Results 131 to 140 of about 23,546 (257)

Concurrency implications of nonvolatile byte-addressable memory

, 2018
Thesis (Ph. D.)--University of Rochester. Department Computer Science, 2018.In the near future, storage technology advances are expected to provide nonvolatile byte addressable memory (NVM) for general purpose computing.
Scott, Michael L. (1959 - ), Izraelevitz, Joseph   +1 more
core  

Polyheteroarylene films with intrinsic switching mechanism for nonvolatile memory applications

, 2008
This paper presents a polymer material for the nonvolatile memory applications. Current-voltage characteristics show the reproducible nonvolatile switching effect. The effect is observed not only when using two metallic electrodes but also when using two
A. Zherebov, J. Genoe, Genoe, Jan, Zherebov, Alexei, A. Tameev, Lachinov, A., A. Lachinov, Tameev, A.   +7 more
core   +1 more source

Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review

Advanced Science, EarlyView.
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh, Ki‐bum Lee, Junghyeon Lee, Seunghee Cho, Malkeshkumar Patel, Hangfei Li, Yu Wen, Ye Zhou, Joondong Kim   +8 more
wiley   +1 more source

Decoupling Volatile and Nonvolatile Response in Reliable Halide Perovskite Memristors

Small Structures
Halide perovskite is very attractive for the fabrication of energy‐efficient memristors for neuromorphic applications. However, reproducibility, stability, and understanding the switching behavior still lag in comparison to other technologies.
Naresh‐Kumar Pendyala, Cedric Gonzales, Antonio Guerrero   +2 more
doaj   +1 more source

Multiferroic‐Centric Materials and Systems Engineering for Battery Applications: An Insight Into Mechanisms, Strategies, and Characterizations

Advanced Science, EarlyView.
Multiferroic order parameters – polarization, magnetization, and ferroelastic strain – are positioned as dynamic design variables for batteries. Their mechanistic roles, practical tuning through fabrication and external fields, and ferroic‐resolved characterization routes are unified into a closed‐loop framework, revealing how coupled ferroic responses
Jiaqi Su, Yanda Zhu, Hao Peng, Manman Li, Xuzihan Zhang, Meixiao Wu, Siyuan Zhang, Yuhan Zeng, Jiwen Liao, Ming Luo, Hetaishan Huang, Yutong Wang, Sean Li, Wenxian Li   +13 more
wiley   +1 more source

Nonvolatile Resistance Switching on Two-Dimensional Electron Gas

, 2016
Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk.
Chong-Yun Kang (1731547), Beom Jin Kwon (1731559), Seong-Hyeon Hong (1560424), Jin-Sang Kim (1509028), Shin-Ik Kim (1731550), Jin-Ha Hwang (1700266), Seok-Jin Yoon (1731541), Dai-Hong Kim (1731538), Ji-Won Choi (1731565), Seong Keun Kim (1309104), Seon Young Moon (1731556), Hyo Jin Gwon (1731553), Seung-Hyub Baek (1509025), Kwang Soo Yoo (1731568), Jin Gwan Joung (1731544), Hye Jung Chang (1731562)   +15 more
core   +1 more source

Retinomorphic Visual Processing Enabled by Contact‐Engineered IGZO Optoelectronic Synaptic Memtransistors

Advanced Science, EarlyView.
Here, we present an optoelectronic synaptic memtransistor (OSMT) integrating photoresponsive IGZO with contact‐engineered HfO2, enabling electrically and optically tunable synaptic weights. The device demonstrates broad range of tunable conductance states and array‐level image processing, highlighting its potential for intelligent machine vision ...
Donghyun Kang, San Nam, Dayul Nam, In‐Soo Kim, Myung‐Gil Kim, Sung Kyu Park, Yong‐Hoon Kim   +6 more
wiley   +1 more source

Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide

Nature Communications
A nonvolatile optical phase shifter is a critical component for enabling the fabrication of programmable photonic integrated circuits on a Si photonics platform, facilitating communication, computing, and sensing. Although ferroelectric materials such as
Kazuma Taki, Naoki Sekine, Kouhei Watanabe, Yuto Miyatake, Tomohiro Akazawa, Hiroya Sakumoto, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka   +8 more
doaj   +1 more source

Hydrogen‐Stabilized Self‐Rectifying Memristor Arrays for Reliable Multilevel Synapses in Transformer‐Based Keyword Spotting

Advanced Science, EarlyView.
A non‐filamentary self‐rectifying HfO2/TiOx resistive random‐access memory integrates H2 annealing with an incremental step pulse with verify algorithm to achieve stable and linear analog conductance modulation. The device enables low‐current 6‐bit multilevel operation while suppressing sneak current in crossbar arrays. Implemented in Transformer‐based
Seonjeong Lee, Seohyeon Ju, Won Joo Lee, Myounggon Kang, Sungjun Kim, Yoon Kim   +5 more
wiley   +1 more source

Hierarchical Multi‐Mode Computing in Interlayer‐Coupled 3D RRAM Crossbar Arrays

Advanced Science, EarlyView.
2‐deck RRAM crossbar array provides a versatile hardware platform for multifunctional in‐memory computing. Stacked, series, and entropy node configurations enable multi‐layer conductance modulation, logic‐in‐memory operation, genetic learning, and reconfigurable physical unclonable functions.
Seungman Park, Jaewoo Choi, Gigon Nam, Junsu Yu, Donghyun Ryu, Jung‐Kyu Lee, Sungjoon Kim, Sungjun Kim   +7 more
wiley   +1 more source