Results 81 to 90 of about 24,540 (306)
[[abstract]]A nonvolatile reading of erasable polarization holograms in dye-doped liquid-crystal films using the same writing wavelength is presented. The recorded hologram can be easily erased with the illumination of one p-polarized wave; nevertheless,
Su, Wei-Chia; Chen, Yu-Wen; Yang, Sidney S. ; Jiang, Jhen-Yu; Chen, Hui-Chuan
core
Controlled Nonvolatile Transition in Polyoxometalates‐Graphene Oxide Hybrid Memristive Devices
Graphene oxide (GO)-based nonvolatile memory has triggered tremendous interest owing to its high mechanical flexibility, high optical transparency, low cost fabrication, and environmental friendly manufacture for future flexible and transparent ...
Ding, Guanglong +21 more
core +1 more source
Advances in Bio‐Integrated Edge Computing Systems for Smart and Connected Health
This review explores advances in bio‐integrated edge computing for healthcare, focusing on co‐designing computing, sensing, and energy strategies to overcome integration and power challenges for optimized, decentralized operation. ABSTRACT Recent advances in bio‐integrated healthcare technologies have enabled continuous, high‐resolution monitoring and ...
Gyuwon Kim +4 more
wiley +1 more source
Comparison of Volatile and Nonvolatile Compounds in Rice Fermented by Different Lactic Acid Bacteria
The production of rice-based beverages fermented by lactic acid bacteria (LAB) can increase the consumption of rice in the form of a dairy replacement.
Sang Mi Lee +4 more
doaj +1 more source
All-nanocellulose nonvolatile resistive memory [PDF]
Celano, U., Nagashima, K., Koga, H. et al. All-nanocellulose nonvolatile resistive memory. NPG Asia Mater 8, e310 (2016). https://doi.org/10.1038/am.2016.144.Single-use disposable nonvolatile memory devices hold promise for novel applications in internet
Koga, Hirotaka +10 more
core +1 more source
Thickness‐Defined Transport Regime Toward Near‐Ideal Area‐Type Switching
By thinning the oxide layer, memristors pass from diode‐like and battery‐effect‐dominated behavior toward eventual short‐circuit failure. Within the intermediate 5–6 nm window, they reach a near‐ideal analog area‐type switching regime, featuring symmetric hysteresis, area‐dependent conductance, and continuous linear programming of HRS and LRS with ...
Cuo Wu +12 more
wiley +1 more source
Facile Hydrothermal Synthesis and Resistive Switching Mechanism of the α-Fe2O3 Memristor
Among the transition metal oxides, hematite (α-Fe2O3) has been widely used in the preparation of memristors because of its excellent physical and chemical properties.
Zhiqiang Yu +5 more
doaj +1 more source
Nonvolatile Memristive Effect in Few-Layer CrI3 Driven by Electrostatic Gating
The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials.
Kenji Watanabe (75040) +9 more
core +1 more source
Dense tactile streams from across the humanoid body converge on collide in a central wiring and data bottleneck. By relocating computation closer to and then into the skin itself, near‐ and in‐sensor architectures, together with neuromorphic computing, chart a path toward perception‐native electronic skin, in which the conversion of stimulus into ...
Mijin Kim +6 more
wiley +1 more source
Editorial for the Topic on Magnetic Materials and Devices
Magnets are materials that are characterized by their own persistent magnetic moments [...]
Viktor Sverdlov
doaj +1 more source

