Results 31 to 40 of about 5,284 (228)
Embedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory
Journal of Low Power Electronics and Applications, 2014 Static random access memory (SRAM) is the most commonly employed semiconductor in the design of on-chip processor memory. However, it is unlikely that the SRAM technology will have a cell size that will continue to scale below 45 nm, due to the leakage ...
Luís Vitório Cargnini +4 more
doaj +1 more source
Evaluation of embedded STT-MRAM for Ultra Low Power applications
, 2019 National audienceThe complexity of embedded devices increases as today's applications request always more services. However, the power consumption of SoC has significantly increased due to the high-density integration and the high leakage power of ...
Patrigeon, Guillaume +2 more
core +3 more sources
IEEE Access, 2019 Thanks to its superior features of non-volatility, fast read/write speed, high endurance, and low power consumption, spin-torque transfer magnetic random access memory (STT-MRAM) has become a promising candidate for the next generation non-volatile ...
Zhong Xingwei +3 more
doaj +1 more source
On the Design of 7/9-Rate Sparse Code for Spin-Torque Transfer Magnetic Random Access Memory
IEEE Access, 2021 A design of 7/9-rate sparse code for spin-torque transfer magnetic random access memory (STT-MRAM) is proposed in this work. The STT-MRAM using spin-polarized current through magnetic tunnel junction (MTJ) to write data is one of the most promising ...
Chi Dinh Nguyen
doaj +1 more source
Neural network detector with sparse codes for spin transfer torque magnetic random access memory
Cogent Engineering, 2023 This paper presents leveraging the neural network detector to improve the performance of a spin transfer torque magnetic random-access memory (STT-MRAM), where the sparse coding scheme is also applied to protect the user data for the asymmetric write ...
Chi Dinh Nguyen
doaj +1 more source
Magneto‐Ionic Devices With Polymer‐Based Electrolytes
Advanced Functional Materials, EarlyView.Polymer electrolytes are introduced for magneto‐ionic devices based on hydroxide and hydrogen ions. The magneto‐ionic effect results in a pronounced voltage‐controlled variation of coercivity in both devices. The switching speed is in the range of 100 ms.
Markus Gößler +3 more
wiley +1 more source
Hardware Implementation of a Fully Functional Stochastic p‐STT Neuron for Probabilistic Computing
Advanced Electronic MaterialsA stochastic binary neuron is developed for probabilistic computing using a perpendicular spin‐transfer torque (p‐STT) neuron device and its associated peripheral circuits.
Han‐Sol Jun +7 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Further advances in applications can be anticipated through the development of unique and functional materials beyond conventional alloys. Nitrogen enables tailor‐made orbital textures in various transition‐metal hosts, paving the way for devices ranging from spintronics memory to artificial intelligence hardware.
Prabhat Kumar +3 more
wiley +1 more source
Efficient Magnetization Switching Driven by Orbital Torque in Light 3d Transition‐Metal Nitrides
Advanced Functional Materials, EarlyView.Efficient magnetization switching is demonstrated through orbital torque generated from light 3d transition‐metal nitride. Transition‐metal nitrides are established as effective sources of orbital angular momentum for current‐induced switching, highlighting their potential for low‐power next‐generation orbitronic devices beyond conventional heavy‐metal‐
Gaurav K. Shukla +3 more
wiley +1 more source
Advanced Materials, EarlyView.Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam +6 more
wiley +1 more source