Results 11 to 20 of about 5,284 (228)

Hardware Acceleration of Stochastic Neural Networks Enabled by Bit‐Cell Level Co‐Design of Magnetic Tunnel Junctions [PDF]

Advanced Science, EarlyView.
An MTJ‐based probabilistic processing‐in‐memory architecture unites nonvolatile storage, local entropy generation, and stochastic computation within each memory cell. Stored multi‐bit weights are converted directly into programmable stochastic bitstreams, enabling neural‐network inference, adaptive Ising optimization, and uncertainty‐aware Bayesian ...
Qiuyuan Wang, Dooyong Koh, Brooke McGoldrick, Tudor Mocioi, Yabin Fan, Marc Baldo, Luqiao Liu   +6 more
wiley   +2 more sources

Magnetoelectric Multiferroics for the Next‐Generation Ultralow‐Power Electronics [PDF]

Advanced Science, EarlyView.
Magnetoelectric coupling provides a unifying route from electric‐field control of magnetic order to non‐volatile MeRAM, MESO logic, and emerging antiferromagnetic and magnonic devices. By connecting switching physics with device benchmarks, material platforms, and integration strategies, distinctive technological opportunities are identified alongside ...
Yang Liu, Yunlong Sun, Hao Luo, Duoduo Zhao, Yuhan Zeng, Xuzihan Zhang, Zhewei Liu, Hao Peng, Zhijing Zhang, Jack Yang, Ji Zhang, Danyang Wang, Junjie Shi, Sean Li   +13 more
wiley   +2 more sources

MRAM: A Versatile Non-Volatile Memory for Next-Generation Computing [PDF]

Nanomaterials
Magnetoresistive random-access memory (MRAM), as a promising non-volatile memory technology, has attracted extensive research interest owing to its unique combination of high operating speed, exceptional endurance, low standby power consumption, and CMOS
Zhihan Wang, Haiwen Li, Sheng Jiang
doaj   +2 more sources

Research on Open Magnetic Shielding Packaging for STT and SOT-MRAM [PDF]

Micromachines
As an emerging type of non-volatile memory, magneto-resistive random access memory (MRAM) stands out for its exceptional reliability and rapid read–write speeds, thereby garnering considerable attention within the industry.
Haibo Ye, Xiaofei Zhang, Nannan Lu, Jiawei Li, Jun Jia, Guilin Zhao, Jiejie Sun, Lei Zhang, Chao Wang   +8 more
doaj   +2 more sources

TPCSA-MRAM: Ternary Precharge Sense Amplifier-Based MRAM

IEEE Access
The emerging multi-value logic technology in memory systems has increased data storage capacity and power efficiency. In this paper, to address the power consumption challenge of ternary memory, a ternary precharge sense amplifier (TPCSA)-based magnetic ...
Mohammad Mahdi Mazaheri, Abdolah Amirany, Mohammad Hossein Moaiyeri   +2 more
doaj   +3 more sources

A scalable neural network emulator with MRAM-based mixed-signal circuits [PDF]

Frontiers in Neuroscience
In this study, we present a mixed-signal framework that utilizes MRAM (Magneto-resistive Random Access Memory) technology to emulate behaviors observed in biological neural networks on silicon substrates.
Jua Lee, Jua Lee, Jiho Song, Hyeon Seong Im, Jonghwi Kim, Woonjae Lee, Wooseok Yi, Soonwan Kwon, Byungsu Jung, Joohyoung Kim, Yoonmyung Lee, Jung-Hoon Chun   +11 more
doaj   +2 more sources

MODELING OF MTJ AND ITS VALIDATION USING NANOSCALE MRAM BITCELL [PDF]

Journal of Engineering Science and Technology, 2017
Magnetic Tunnel Junction (MTJ) is a promising candidate for nonvolatile and low power memory design. MTJ is basic building block of STT-MRAM bitcell.
CHANDRAMAULESHWAR ROY, ARUNDHATI BHATTACHARYA, A. ISLAM   +2 more
doaj   +2 more sources

Security Evaluation of a Hybrid CMOS/MRAM Ascon Hardware Implementation

, 2023
International audienceAs the number of IoT objects is growing fast, power consumption and security become a major concern in the design of integrated circuits.
Dutertre, Jean-Max, Potin, Olivier, Rigaud, Jean-Baptiste, Roussel, Nathan   +3 more
core   +1 more source

DSH-MRAM: Differential Spin Hall MRAM for On-Chip Memories [PDF]

IEEE Electron Device Letters, 2013
A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and energy-efficient write operation.
Kim, Yusung, Choday, Sri Harsha, Roy, Kaushik   +2 more
openaire   +2 more sources

Multi-Port 1R1W Transpose Magnetic Random Access Memory by Hierarchical Bit-Line Switching

IEEE Access, 2019
Emerging Magnetic Random-Access Memory (MRAM) has shown a great potential to replace Static-RAM (SRAM) and Dynamic-RAM (DRAM) in the working memories including Cache and main memory. MRAM benefits from its high-density, fast speed, low standby power, and
Liang Chang, Zhaohao Wang, Youguang Zhang, Weisheng Zhao   +3 more
doaj   +1 more source