Results 81 to 90 of about 20,887 (309)
Time‐Resolved Magnetization Switching Dynamics Driven by Orbital Torques
Advanced Functional Materials, EarlyView.Du et al. reveal nanosecond magnetization switching driven by orbital currents using time‐resolved Hall detection. The measurements separate domain nucleation from domain wall propagation and show that Joule heating strongly assists switching by lowering energy barriers.
Ao Du +4 more
wiley +1 more source
III-nitride memristors: materials, devices, and applications
Materials FuturesMemristors, with their compactness, nonvolatile storage, and dynamic resistance modulation, are poised to revolutionize next-generation memory and neuromorphic computing paradigms. III-nitride materials, such as boron nitride (BN), gallium nitride (GaN),
Yang Yang, Haotian Li, Qilin Hua
doaj +1 more source
, 2017 An energy-efficient nonvolatile intelligent processor (NIP) is proposed for battery-less energy harvesting system. This NIP employs RRAM-based nonvolatile logics (NVL) with self-write-termination (SWT) scheme and low-power processing-in-memory (PIM) to ...
Tang, Tianqi +27 more
core +1 more source
Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application
Advanced Materials, EarlyView.This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong +12 more
wiley +1 more source
Journal of Materiomics, 2018 We prepared 300-nm GeTe thin films on (111)-oriented and piezoelectrically active 0.71 Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29 PT) single-crystal substrates by the pulsed laser deposition and investigated the effects of in situ electric-field-controllable ...
Zhi-Xue Xu +9 more
doaj +1 more source
Emergence of ferroelectricity in a nonferroelectric monolayer
Nature Communications, 2023 Ferroelectricity in ultrathin two-dimensional (2D) materials has attracted broad interest due to potential applications in nonvolatile memory, nanoelectronics and optoelectronics.
Wenhui Li +11 more
doaj +1 more source
Current Status of Nonvolatile Semiconductor Memory Technology
, 2010 In this report, an overview of the current status of nonvolatile semiconductor memory technology is presented. We are reaching the integration limit of flash memories, and many new types of memories to replace conventional flash memories have been ...
Yoshihisa Fujisaki
core +1 more source
Advanced Materials, EarlyView.Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam +6 more
wiley +1 more source
Nonvolatile-Memory Characteristics of AlO--Implanted AI2O3
, 2009 The nonvolatile-memory (NVM) characteristics of AIO- -implanted Al2O3structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention.
Robert Elliman (20007516) +5 more
core
Advanced Materials, EarlyView.A Nb‐proximitized Josephson junction based on a WTe2/α‐Fe2O3 heterostructure exhibits a robust superconducting diode effect with programmable polarity. The diode direction can be trained by magnetic fields and switched by temperature cycling, revealing tunable finite‐momentum pairing states and competing superconducting states in symmetry‐broken ...
Enze Zhang +9 more
wiley +1 more source