Results 61 to 70 of about 24,540 (306)
Advanced Functional Materials, EarlyView.Neuromorphic plasticity in OECTs is governed by the post‐stimulus evolution of coupled ionic and electronic states. Semiconductor chemistry and morphology, electrolyte composition and interfaces, and device architecture regulate ion injection, transport, confinement, and release, shifting responses from rapidly relaxing STP to metastable memory and ...
Inho Lee +9 more
wiley +1 more source
Multi‐Level Electro‐Thermal Switching of Optical Phase‐Change Materials Using Graphene
Advanced Photonics Research, 2021 Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real‐world technology. Current active devices available in foundries, however, use volatile methods to modulate light, requiring a constant ...
Carlos Ríos +15 more
doaj +1 more source
A CMOS image sensor with combined analog nonvolatile storage capability
, 2022 S.923-926A light-sensitive pmos-transistor in a floating n-well and combined with an analoge EEPROM has been fabricated as a single element in a standard 1.5 mu m single-poly CMOS/EEPROM technology.
Vogt, H. +4 more
core +1 more source
Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application
Advanced Materials, EarlyView.This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong +12 more
wiley +1 more source
MOS Capacitor on 4H-SiC as a Nonvolatile Memory Element
, 2002 Nonvolatile memory characteristics of MOS capacitors are presented in this letter. The MOS capacitors have been fabricated on N-type 4H SiC substrate with nitrided oxide-semiconductor interface.
Dimitrijev, S, Cheong, KY
core +1 more source
Advanced Materials, EarlyView.Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam +6 more
wiley +1 more source
Design considerations of a nonvolatile accumulator-based 8-bit processor [PDF]
, 2021 The rise of the Internet of Things (IoT) and theconstant growth of portable electronics have leveraged the con-cern with energy consumption. Nonvolatile memory (NVM)emerged as a solution to mitigate the problem due to its abilityto retain data on sleep ...
Cagliari, Bruna Casagranda +2 more
core +1 more source
All-ferroelectric implementation of reservoir computing
Nature Communications, 2023 Reservoir computing (RC) offers efficient temporal information processing with low training cost. All-ferroelectric implementation of RC is appealing because it can fully exploit the merits of ferroelectric memristors (e.g., good controllability ...
Zhiwei Chen +10 more
doaj +1 more source
Nonvolatile memory devices based on self-assembled nanocrystals
, 2018 Nonvolatile memory devices are one of the most important components in modern electronic devices. Many efforts have been made to fabricate high-density, low-cost, nonvolatile solid-state memory devices for use in portable/mobile electronic devices such ...
Lee, JS
core +1 more source
Advanced Materials, EarlyView.A Nb‐proximitized Josephson junction based on a WTe2/α‐Fe2O3 heterostructure exhibits a robust superconducting diode effect with programmable polarity. The diode direction can be trained by magnetic fields and switched by temperature cycling, revealing tunable finite‐momentum pairing states and competing superconducting states in symmetry‐broken ...
Enze Zhang +9 more
wiley +1 more source