Results 31 to 40 of about 23,546 (257)

Ambient energy harvesting nonvolatile processors

, 2015
Energy harvesting is gaining more and more attentions due to its characteristics of ultra-long operation time without maintenance. However, frequent unpredictable power failures from energy harvesters bring performance and reliability challenges to ...
Hehe Li, Zewei Li, Xueqing Li, Li, Zewei, Huazhong Yang, John, Sampson, Sampson John, Xie, Yuan, Li, Hehe, Jiwu Shu, Shu, Jiwu, Yiqun Wang, Wang, Yiqun, Liu, Yongpan, Li, Xueqing, Ma, Kaisheng, Kaisheng Ma, Shuangchen Li, Meng-Fan Chang, Yuan Xie, Yang, Huazhong, Yongpan Liu, Li, Shuangchen, Chang, Meng Fan   +23 more
core   +1 more source

Nonvolatile Reconfigurable 2D Schottky Barrier Transistors

, 2021
Nonvolatile reconfigurable transistors can be used to implement highly flexible and compact logic circuits with low power consumption in maintaining the configuration.
Zijing Zhao, Shaloo Rakheja, Wenjuan Zhu (417072), Wenjuan Zhu, Shaloo Rakheja (11596799), Zijing Zhao (9607469)   +5 more
core   +1 more source

A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET

IEEE Journal of the Electron Devices Society, 2020
This paper proposes a new 8T nonvolatile SRAM (nvSRAM) cell employing ULP FinFETs and ferroelectric FinFETs to enable energy-efficient and low-latency store/recall operations.
Wei-Xiang You, Pin Su, Chenming Hu
doaj   +1 more source

Fabrication Routes for Ionic Conducting Fiber Strain Sensors

Advanced Engineering Materials, EarlyView.
Ionic conducting fiber strain sensors (ICFSs) offer compliant, textile‐integrable sensing. Thus far, the commercialization of ICFSs has been constrained by fiber fabrication routes. This review provides a fabrication‐centric analysis of ICFSs correlating processing strategies with material properties and scalability.
Leo John Kershaw, Zhanhong Yang, Anne Ladegaard Skov, Magdalena Skowyra   +3 more
wiley   +1 more source

Controlled Nonvolatile Transition in Polyoxometalates‐Graphene Oxide Hybrid Memristive Devices

, 2019
Graphene oxide (GO)-based nonvolatile memory has triggered tremendous interest owing to its high mechanical flexibility, high optical transparency, low cost fabrication, and environmental friendly manufacture for future flexible and transparent ...
Ding, Guanglong, Shi‐Rui Zhang, Jingyi Pan, Vellaisamy A. L. Roy, Zhang, Chen, Zhou, Kui, Pan, Jingyi, Xin Zhu, Xiaoli Chen, Pu Huang, Guanglong Ding, Su‐Ting Han, Chen Zhang, Han, Su-Ting, Zhou, Ye, Zhu, Xin, Ye Zhou, Zhang, Shi-Rui, Huang, Pu, Roy, Vellaisamy A. L., Chen, Xiaoli, Kui Zhou   +21 more
core   +1 more source

Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends [PDF]

, 2015
Flexible memory cell array based on high mobility donor-acceptor diketopyrrolopyrrole polymer has been demonstrated. The memory cell exhibits low read voltage, high cell-to-cell uniformity and good mechanical flexibility, and has reliable retention and ...
Roy, V. A. L., Zhuang, Jiaqing, Han, Su-Ting, Roy, V.A.L., Zhou, Li, Zhou, Ye, Sonar, Prashant, Yan, Yan, Roy, VAL, Huang, Long-Biao   +9 more
core   +1 more source

Spin currents and torques in ferromagnetic systems with strong interfacial spin-orbit coupling

Scientific Reports
A three-dimensional description of spin-dependent current transport across nonmagnetic/ferromagnetic interfaces with strong interfacial spin-orbit coupling is presented.
Nils Petter Jørstad, Bernhard Pruckner, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +4 more
doaj   +1 more source

Editorial for the Special Issue on Magnetic and Spin Devices

Micromachines, 2022
As scaling of semiconductor devices displays signs of saturation, the focus of research in microelectronics shifts towards finding new computing paradigms based on novel physical principles [...]
Viktor Sverdlov, Nuttachai Jutong
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source