM With Low Write Error Rate: Fokker-Planck Modeling and Design Optimization

IEEE Journal of the Electron Devices Society
Magnetoresistive memory has matured into a commercially viable technology, with current-controlled spin-transfer torque (STT) MRAM serving as an industry standard for spintronics due to its good performance metrics and compatibility with silicon ...
Stanislav Sin, Saeroonter Oh
doaj   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Spin‐Polarized Magnetic Metal Electrodes for Magnetic Tunnel Junctions

MetalMat, EarlyView.
This perspective surveys spin‐polarized magnetic metal electrodes for magnetic tunnel junctions, systematically covering conventional ferromagnets, collinear/noncollinear antiferromagnets, and emergent altermagnets. It compares tunneling polarization origins across these classes and emphasizes that effective electrode polarization is a momentum ...
Zhiyuan Duan, Peixin Qin, Li Liu, Guojian Zhao, Sixu Jiang, Xiaoyang Tan, Jingyu Li, Xiaoning Wang, Ziang Meng, Zhiqi Liu   +9 more
wiley   +1 more source

Altermagnetismus und neue Chancen für die Spintronik: Das Beste aus zwei Welten

Physik in unserer Zeit, EarlyView.
Sie gelten als die Zukunft der Spintronik: Altermagnete kombinieren die Vorzüge von Ferro‐ und Antiferromagneten, was lange Zeit als physikalisch unvereinbar galt. Der Grund für dieses Potential liegt in ihrer spezifischen Symmetrie. Zusammenfassung Klassisch werden magnetische Materialien in Ferromagnete (parallele Spins) und Antiferromagnete ...
Sonka Reimers, Martin Jourdan, Mathias Kläui   +2 more
wiley   +1 more source