Results 41 to 50 of about 1,753,751 (305)

Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructures

Journal of Materiomics, 2018
We prepared 300-nm GeTe thin films on (111)-oriented and piezoelectrically active 0.71 Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29 PT) single-crystal substrates by the pulsed laser deposition and investigated the effects of in situ electric-field-controllable ...
Zhi-Xue Xu, Jian-Min Yan, Meng Xu, Ting-Wei Chen, Lei Guo, Guan-Yin Gao, Xiao-Guang Li, Hao-Su Luo, Yu Wang, Ren-Kui Zheng   +9 more
doaj   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling

Micromachines
In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the spin drift–diffusion model to address the back-hopping effect. This issue manifests as unwanted switching either in the composite free layer or in the reference layer in ...
Mario Bendra, Roberto Lacerda de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov   +4 more
doaj   +1 more source

A Reliable and Energy-Efficient Nonvolatile Ternary Memory Based on Hybrid FinFET/RRAM Technology

IEEE Access, 2022
With the successful development of information technology, particularly in big data and neural network scopes, the appetency for denser memory compositions has exponentially outreached.
Aram Yousefi, Nima Eslami, Mohammad Hossein Moaiyeri   +2 more
doaj   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Memristor-Based Nonvolatile Random Access Memory: Hybrid Architecture for Low Power Compact Memory Design

IEEE Access, 2013
In this paper, a new approach toward the design of a memristor based nonvolatile static random-access memory (SRAM) cell using a combination of memristor and metal-oxide semiconductor devices is proposed. Memristor and MOSFETs of the Taiwan Semiconductor
Syed Shakib Sarwar, Syed An Nazmus Saqueb, Farhan Quaiyum, A. B. M. Harun-Ur Rashid   +3 more
doaj   +1 more source

Forming-free bipolar and unipolar resistive switching behaviors with low operating voltage in Ag/Ti/CeO2/Pt devices

Results in Physics, 2020
Resistive switching devices are promising candidates to replace today’s nonvolatile memory device, and find applications in neuromorphic computing. In this study, bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors at room ...
Wenqing Wang, Baolin Zhang, Hongbin Zhao
doaj   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Nonvolatile ferroelectric domain wall memory

, 2017
A nonvolatile highly scalable multilevel memory based on ferroelectric domain walls is demonstrated.
Chi Hou Lei, Yunya Liu, Daniel Sando, Valanoor Nagarajan, Pankaj Sharma, Qi Zhang, Jan Seidel, Jiangyu Li   +7 more
core   +1 more source

Reservoir‐Driven Neuromorphic Computing Based on Composite Rare‐Earth/Transition Metal Oxide Memristor

Advanced Functional Materials, EarlyView.
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar, Haider Abbas, Muhammad Rabeel, Honggyun Kim, Ghulam Dastgeer, Muhammad Nasim, Furqan Zahoor, Yawar Abbas, Waqas Ahmad, Deok‐kee Kim   +9 more
wiley   +1 more source