Results 41 to 50 of about 8,490 (292)

Nonvolatile memory devices based on self-assembled nanocrystals [PDF]

, 2018
Nonvolatile memory devices are one of the most important components in modern electronic devices. Many efforts have been made to fabricate high-density, low-cost, nonvolatile solid-state memory devices for use in portable/mobile electronic devices such ...
Lee, JS
core   +1 more source

Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO₂ Capacitor for Normally Off Application

IEEE Journal of the Electron Devices Society, 2018
In order to realize ultralow power Internet-of-Things (IoT) edge devices, standby leakage current must be suppressed because activity of IoT device is very small in an intermittent mode.
Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, Toshiro Hiramoto   +3 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Plate : persistent memory management for nonvolatile main memory [PDF]

Over the past few years, nonvolatile memory has actively been researched and developed. Therefore, studying operating system (OS) designs predicated on the main memory in the form of a nonvolatile memory and studying methods to manage persistent data in ...
Goto, Masataka, Taniguchi, Hideo, Nagai, Kengo, Yamauchi, Toshihiro, Matono, Tsukasa, Ichikawa, Masaya, Yamamoto, Yuta, Inamoto, Shinji   +7 more
core   +1 more source

Current Status of Nonvolatile Semiconductor Memory Technology [PDF]

, 2010
In this report, an overview of the current status of nonvolatile semiconductor memory technology is presented. We are reaching the integration limit of flash memories, and many new types of memories to replace conventional flash memories have been ...
Yoshihisa Fujisaki
core   +1 more source

Spin currents and torques in ferromagnetic systems with strong interfacial spin-orbit coupling

Scientific Reports
A three-dimensional description of spin-dependent current transport across nonmagnetic/ferromagnetic interfaces with strong interfacial spin-orbit coupling is presented.
Nils Petter Jørstad, Bernhard Pruckner, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +4 more
doaj   +1 more source

Nonvolatile electrical switching of optical and valleytronic properties of interlayer excitons

Light: Science & Applications, 2022
Long-lived interlayer excitons (IXs) in van der Waals heterostructures (HSs) stacked by monolayer transition metal dichalcogenides (TMDs) carry valley-polarized information and thus could find promising applications in valleytronic devices.
Tong Ye, Yongzhuo Li, Junze Li, Hongzhi Shen, Junwen Ren, Cun-Zheng Ning, Dehui Li   +6 more
doaj   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Nonvolatile-Memory Characteristics of AlO--Implanted AI2O3 [PDF]

, 2009
The nonvolatile-memory (NVM) characteristics of AIO- -implanted Al2O3structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention.
Robert Elliman (20007516), Salvy Russo (18029545), Suk-Ho Choi (1492645), K Belay (19660939), Sung Kim (59072), Min Kim (218786)   +5 more
core  

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source