Results 11 to 20 of about 8,462 (295)

An upconverted photonic nonvolatile memory [PDF]

Nature Communications, 2014
Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with
Ye, Zhou, Su-Ting, Han, Xian, Chen, Feng, Wang, Yong-Bing, Tang, V A L, Roy   +5 more
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Nonvolatile ferroelectric domain wall memory [PDF]

Science Advances, 2017
A nonvolatile highly scalable multilevel memory based on ferroelectric domain walls is demonstrated.
Sharma, Pankaj, Zhang, Qi, Sando, Daniel, Lei, Chi Hou, Liu, Yunya, Li, Jiangyu, Nagarajan, Valanoor, Seidel, Jan   +7 more
openaire   +3 more sources

On Error Correction for Nonvolatile Processing-In-Memory

2024 ACM/IEEE 51st Annual International Symposium on Computer Architecture (ISCA)
Processing in memory (PiM) represents a promising computing paradigm to enhance performance of numerous data-intensive applications. Variants performing computing directly in emerging nonvolatile memories can deliver very high energy efficiency. PiM architectures directly inherit the vulnerabilities of the underlying memory substrates, but they also ...
Hüsrev Cilasun, Salonik Resch, Zamshed I. Chowdhury, Masoud Zabihi, Yang Lv 0003, Brandon Zink, Jianping Wang 0006, Sachin S. Sapatnekar, Ulya R. Karpuzcu   +8 more
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Cellulose nanofiber paper as an ultra flexible nonvolatile memory. [PDF]

Sci Rep, 2014
Nagashima, K., Koga, H., Celano, U. et al. Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory. Sci Rep 4, 5532 (2014). https://doi.org/10.1038/srep05532.On the development of flexible electronics, a highly flexible nonvolatile memory ...
Nagashima K, Koga H, Celano U, Zhuge F, Kanai M, Rahong S, Meng G, He Y, De Boeck J, Jurczak M, Vandervorst W, Kitaoka T, Nogi M, Yanagida T.   +13 more
europepmc   +2 more sources

Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell

Molecules, 2023
A facile sol–gel spin coating method has been proposed for the synthesis of spin-coated ZnO nanofilms on ITO substrates. The as-prepared ZnO-nanofilm-based W/ZnO/ITO memory cell showed forming-free and tunable nonvolatile multilevel resistive switching ...
Zhiqiang Yu, Jinhao Jia, Xinru Qu, Qingcheng Wang, Wenbo Kang, Baosheng Liu, Qingquan Xiao, Tinghong Gao, Quan Xie   +8 more
doaj   +1 more source

Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films. [PDF]

ACS Omega, 2019
In this work, we report the fabrication of nonvolatile memory devices based on chemical vapor deposition-grown copper polyphthalocyanine (CuPPc) thin films.
Guo X, Liu J, Cao L, Liang Q, Lei S.
europepmc   +2 more sources

Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM

IEEE Journal of the Electron Devices Society, 2020
In spin-transfer torque magnetoresistive random access memory, the magnetization dynamics of a free layer is usually assumed to be determined by the torque created via a position-independent current density.
S. Fiorentini, R. L. de Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov   +5 more
doaj   +1 more source

The Shuttle Nanoelectromechanical Nonvolatile Memory [PDF]

IEEE Transactions on Electron Devices, 2012
Nonvolatile memory (NVM) devices based on storage layers, p-n junctions and transistors, such as FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling. This paper presents the structure, operation, and modeling of a nanoelectromechanical NVM based on the switching of a free electrode between two stable ...
Pott, Vincent, Chua, Geng Li, Vaddi, Ramesh, Tsai, Julius Ming-Lin, Kim, Tony Tae-Hyoung   +4 more
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Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide

Materials Today Advances, 2022
Non-charge-storage-based nonvolatile memory characteristics associated with oxygen ion exchange are demonstrated in a thin-film transistor (TFT) composed of an indium-zinc oxide (IZO) channel and an oxygen-deficient HfO2–x gate oxide.
Jimin Han, Boyoung Jeong, Yuri Kim, Joonki Suh, Hongsik Jeong, Hyun-Mi Kim, Tae-Sik Yoon   +6 more
doaj   +1 more source

Editorial for the Special Issue on Magnetic and Spin Devices, Volume II

Micromachines, 2023
Although the miniaturization of metal–oxide–semiconductor field effect transistors (MOSFETs)—the main driver behind an outstanding increase in the speed, performance, density, and complexity of modern integrated circuits—is continuing, numerous ...
Viktor Sverdlov, Seung-Bok Choi
doaj   +1 more source