Results 121 to 130 of about 20,887 (309)

Interlayer‐Sliding‐Enabled Multiferroicity and Giant Switchable Anomalous Hall Conductivity in RuO2Zn2F2 Bilayer

Advanced Science, EarlyView.
Interlayer sliding in the RuO2Zn2F2 bilayer induces ferroelectricity and enables reversible valley polarization switching. The electric dipole and valley‐resolved band edges are intimately coupled, revealing sliding ferroelectricity as a powerful mechanism for electrical control of valley degrees of freedom in 2D materials.
Djamel Bezzerga, Imran Khan, Ganie Suhail Ahmad, Jisang Hong   +3 more
wiley   +1 more source

Nonvolatile magneto-thermal switching driven by vortex trapping in commercial In-Sn solder

Applied Physics Express
Magneto-thermal switching (MTS) is a key technology for efficient thermal management. Recently, large MTS with nonvolatility has been observed in Sn-Pb solders [H. Arima et al. Commun. Mater.
Poonam Rani, Takumi Murakami, Yuto Watanabe, Hossein Sepehri-Amin, Hiroto Arima, Aichi Yamashita, Yoshikazu Mizuguchi   +6 more
doaj   +1 more source

Balanced Modulation for Nonvolatile Memories [PDF]

, 2012
This paper presents a practical writing/reading scheme in nonvolatile memories, called balanced modulation, for minimizing the asymmetric component of errors. The main idea is to encode data using a balanced error-correcting code.
Bruck, Jehoshua, Jiang, Anxiao (Andrew), Zhou, Hongchao   +2 more
core  

Nonvolatile dynamic memories

, 2004
This paper demonstrates that electronically passivated Si-Si02 interface enables the development of nonvolatilc dynamic memories. Experimental results on chargeretention iimes are presented to illustrate that the Si DRAMs would become nonvolatile ...
Dimitrijev, Sima, Dimitrijev, S
core   +1 more source

WS2 Optoelectronic Memristive Reservoir Enabling Ultra‐Low‐Power, Multi‐Task, and Environmentally Stable Neuromorphic Computing

Advanced Science, EarlyView.
WS2‐based in‐memory sensing reservoir computing integrates sensing, memory, and computation in one compact device. It achieves ∼94% N‐MNIST, ∼93% eye motion perception, and ∼89% speech recognition with ultra‐low energy (∼25.5 fJ/spike). The system shows stability at 95% humidity, endurance over 1.5M cycles, and supports synaptic plasticity, enabling ...
Dayanand Kumar, Hanrui Li, Divyanshu Divyanshu, Dhananjay D. Kumbhar, Manoj Kumar Rajbhar, Amit Singh, Abdul Momin Syed, Selma Amara, Gianluca Setti, Nazek El‐Atab   +9 more
wiley   +1 more source

Enhancing Li‐S Battery Performance Through Low‐Concentration Electrolytes with Organic Se/Te Co‐Additives to Address Solubility and Kinetic Challenges

Advanced Science, EarlyView.
This work presents a low‐concentration electrolyte enabled by hybrid organic Se/Te additives (DPDSe/DPDTe) that restructures solvation, boosts polysulfide dissolution, and provides dual‐site synergistic catalysis, delivering high capacity and stable cycling in Li–S coin and pouch cells, supporting high‐energy, high‐power operation.
Ruihua Li, Haiwei Wu, Hairu Wei, Wenhao Jia, Frederik Bettels, Leon Schenk, Zhihua Lin, Hanbin Liu, Guodong Liu, Zhijian Li, Lin Zhang   +10 more
wiley   +1 more source

Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization

, 2019
Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent ...
Zhao, Yuelei, Zhang, Xixiang, Yan, Shishen, Tian, Yufeng, Zhang, Qiang, Bai, Lihui, Cai, Jianwang, Chen, Yanxue, Kang, Shishou, Zhong, Hai, Huang, Qikun, Wen, Yan, Li, Run-Wei   +12 more
core   +1 more source

Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing

Advanced Science, EarlyView.
A triple‐mode ferroelectric thin‐film transistor is developed by integrating Si3N4/HZO/IGZO layers to realize three independent memory modes: electric long‐term, electric short‐term, and optical short‐term. This single‐device architecture functions as both a reservoir and readout layer, achieving 92.43% MNIST accuracy. It offers a fully hardware‐based,
Hyeonho Lee, Seungjun Lee, Tae‐Hyeon Kim, Yonghee Jeong, Gwangmin An, Minsu Ko, Junsu Yu, Heung Soo Kim, Yang Chai, Sungjun Kim   +9 more
wiley   +1 more source

Reconfigurable and nonvolatile ferroelectric bulk photovoltaics based on 3R-WS2 for machine vision

Nature Communications
Hardware implementation of reconfigurable and nonvolatile photoresponsivity is essential for advancing in-sensor computing for machine vision applications.
Yue Gong, Ruihuan Duan, Yi Hu, Yao Wu, Song Zhu, Xingli Wang, Qijie Wang, Shu Ping Lau, Zheng Liu, Beng Kang Tay   +9 more
doaj   +1 more source

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

Advanced Science, 2017
Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐
Wen Li, Fengning Guo, Haifeng Ling, Peng Zhang, Mingdong Yi, Laiyuan Wang, Dequn Wu, Linghai Xie, Wei Huang   +8 more
doaj   +1 more source