Results 81 to 90 of about 4,033 (229)
MRAM: A Versatile Non-Volatile Memory for Next-Generation Computing
NanomaterialsMagnetoresistive random-access memory (MRAM), as a promising non-volatile memory technology, has attracted extensive research interest owing to its unique combination of high operating speed, exceptional endurance, low standby power consumption, and CMOS
Zhihan Wang, Haiwen Li, Sheng Jiang
doaj +1 more source
Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials
Advanced Electronic Materials, EarlyView.RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki +3 more
wiley +1 more source
Giant Exfoliation Induced Magnetic Coercivity in Fe3GaTe2
Advanced Electronic Materials, EarlyView.Mechanical exfoliation is shown to transform the van der Waals ferromagnet Fe3GaTe2 from a soft into a hard magnetic system. Reducing thickness drives a crossover to single‐domain behavior, dramatically enhancing in‐plane coercivity to near–permanent‐magnet levels at room temperature.
Lingrui Mei +8 more
wiley +1 more source
Caractérisation sécuritaire des mémoires magnétiques MRAM [PDF]
, 2015 MRAM (magnetoresistive RAM) is an emergent non-volatile memory technology; it has the particularity to store data in magnetic moments orientations. It has very interesting characteristics that overwhelm mature technologies on several points.
Sarno, Thomas
core
Integration technologies for scalable high density MRAM [PDF]
, 2005 We investigate the key factors for scalable high density MRAM. Specifically we examine problems such as large switching field, small sensing margin and writing disturbance following a decrease in size.
Lee, S. Y. +15 more
core +1 more source
Spintronics and magnetic memory devices
Advances in Physics: XSpintronics technology enables electrical reading and writing of magnetization orders, thus have led to development of magnetic random access memory (MRAM).
Gyung-Min Choi +6 more
doaj +1 more source
Advanced Intelligent Discovery, EarlyView.Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj +2 more
wiley +1 more source
MRAM - Preliminary Analysis for File System Design [PDF]
, 2002 Recent improvements in nonvolatile memory technology show a promise for the replacement of currently used DRAM. Magnetic memory (MRAM) with its low access times and comparable cost per byte to DRAM is a good candidate.
Alicja Beata Szczurowska
core
Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation
Advanced Intelligent Systems, EarlyView.Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison +4 more
wiley +1 more source
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source