Results 31 to 40 of about 24,540 (306)
Sliding Ferroelectricity Driven Spin-Layertronics in Altermagnetic Multilayers. [PDF]
Integrating sliding ferroelectricity with altermagnetism enables nonvolatile electrical control of spin and layer degrees of freedom. In bilayer CuF2, interlayer translation reverses layer‐locked spin‐split bands, establishing a multifunctional “spin‐layertronic” platform.
Peng R +5 more
europepmc +2 more sources
Electrically Controlled Meta-Switch With Nonvolatile Functionality
An electrically controlled metaswitch is demonstrated by integrating passive metamaterial (metallic-slot array) with well-established nonvolatile flash memory technology [floating-gate (FG) structure].
Yan Li +3 more
doaj +1 more source
The effects of drying methods on the contents of four nonvolatile and five volatile components and the immunoregulatory activities of four components in Osmamthus fragrans flowers were investigated.
Chang Yuexing +5 more
doaj +1 more source
Advancing Nonvolatile Computing With Nonvolatile NCFET Latches and Flip-Flops
Nonvolatile computing has been proven to be effective in dealing with power supply outages for on-chip check-pointing in emerging energy-harvesting Internet-of-Things applications. It also plays an important role in power-gating to cut off leakage power for higher energy efficiency. However, existing on-chip state backup solutions for D flip–flop (DFF)
Xueqing Li 0002 +10 more
openaire +2 more sources
Nonvolatile ferroelectric domain wall memory
A nonvolatile highly scalable multilevel memory based on ferroelectric domain walls is demonstrated.
Chi Hou Lei +7 more
core +1 more source
A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET
This paper proposes a new 8T nonvolatile SRAM (nvSRAM) cell employing ULP FinFETs and ferroelectric FinFETs to enable energy-efficient and low-latency store/recall operations.
Wei-Xiang You, Pin Su, Chenming Hu
doaj +1 more source
Nonvolatile infrared memory in MoS 2 /PbS van der Waals heterostructures [PDF]
Researchers demonstrate a nonvolatile infrared memory cell operating in the optical communication wavebands.
Shifa, Tofik Ahmed +53 more
core +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Spin currents and torques in ferromagnetic systems with strong interfacial spin-orbit coupling
A three-dimensional description of spin-dependent current transport across nonmagnetic/ferromagnetic interfaces with strong interfacial spin-orbit coupling is presented.
Nils Petter Jørstad +4 more
doaj +1 more source
Kinetics Features Conducive to Cache-Type Nonvolatile Phase-Change Memory
Kinetics Features Conducive to Cache-Type Nonvolatile Phase-Change ...
Zeng, Xierong +11 more
core +1 more source

