Results 21 to 30 of about 8,462 (295)

An 8kb RRAM-Based Nonvolatile SRAM with Pre-Decoding and Fast Storage/Restoration Time

Applied Sciences, 2022
Combining the advantages of low-power consumption of static random access memory (SRAM) with high stability and nonvolatile of resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell was proposed in this paper.
Jiayu Yin, Wenli Liao, Yuyan Zhang, Jianhua Jiang, Chengying Chen   +4 more
doaj   +1 more source

An organic nonvolatile memory using space charge polarization of a gate dielectric [PDF]

, 2009
We realize a nonvolatile and rewritable memory effect in an organic field-effect transistor (OFET) structure using polymethylmethacryrate (PMMA) dispersed with 10-methyl-9-phenylacridinium perchlorate (MPA^+ClO_4^−) as a gate dielectric.
Murata, Hideyuki, Matsushima, Toshinori, Konno, Kodai, Sakai, Heisuke   +3 more
core   +1 more source

Recent advances in metal nanoparticle‐based floating gate memory

Nano Select, 2021
Nonvolatile memory is distinguished for the application in many electronic products due to its excellent charge storage ability. Nevertheless, as the device dimensions are scaled down, floating gate memory encounters various challenges: the increasing ...
Hongye Chen, Ye Zhou, Su‐Ting Han
doaj   +1 more source

Hardware Transactions in Nonvolatile Memory [PDF]

, 2015
Hardware transactional memory (HTM) implementations already provide a transactional abstraction at HW speed in multi-core systems. The imminent availability of mature byte-addressable, nonvolatile memory (NVM) will provide persistence at the speed of accessing main memory.
Hillel Avni, Eliezer Levy, Avi Mendelson
openaire   +1 more source

Material Modeling in Semiconductor Process Applications

Journal of Microelectronic Manufacturing, 2020
During the past decade, significant progress has been achieved in the application of material modeling to aid technology development in semiconductor manufacturing companies such as Intel.
Boris A. Voinov, Patrick H. Keys, Stephen M. Cea, Ananth P. Kaushik, Mark A. Stettler   +4 more
doaj   +1 more source

Implementation of Highly Reliable and Energy‐Efficient Nonvolatile In‐Memory Computing using Multistate Domain Wall Spin–Orbit Torque Device

Advanced Intelligent Systems, 2022
Emerging in‐memory computing (IMC) technology promises to tackle the memory wall bottleneck in modern systems. Promoted as a promising building block, nonvolatile spin–orbit torque (SOT) memory devices with sub‐ns and sub‐pJ processing capabilities are ...
Huai Lin, Nuo Xu, Di Wang, Long Liu, Xuefeng Zhao, Yongjian Zhou, Xuming Luo, Cheng Song, Guoqiang Yu, Guozhong Xing   +9 more
doaj   +1 more source

Emergence of ferroelectricity in a nonferroelectric monolayer

Nature Communications, 2023
Ferroelectricity in ultrathin two-dimensional (2D) materials has attracted broad interest due to potential applications in nonvolatile memory, nanoelectronics and optoelectronics.
Wenhui Li, Xuanlin Zhang, Jia Yang, Song Zhou, Chuangye Song, Peng Cheng, Yi-Qi Zhang, Baojie Feng, Zhenxing Wang, Yunhao Lu, Kehui Wu, Lan Chen   +11 more
doaj   +1 more source

Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends [PDF]

, 2015
Flexible memory cell array based on high mobility donor-acceptor diketopyrrolopyrrole polymer has been demonstrated. The memory cell exhibits low read voltage, high cell-to-cell uniformity and good mechanical flexibility, and has reliable retention and ...
Roy, V. A. L., Zhuang, Jiaqing, Han, Su-Ting, Roy, V.A.L., Zhou, Li, Zhou, Ye, Sonar, Prashant, Yan, Yan, Roy, VAL, Huang, Long-Biao   +9 more
core   +1 more source

Non-Volatile Transistor Memory with a Polypeptide Dielectric

Molecules, 2020
Organic nonvolatile transistor memory with synthetic polypeptide derivatives as dielectric was fabricated by a solution process. When only poly (γ-benzyl-l-glutamate) (PBLG) was used as dielectric, the device did not show obvious hysteresis in ...
Lijuan Liang, Wenjuan He, Rong Cao, Xianfu Wei, Sei Uemura, Toshihide Kamata, Kazuki Nakamura, Changshuai Ding, Xuying Liu, Norihisa Kobayashi   +9 more
doaj   +1 more source

Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion

Advanced Electronic Materials, 2022
2D materials are increasingly being investigated for their nonvolatile switching properties as a step toward downscaling of core electronic elements. Here, the interplay between electrochemically active silver (Ag) cations and layered indium selenide ...
Aishani Mazumder, Taimur Ahmed, Edwin Mayes, Sherif Abdulkader Tawfik, Salvy P. Russo, Mei Xian Low, Abhishek Ranjan, Sivacarendran Balendhran, Sumeet Walia   +8 more
doaj   +1 more source