Results 141 to 150 of about 20,887 (309)

Polyheteroarylene films with intrinsic switching mechanism for nonvolatile memory applications

, 2008
This paper presents a polymer material for the nonvolatile memory applications. Current-voltage characteristics show the reproducible nonvolatile switching effect. The effect is observed not only when using two metallic electrodes but also when using two
A. Zherebov, J. Genoe, Genoe, Jan, Zherebov, Alexei, A. Tameev, Lachinov, A., A. Lachinov, Tameev, A.   +7 more
core   +1 more source

Sliding Ferroelectricity Driven Spin‐Layertronics in Altermagnetic Multilayers

Advanced Science, EarlyView.
Integrating sliding ferroelectricity with altermagnetism enables nonvolatile electrical control of spin and layer degrees of freedom. In bilayer CuF2, interlayer translation reverses layer‐locked spin‐split bands, establishing a multifunctional “spin‐layertronic” platform.
Rui Peng, Guangxu Su, Yangyang Fan, Jiaan Li, Fanxin Liu, Yee Sin Ang   +5 more
wiley   +1 more source

Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

, 2013
Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration.
Peng, H., Luo, X., Wu, Tao, Wang, B., Lin, W., Wu, S., Muller, David A., Wang, J., Van, Tendeloo, G., Turner, S., Ding, Junfeng   +10 more
core   +1 more source

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS2 Memory Transistor

Advanced Science, EarlyView.
Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Yeonsu Jeong, Honglei Wang, Pietro Tordi, Ying Chieh Hu, Adrián Tamayo, Bing Wu, Hyun Soo Ahn, Zdenek Sofer, Jong Hoon Jung, Massimo Bonini, Paolo Samorì   +10 more
wiley   +1 more source

Laser desorption mass spectrometry of nonvolatile biomolecules

, 1981
A new approach for mass analysis of nonvolatile, thermally labile biomolecules by laser desorption mass spectrometry (LDMS) has been developed.
Hardin, Ernest Dwayne
core  

Full integration and cell characteristics for 64Mb nonvolatile PRAM

, 2004
We have integrated a 64Mb nonvolatile random access memory using phase transition phenomena. Based on 0.18um-CMOS technologies, the vertical contact typed memory cell is fabricated.
Kinam Kim, H.C. Koo, Ryoo, K.C., G.T. Jeong, Jeong, Changwook, C.W. Jeong, Y.-T. Kim, S.Y. Lee, Lee, S.Y., Koo, H.C., Kim, Y.-T., Kim, K., K.C. Ryoo, Koh, G.H., Y.N. Hwang, G.H. Koh, S.H. Lee, S.J. Ahn, Lee, S.H., Hwang, Y.N., Ahn, S.J., Jeong, H.S., H.S. Jeong, Jeong, G.T.   +23 more
core   +1 more source

Dual‐Mode Nanoporous SiO2 Memristors with Coexisting Volatile and Nonvolatile Dynamics for Reservoir Computing

Advanced Science, EarlyView.
A nanoporous SiO2 memristor enabling reconfigurable volatile and non‐volatile switching within a single device is demonstrated. The dual‐mode functionality supports both physical reservoir dynamics and synaptic weight storage, allowing unified hardware implementation of reservoir computing for temporal information processing, including image and ...
Bohao Ding, Tongjun Zhang, Li Shao, Nikolay Zhelev, Andrew L. Hector, Ruomeng Huang   +5 more
wiley   +1 more source

Nonvolatile Resistance Switching on Two-Dimensional Electron Gas

, 2016
Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk.
Chong-Yun Kang (1731547), Beom Jin Kwon (1731559), Seong-Hyeon Hong (1560424), Jin-Sang Kim (1509028), Shin-Ik Kim (1731550), Jin-Ha Hwang (1700266), Seok-Jin Yoon (1731541), Dai-Hong Kim (1731538), Ji-Won Choi (1731565), Seong Keun Kim (1309104), Seon Young Moon (1731556), Hyo Jin Gwon (1731553), Seung-Hyub Baek (1509025), Kwang Soo Yoo (1731568), Jin Gwan Joung (1731544), Hye Jung Chang (1731562)   +15 more
core   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Decoupling Volatile and Nonvolatile Response in Reliable Halide Perovskite Memristors

Small Structures
Halide perovskite is very attractive for the fabrication of energy‐efficient memristors for neuromorphic applications. However, reproducibility, stability, and understanding the switching behavior still lag in comparison to other technologies.
Naresh‐Kumar Pendyala, Cedric Gonzales, Antonio Guerrero   +2 more
doaj   +1 more source