Results 41 to 50 of about 8,462 (295)
Nonvolatile electrical switching of optical and valleytronic properties of interlayer excitons
Light: Science & Applications, 2022 Long-lived interlayer excitons (IXs) in van der Waals heterostructures (HSs) stacked by monolayer transition metal dichalcogenides (TMDs) carry valley-polarized information and thus could find promising applications in valleytronic devices.
Tong Ye +6 more
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Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
Advanced Functional Materials, EarlyView.This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
A Reliable and Energy-Efficient Nonvolatile Ternary Memory Based on Hybrid FinFET/RRAM Technology
IEEE Access, 2022 With the successful development of information technology, particularly in big data and neural network scopes, the appetency for denser memory compositions has exponentially outreached.
Aram Yousefi +2 more
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All-nanocellulose nonvolatile resistive memory [PDF]
Celano, U., Nagashima, K., Koga, H. et al. All-nanocellulose nonvolatile resistive memory. NPG Asia Mater 8, e310 (2016). https://doi.org/10.1038/am.2016.144.Single-use disposable nonvolatile memory devices hold promise for novel applications in internet
Koga, Hirotaka +10 more
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Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor
Advanced Functional Materials, EarlyView.Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben +6 more
wiley +1 more source
Editorial for the Topic on Magnetic Materials and Devices
MicromachinesMagnets are materials that are characterized by their own persistent magnetic moments [...]
Viktor Sverdlov
doaj +1 more source
Journal of Materiomics, 2018 We prepared 300-nm GeTe thin films on (111)-oriented and piezoelectrically active 0.71 Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29 PT) single-crystal substrates by the pulsed laser deposition and investigated the effects of in situ electric-field-controllable ...
Zhi-Xue Xu +9 more
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Advanced Functional Materials, EarlyView.This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
wiley +1 more source
MicromachinesIn advancing the study of magnetization dynamics in STT-MRAM devices, we employ the spin drift–diffusion model to address the back-hopping effect. This issue manifests as unwanted switching either in the composite free layer or in the reference layer in ...
Mario Bendra +4 more
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Flash-memories in Space Applications: Trends and Challenges [PDF]
, 2009 Nowadays space applications are provided with a processing power absolutely overcoming the one available just a few years ago. Typical mission-critical space system applications include also the issue of solid-state recorder(s).
Caramia, M. +4 more
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