Results 121 to 130 of about 23,546 (257)

Two‐Dimensional Triferroics: From Fundamental Couplings to Multifunctional Applications

Advanced Science, EarlyView.
This graphic summarizes the three main types of currently reported 2D triferroic couplings. From the structural perspective, existing systems can be broadly classified into two categories, which exhibit distinct symmetry features and coupling behaviors. Beyond the lattice difference, a third type involves the interplay among ferroelectricity, magnetism,
Yang Li, Jialin Gong, Zhiqing Li
wiley   +1 more source

On-chip graphene photodetectors with a nonvolatile p–i–n homojunction

Light: Science & Applications
Graphene’s unique photothermoelectric (PTE) effect, combined with its compatibility for on-chip fabrication, promises its development in chip-integrated photodetectors with ultralow dark-current and ultrafast speed.
Ruijuan Tian, Yong Zhang, Yingke Ji, Chen Li, Xianghu Wu, Jianguo Wang, Shuaiwei Jia, Liang Liu, Mingwen Zhang, Yu Zhang, Qiao Zhang, Zhuang Xie, Zhengdong Luo, Duorui Gao, Yan Liu, Jianlin Zhao, Zhipei Sun, Xuetao Gan   +17 more
doaj   +1 more source

Superatom Distortion Induces Triferroicity and Spin Splitting in Two‐Dimensional Antiferromagnets

Advanced Science, EarlyView.
The incorporation of superatoms into a 2D square lattice induces symmetry breaking, thereby enabling concurrent coupling among magnetism, ferroelectricity, and ferroelasticity. This strategy achieves triferroic behavior—characterized by spin‐split antiferromagnetic ground states—and offers a viable pathway toward energy‐efficient spintronic devices ...
Zhen Gao, Fengxian Ma, Guoping Gao, Weizhen Meng, Ying Liu, Yandong Ma, Yalong Jiao   +6 more
wiley   +1 more source

Nonvolatile storage in photorefractive crystals [PDF]

, 1994
We propose and demonstrate a nonvolatile holographic recording system for storing two-dimensional images. The readout light in this system is not absorbed by the holographic medium, and the data are preformatted or postformatted so that lines from ...
Mok, Fai, Psaltis, Demetri, Li, Hsin-Yu Sidney   +2 more
core  

Imprint Control of Nonvolatile Shape Memory with Asymmetric Ferroelectric Multilayers

, 2016
Imprint Control of Nonvolatile Shape Memory with Asymmetric Ferroelectric ...
Young-Han Shin (1700146), Jong Yeog Son (1700149), Woo-Hee Kim (1700152), Hyun Myung Jang (1487470)   +3 more
core   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization

, 2019
Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent ...
Zhao, Yuelei, Zhang, Xixiang, Yan, Shishen, Tian, Yufeng, Zhang, Qiang, Bai, Lihui, Cai, Jianwang, Chen, Yanxue, Kang, Shishou, Zhong, Hai, Huang, Qikun, Wen, Yan, Li, Run-Wei   +12 more
core   +1 more source

Interlayer‐Sliding‐Enabled Multiferroicity and Giant Switchable Anomalous Hall Conductivity in RuO2Zn2F2 Bilayer

Advanced Science, EarlyView.
Interlayer sliding in the RuO2Zn2F2 bilayer induces ferroelectricity and enables reversible valley polarization switching. The electric dipole and valley‐resolved band edges are intimately coupled, revealing sliding ferroelectricity as a powerful mechanism for electrical control of valley degrees of freedom in 2D materials.
Djamel Bezzerga, Imran Khan, Ganie Suhail Ahmad, Jisang Hong   +3 more
wiley   +1 more source

Full integration and cell characteristics for 64Mb nonvolatile PRAM

, 2004
We have integrated a 64Mb nonvolatile random access memory using phase transition phenomena. Based on 0.18um-CMOS technologies, the vertical contact typed memory cell is fabricated.
Kinam Kim, H.C. Koo, Ryoo, K.C., G.T. Jeong, Jeong, Changwook, C.W. Jeong, Y.-T. Kim, S.Y. Lee, Lee, S.Y., Koo, H.C., Kim, Y.-T., Kim, K., K.C. Ryoo, Koh, G.H., Y.N. Hwang, G.H. Koh, S.H. Lee, S.J. Ahn, Lee, S.H., Hwang, Y.N., Ahn, S.J., Jeong, H.S., H.S. Jeong, Jeong, G.T.   +23 more
core   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source