Results 101 to 110 of about 23,546 (257)

Nonvolatile memory devices based on self-assembled nanocrystals

, 2018
Nonvolatile memory devices are one of the most important components in modern electronic devices. Many efforts have been made to fabricate high-density, low-cost, nonvolatile solid-state memory devices for use in portable/mobile electronic devices such ...
Lee, JS
core   +1 more source

Percolation‐Driven β‐Relaxation Enables Resonant Acceleration of Crystallization in Amorphous Phase‐Change Materials

Advanced Materials, EarlyView.
Mobile‐atom percolation underlying β‐relaxations fundamentally dictates the crystallization pathways of phase‐change materials. High‐frequency ultrasonic excitation dynamically modulates this critical mobility percolation network, substantially accelerating the crystallization process.
Yu‐Yao Liu, Liang Gao, Jun‐Ying Jiang, Yiming Zhou, Jan Luebben, Di Zhao, Xiaoling Lu, Maximilian J. Müller, Ulrich Boettger, Jiang‐Jing Wang, Hai‐Bin Yu, Shuai Wei   +11 more
wiley   +1 more source

Design of an Intermittent-Computing-Oriented Nonvolatile Register With a Switching-Probability-Aware Store-and-Verify Scheme

IEEE Access
This paper describes the configuration of a magnetic tunnel junction (MTJ)-based nonvolatile register designed for the greedy utilization of supplied energy in intermittent computing.
Masanori Natsui, Takahiro Hanyu
doaj   +1 more source

Controlled Growth of Boron Nitride in Various Phases

Advanced Materials Interfaces, EarlyView.
Phase‐selective boron nitride growth is presented as a unified materials‐design problem across hexagonal, rhombohedral, cubic, and amorphous phases. By linking synthesis routes to thermodynamic stability, kinetic accessibility, surface diffusion, interfacial templating, and energetic activation, this review clarifies how bonding and stacking are ...
Pan Wu, Kanghao Xie, Jiajie Qi, Xiaorui Zheng, Kaihui Liu, Xuedong Bai, Li Wang   +6 more
wiley   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Nonvolatile magneto-thermal switching driven by vortex trapping in commercial In-Sn solder

Applied Physics Express
Magneto-thermal switching (MTS) is a key technology for efficient thermal management. Recently, large MTS with nonvolatility has been observed in Sn-Pb solders [H. Arima et al. Commun. Mater.
Poonam Rani, Takumi Murakami, Yuto Watanabe, Hossein Sepehri-Amin, Hiroto Arima, Aichi Yamashita, Yoshikazu Mizuguchi   +6 more
doaj   +1 more source

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

Advanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald, Ali Nawaz, Amandeep Singh, Prashant Sonar   +3 more
wiley   +1 more source

Balanced Modulation for Nonvolatile Memories [PDF]

, 2012
This paper presents a practical writing/reading scheme in nonvolatile memories, called balanced modulation, for minimizing the asymmetric component of errors. The main idea is to encode data using a balanced error-correcting code.
Bruck, Jehoshua, Jiang, Anxiao (Andrew), Zhou, Hongchao   +2 more
core  

Disturb‐Resilient and Wake‐up‐Free 2T‐MFMFET Array for Storage and Computing Applications

Advanced Materials Technologies, EarlyView.
A disturb‐resilient and wake‐up‐free 2T‐MFMFET array fabricated using a FeRAM‐compatible process demonstrates excellent uniformity, a large memory window, and 3‐bit multi‐level‐cell storage capability. A newly proposed hybrid in‐memory computing scheme further enables accurate multiply–accumulate operations with minimal refresh overhead, highlighting ...
Chen‐Yi Cho, Ming‐Hung Wu, Yu‐De Lin, Po‐Chun Yeh, Kai Ni, Wen‐Yueh Jang, Tuo‐Hung Hou   +6 more
wiley   +1 more source

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

Advanced Science, 2017
Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐
Wen Li, Fengning Guo, Haifeng Ling, Peng Zhang, Mingdong Yi, Laiyuan Wang, Dequn Wu, Linghai Xie, Wei Huang   +8 more
doaj   +1 more source