Results 161 to 170 of about 24,540 (306)

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

A parsimonious Langmuir-Freundlich loading-response framework for sonochemical degradation of nonvolatile organic contaminants: Model comparison, validation, and identifiability. [PDF]

Ultrason Sonochem
Hamdaoui O.
europepmc   +1 more source

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

Advanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali, David Lehninger, Florencio Sánchez, Ignasi Fina   +3 more
wiley   +1 more source

Direct Mass Spectrometric Detection of VX, RVX, and Novichok A-Series Nerve Agents for Screening Contaminated Sites Using Atmospheric Pressure Corona Discharge Ionization. [PDF]

Anal Chem
Hirose R, Yamaguchi A, Ohmori T, Kazui Y, Otsuka M, Miyaguchi H, Sekimoto K.   +6 more
europepmc   +1 more source

MoS2 Memristors Made by Liquid–Liquid Interface Assembly and Ultraprecise Metal Printing

Advanced Electronic Materials, EarlyView.
A cleanroom‐free, fully additive fabrication route combines ultraprecise printed silver electrodes with Langmuir–Schaefer‐deposited bilayer MoS2 to realize ultralow‐power resistive switching devices. The resulting microscale memories exhibit low operating voltages, a large memory window, stable retention and endurance, demonstrating a scalable and cost‐
Miguel Franco, Daniel Neves, Dorina T. Papanastasiou, Jonas Deuermeier, Tomás Calmeiro, Tomás Mingates, Adam Kelly, Joseph Neilson, Eugénie Martinez, Zdeněk Sofer, Elvira Fortunato, Rodrigo Martins, Emanuel Carlos, Asal Kiazadeh   +13 more
wiley   +1 more source

Two-Dimensional Flash Memory: Materials, Interfaces, and Storage-Computing Convergence. [PDF]

Adv Sci (Weinh)
Wang Z, Meng F, Meng F, Huo S, Xu J, Wang Y, Ma Y, Xie Y, Hu X, Pan C, Wu E.   +10 more
europepmc   +1 more source

Perspective: Quantum Computing on Magnetic Racetrack

Advanced Electronic Materials, EarlyView.
Magnetic domain walls emerge as mobile qubits on quantum racetracks, where chirality encodes quantum information and current‐driven motion enables flying‐qubit functionality. This Perspective outlines the physical principles, gate mechanisms, material requirements, and experimental roadmap for realizing scalable quantum computing with magnetic textures,
Ji Zou, Jelena Klinovaja, Daniel Loss
wiley   +1 more source

Fatty-Acid Composition and Sensory Traits of Japanese Local Chickens in the Context of Asian Local Chicken Meat Quality. [PDF]

Animals (Basel)
Takahashi H.
europepmc   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source

Dual-Mode Nanoporous SiO₂ Memristors with Coexisting Volatile and Nonvolatile Dynamics for Reservoir Computing. [PDF]

Adv Sci (Weinh)
Ding B, Zhang T, Shao L, Zhelev N, Hector AL, Huang R.   +5 more
europepmc   +1 more source