Results 31 to 40 of about 5,091 (240)
IEEE Access, 2019 Thanks to its superior features of non-volatility, fast read/write speed, high endurance, and low power consumption, spin-torque transfer magnetic random access memory (STT-MRAM) has become a promising candidate for the next generation non-volatile ...
Zhong Xingwei +3 more
doaj +1 more source
Embedded systems to high performance computing using STT-MRAM
, 2017 International audienceThe scaling limits of CMOS have pushed many researchers to explore alternative technologies for beyond CMOS circuits. In addition to the increased device variability and process complexity led by the continuous decreasing size of ...
Coi, Odilia +15 more
core +1 more source
On the Design of 7/9-Rate Sparse Code for Spin-Torque Transfer Magnetic Random Access Memory
IEEE Access, 2021 A design of 7/9-rate sparse code for spin-torque transfer magnetic random access memory (STT-MRAM) is proposed in this work. The STT-MRAM using spin-polarized current through magnetic tunnel junction (MTJ) to write data is one of the most promising ...
Chi Dinh Nguyen
doaj +1 more source
Neural network detector with sparse codes for spin transfer torque magnetic random access memory
Cogent Engineering, 2023 This paper presents leveraging the neural network detector to improve the performance of a spin transfer torque magnetic random-access memory (STT-MRAM), where the sparse coding scheme is also applied to protect the user data for the asymmetric write ...
Chi Dinh Nguyen
doaj +1 more source
Advanced Functional Materials, EarlyView.The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan +4 more
wiley +1 more source
Hardware Implementation of a Fully Functional Stochastic p‐STT Neuron for Probabilistic Computing
Advanced Electronic MaterialsA stochastic binary neuron is developed for probabilistic computing using a perpendicular spin‐transfer torque (p‐STT) neuron device and its associated peripheral circuits.
Han‐Sol Jun +7 more
doaj +1 more source
Advanced Materials, EarlyView.Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam +6 more
wiley +1 more source
A novel SRAM -STT-MRAM hybrid cache implementation improving cache performance
, 2017 International audienceMemories are currently a real bottleneck to design high speed and energy-efficient systems-on-chip. A significant increase of the performance gap between processors and memories is observed.
Coi, Odilia +9 more
core +1 more source
Advanced Materials, EarlyView.ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Mohammad H. Badarneh +2 more
wiley +1 more source
A Comparative Analysis on the Impact of Bank Contention in STT-MRAM and SRAM Based LLCs
, 2019 Spin Transfer Torque Magnetic RAM (STT-MRAM) is being extensively considered as a promising replacement for Last Level Caches (LLC), due to its high density, low leakage and non-volatility. However, writes to STT-MRAM are energy intensive and have a high
Christian Tenllado +19 more
core +1 more source