Results 21 to 30 of about 1,753,751 (305)

Implementation of Highly Reliable and Energy‐Efficient Nonvolatile In‐Memory Computing using Multistate Domain Wall Spin–Orbit Torque Device

Advanced Intelligent Systems, 2022
Emerging in‐memory computing (IMC) technology promises to tackle the memory wall bottleneck in modern systems. Promoted as a promising building block, nonvolatile spin–orbit torque (SOT) memory devices with sub‐ns and sub‐pJ processing capabilities are ...
Huai Lin, Nuo Xu, Di Wang, Long Liu, Xuefeng Zhao, Yongjian Zhou, Xuming Luo, Cheng Song, Guoqiang Yu, Guozhong Xing   +9 more
doaj   +1 more source

Material Modeling in Semiconductor Process Applications

Journal of Microelectronic Manufacturing, 2020
During the past decade, significant progress has been achieved in the application of material modeling to aid technology development in semiconductor manufacturing companies such as Intel.
Boris A. Voinov, Patrick H. Keys, Stephen M. Cea, Ananth P. Kaushik, Mark A. Stettler   +4 more
doaj   +1 more source

Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion

Advanced Electronic Materials, 2022
2D materials are increasingly being investigated for their nonvolatile switching properties as a step toward downscaling of core electronic elements. Here, the interplay between electrochemically active silver (Ag) cations and layered indium selenide ...
Aishani Mazumder, Taimur Ahmed, Edwin Mayes, Sherif Abdulkader Tawfik, Salvy P. Russo, Mei Xian Low, Abhishek Ranjan, Sivacarendran Balendhran, Sumeet Walia   +8 more
doaj   +1 more source

Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends [PDF]

, 2015
Flexible memory cell array based on high mobility donor-acceptor diketopyrrolopyrrole polymer has been demonstrated. The memory cell exhibits low read voltage, high cell-to-cell uniformity and good mechanical flexibility, and has reliable retention and ...
Roy, V. A. L., Zhuang, Jiaqing, Han, Su-Ting, Roy, V.A.L., Zhou, Li, Zhou, Ye, Sonar, Prashant, Yan, Yan, Roy, VAL, Huang, Long-Biao   +9 more
core   +1 more source

Non-Volatile Transistor Memory with a Polypeptide Dielectric

Molecules, 2020
Organic nonvolatile transistor memory with synthetic polypeptide derivatives as dielectric was fabricated by a solution process. When only poly (γ-benzyl-l-glutamate) (PBLG) was used as dielectric, the device did not show obvious hysteresis in ...
Lijuan Liang, Wenjuan He, Rong Cao, Xianfu Wei, Sei Uemura, Toshihide Kamata, Kazuki Nakamura, Changshuai Ding, Xuying Liu, Norihisa Kobayashi   +9 more
doaj   +1 more source

Emergence of ferroelectricity in a nonferroelectric monolayer

Nature Communications, 2023
Ferroelectricity in ultrathin two-dimensional (2D) materials has attracted broad interest due to potential applications in nonvolatile memory, nanoelectronics and optoelectronics.
Wenhui Li, Xuanlin Zhang, Jia Yang, Song Zhou, Chuangye Song, Peng Cheng, Yi-Qi Zhang, Baojie Feng, Zhenxing Wang, Yunhao Lu, Kehui Wu, Lan Chen   +11 more
doaj   +1 more source

High-Performance Silicon Nanowire Electronics [PDF]

, 2012
This thesis explores 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications via the fabrication and testing of SiNW-based ring oscillators.
Huang, Ruo-Gu
core   +1 more source

Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3

npj 2D Materials and Applications, 2021
The ability to couple the in-plane (IP) and out-of-plane (OOP) dipole polarizations in ferroelectric In2Se3 makes it a promising material for multimodal memory and optoelectronic applications.
Debopriya Dutta, Subhrajit Mukherjee, Michael Uzhansky, Elad Koren   +3 more
doaj   +1 more source

A Facile Hydrothermal Synthesis and Resistive Switching Behavior of α-Fe₂O₃ Nanowire Arrays

Molecules, 2023
A facile hydrothermal process has been developed to synthesize the α-Fe2O3 nanowire arrays with a preferential growth orientation along the [110] direction.
Zhiqiang Yu, Jiamin Xu, Baosheng Liu, Zijun Sun, Qingnan Huang, Meilian Ou, Qingcheng Wang, Jinhao Jia, Wenbo Kang, Qingquan Xiao, Tinghong Gao, Quan Xie   +11 more
doaj   +1 more source

High-Temperature Ferroelectric Behavior of Al_0.7Sc_0.3N

Micromachines, 2022
Currently, there is a lack of nonvolatile memory (NVM) technology that can operate continuously at temperatures > 200 °C. While ferroelectric NVM has previously demonstrated long polarization retention and >1013 read/write cycles at room temperature, the
Daniel Drury, Keisuke Yazawa, Andriy Zakutayev, Brendan Hanrahan, Geoff Brennecka   +4 more
doaj   +1 more source