Results 61 to 70 of about 23,546 (257)

Room‐Temperature Nonvolatile Molecular Memory Based on Partially Unzipped Nanotube

, 2022
Nonvolatile memories have attracted a lot of interest because they retain the data when the power is interrupted. Smaller size and improved performance of nonvolatile memories are pursued both for basic research and applications.
Sun, Liangfeng, Wang, Zhongpu, Jin, Jiyou, Chu, Weiguo, Zhisheng Peng, Peng, Kang, Zhang, Jian, Ya Deng, Zhongpu Wang, Zheng Liu, Yong Jun Li, Li, Yong Jun, Kang Peng, Haonan Wei, Hui Liu, Deng, Ya, Lianfeng Sun, Jiyou Jin, Wei, Haonan, Weiguo Chu, Jian Zhang, Peng, Zhisheng, Liu, Hui, Liu, Zheng   +23 more
core   +1 more source

Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

Advanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies, Bin Han, Paolo Samorì   +2 more
wiley   +1 more source

Hybrid Ferroelectric Tunnel Junctions with Intrinsic Nonlinearity and Self‐Rectification via Interfacial Reconstruction

Advanced Functional Materials, EarlyView.
Rapid thermal annealing reconstructs the BCFO/Nb:STO interface into an atomically thin reconstructed interfacial layer, which reshapes the tunneling barrier and converts a high‐TER ferroelectric tunnel junction into an intrinsically nonlinear, self‐rectifying device.
Hojin Lee, Joonbong Lee, Jinho Byun, Sang‐Hyeok Yang, A young Cho, Sangwoo Lee, Dae Haa Ryu, Hyunbin Chung, Hee Seo Yun, Moon Seop Choi, Yesul Choi, Sungkyun Park, Min‐Hyung Jung, Dongwon Lee, Yoon‐Uk Heo, Hu Young Jeong, Hongseok Kim, Shinhyeong Lee, Yunseok Kim, Young‐Min Kim, Jaekwang Lee, Taekjib Choi   +21 more
wiley   +1 more source

Cellulose nanofiber paper as an ultra flexible nonvolatile memory [PDF]

Nagashima, K., Koga, H., Celano, U. et al. Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory. Sci Rep 4, 5532 (2014). https://doi.org/10.1038/srep05532.On the development of flexible electronics, a highly flexible nonvolatile memory ...
Koga, Hirotaka, Jurczak, Malgorzata, Celano, Umberto, Meng, Gang, Rahong, Sakon, He, Yong, Yanagida, Takeshi, Nogi, Masaya, Vandervorst, Wilfried, Nagashima, Kazuki, Zhuge, Fuwei, Kanai, Masaki, Kitaoka, Takuya, Boeck, Jo De   +13 more
core   +1 more source

III-nitride memristors: materials, devices, and applications

Materials Futures
Memristors, with their compactness, nonvolatile storage, and dynamic resistance modulation, are poised to revolutionize next-generation memory and neuromorphic computing paradigms. III-nitride materials, such as boron nitride (BN), gallium nitride (GaN),
Yang Yang, Haotian Li, Qilin Hua
doaj   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

Anodic Nb2O5 Nonvolatile RRAM

, 2012
We report nonvolatile resistive switching in anodic niobium pentoxide thin-film memory cells. Highly dielectric Nb2O5 films were prepared at room temperature by the anodic oxidation of submicrometer-thick Nb films sputtered onto an Si wafer.
Grishin, Alexander M.,, Velichko, A. A., Kundozerova, Tatyana V.,, Stefanovich, G. B.   +3 more
core   +1 more source

Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructures

Journal of Materiomics, 2018
We prepared 300-nm GeTe thin films on (111)-oriented and piezoelectrically active 0.71 Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29 PT) single-crystal substrates by the pulsed laser deposition and investigated the effects of in situ electric-field-controllable ...
Zhi-Xue Xu, Jian-Min Yan, Meng Xu, Ting-Wei Chen, Lei Guo, Guan-Yin Gao, Xiao-Guang Li, Hao-Su Luo, Yu Wang, Ren-Kui Zheng   +9 more
doaj   +1 more source

Emergence of ferroelectricity in a nonferroelectric monolayer

Nature Communications, 2023
Ferroelectricity in ultrathin two-dimensional (2D) materials has attracted broad interest due to potential applications in nonvolatile memory, nanoelectronics and optoelectronics.
Wenhui Li, Xuanlin Zhang, Jia Yang, Song Zhou, Chuangye Song, Peng Cheng, Yi-Qi Zhang, Baojie Feng, Zhenxing Wang, Yunhao Lu, Kehui Wu, Lan Chen   +11 more
doaj   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source