Results 81 to 90 of about 23,546 (257)

Facile Hydrothermal Synthesis and Resistive Switching Mechanism of the α-Fe₂O₃ Memristor

Molecules
Among the transition metal oxides, hematite (α-Fe2O3) has been widely used in the preparation of memristors because of its excellent physical and chemical properties.
Zhiqiang Yu, Qingcheng Wang, Jinhao Jia, Wenbo Kang, Meilian Ou, Zhimou Xu   +5 more
doaj   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Editorial for the Topic on Magnetic Materials and Devices

Micromachines
Magnets are materials that are characterized by their own persistent magnetic moments [...]
Viktor Sverdlov
doaj   +1 more source

Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO₂ Capacitor for Normally Off Application

IEEE Journal of the Electron Devices Society, 2018
In order to realize ultralow power Internet-of-Things (IoT) edge devices, standby leakage current must be suppressed because activity of IoT device is very small in an intermittent mode.
Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, Toshiro Hiramoto   +3 more
doaj   +1 more source

Noise‐Tunable Memristor Enabling Programmable Probabilistic Neurons for Frequency‐Selective Time‐Series Signal Encoding

Advanced Materials, EarlyView.
Memristors offer tunable resistance and intrinsic instability, making them promising tunable noise sources. We propose a spiking‐rate‐programmable probabilistic neuron using a Ru/TaOx/Pt memristor, where resistance‐dependent noise enables frequency‐selective encoding.
Do Hoon Kim, Seoeun Jang, Hakseung Rhee, Min Gu Lee, Daehee Kim, Taewook Go, Woon Hyung Cheong, Hanchan Song, Kyung Min Kim   +8 more
wiley   +1 more source

Current Status of Nonvolatile Semiconductor Memory Technology

, 2010
In this report, an overview of the current status of nonvolatile semiconductor memory technology is presented. We are reaching the integration limit of flash memories, and many new types of memories to replace conventional flash memories have been ...
Yoshihisa Fujisaki
core   +1 more source

Direct Growth of 2D Bilayers on Au(111) for Low‐Coercive Sliding Ferroelectricity

Advanced Materials, EarlyView.
Controlled CVD growth of stacking‐defined bilayer ReS2 on Au(111) enables parallel‐stacked bilayers with intrinsic sliding ferroelectricity, a strong piezoelectric response, and an ultralow coercive voltage. Atomic‐resolution imaging and in situ measurements further reveal the decisive role of clean interfaces in achieving low‐barrier ferroelectric ...
Honglin Chen, Ke Yang, Yuhuan Li, Lingli Huang, Tianren Chen, Ming Yang, Jiong Zhao, Thuc Hue Ly   +7 more
wiley   +1 more source

Plate : persistent memory management for nonvolatile main memory

Over the past few years, nonvolatile memory has actively been researched and developed. Therefore, studying operating system (OS) designs predicated on the main memory in the form of a nonvolatile memory and studying methods to manage persistent data in ...
Goto, Masataka, Taniguchi, Hideo, Nagai, Kengo, Yamauchi, Toshihiro, Matono, Tsukasa, Ichikawa, Masaya, Yamamoto, Yuta, Inamoto, Shinji   +7 more
core   +1 more source

Prospect of Emerging Nonvolatile Memories

, 2004
Conventional nonvolatile memories such as Flash and EEPROM memory have successfully evolved toward high density and low cost. Especially, the market and density of flash memories has grown rapidly which leads semiconductor technology. However, there have
Kinam Kim, Hongsik Jeong
core   +1 more source

Volatile and Nonvolatile Dual‐Mode Switching Operations in an Ag‐Ag2S Core‐Shell Nanoparticle Atomic Switch Network

Advanced Electronic Materials
This paper proposes a nanoparticle‐based atomic switch network memristive device, capable of both volatile and nonvolatile switching operations, which have not been previously reported for this material.
Oradee Srikimkaew, Saverio Ricci, Matteo Porzani, Thien Tan Dang, Yusuke Nakaoka, Yuki Usami, Daniele Ielmini, Hirofumi Tanaka   +7 more
doaj   +1 more source