Results 131 to 140 of about 20,887 (309)

Imprint Control of Nonvolatile Shape Memory with Asymmetric Ferroelectric Multilayers

open access: yes, 2016
Imprint Control of Nonvolatile Shape Memory with Asymmetric Ferroelectric ...
Young-Han Shin (1700146)   +3 more
core   +1 more source

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices

open access: yesAdvanced Science, EarlyView.
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen   +8 more
wiley   +1 more source

Field‐Free Spin‐Splitting‐Torque Driven Stochastic Neuron Mimicking the Neuromorphic Imagination for High‐Performance Recognition

open access: yesAdvanced Science, EarlyView.
The human brain's imagination, which enables autonomous driving hazard avoidance by completing missing visual information, relies on Gaussian‐stochastic neuron. We report the altermagnetic RuO2 spintronic neurons integrating field‐free switching and intrinsic Gaussian stochasticity, building an all‐spin ANN for high‐quality image repairing and high ...
Junwei Zeng   +9 more
wiley   +1 more source

Nonvolatile programmable neural network synaptic array

open access: yes, 1994
A floating-gate metal oxide semiconductor (MOS) transistor is implemented for use as a nonvolatile analog storage element of a synaptic cell used to implement an array of processing synaptic cells.
Tawel, Raoul
core  

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

open access: yesAdvanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung   +7 more
wiley   +1 more source

Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review

open access: yesAdvanced Science, EarlyView.
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh   +8 more
wiley   +1 more source

Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films

open access: yes, 2019
In this work, we report the fabrication of nonvolatile memory devices based on chemical vapor deposition-grown copper polyphthalocyanine (CuPPc) thin films.
Lili Cao   +9 more
core   +1 more source

Reconfigurable Selector‐Only Memory (SOM) for Scalable Neuromorphic Computing

open access: yesAdvanced Science, EarlyView.
ABSTRACT Highly scalable reconfigurable neuromorphic devices are critical for addressing continual‐learning challenges in artificial intelligence. However, the scalability of existing reconfigurable devices is severely constrained by limited operating margins and insufficient process maturity.
Jin‐Yu Wen   +7 more
wiley   +1 more source

Concurrency implications of nonvolatile byte-addressable memory

open access: yes, 2018
Thesis (Ph. D.)--University of Rochester. Department Computer Science, 2018.In the near future, storage technology advances are expected to provide nonvolatile byte addressable memory (NVM) for general purpose computing.
Scott, Michael L. (1959 - )   +1 more
core  

Multiferroic‐Centric Materials and Systems Engineering for Battery Applications: An Insight Into Mechanisms, Strategies, and Characterizations

open access: yesAdvanced Science, EarlyView.
Multiferroic order parameters – polarization, magnetization, and ferroelastic strain – are positioned as dynamic design variables for batteries. Their mechanistic roles, practical tuning through fabrication and external fields, and ferroic‐resolved characterization routes are unified into a closed‐loop framework, revealing how coupled ferroic responses
Jiaqi Su   +13 more
wiley   +1 more source

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