Results 31 to 40 of about 1,732,535 (211)

Nonvolatile ferroelectric domain wall memory

, 2017
A nonvolatile highly scalable multilevel memory based on ferroelectric domain walls is demonstrated.
Chi Hou Lei, Yunya Liu, Daniel Sando, Valanoor Nagarajan, Pankaj Sharma, Qi Zhang, Jan Seidel, Jiangyu Li   +7 more
core   +1 more source

Dataset for the publication "Reversal of nanomagnets by propagating magnons in ferrimagnetic yttrium iron garnet enabling nonvolatile magnon memory"

, 2023
Raw data associated to the manuscript ‘’Reversal of nanomagnets by propagating magnons in ferrimagnetic yttrium iron garnet enabling nonvolatile magnon memory‘’, Nature Communications (2023); doi: https://doi.org/10.1038/s41467-023-37078-8 Information ...
Baumgaertl. Korbinian, Grundler, Dirk, Baumgärtl, Korbinian   +2 more
core   +1 more source

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

Advanced Science, 2017
Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐
Wen Li, Fengning Guo, Haifeng Ling, Peng Zhang, Mingdong Yi, Laiyuan Wang, Dequn Wu, Linghai Xie, Wei Huang   +8 more
doaj   +1 more source

Imprint Control of Nonvolatile Shape Memory with Asymmetric Ferroelectric Multilayers

, 2016
Imprint Control of Nonvolatile Shape Memory with Asymmetric Ferroelectric ...
Young-Han Shin (1700146), Jong Yeog Son (1700149), Woo-Hee Kim (1700152), Hyun Myung Jang (1487470)   +3 more
core   +1 more source

Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO₂ Capacitor for Normally Off Application

IEEE Journal of the Electron Devices Society, 2018
In order to realize ultralow power Internet-of-Things (IoT) edge devices, standby leakage current must be suppressed because activity of IoT device is very small in an intermittent mode.
Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, Toshiro Hiramoto   +3 more
doaj   +1 more source

Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization

, 2019
Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent ...
Zhao, Yuelei, Zhang, Xixiang, Yan, Shishen, Tian, Yufeng, Zhang, Qiang, Bai, Lihui, Cai, Jianwang, Chen, Yanxue, Kang, Shishou, Zhong, Hai, Huang, Qikun, Wen, Yan, Li, Run-Wei   +12 more
core   +1 more source

Spin currents and torques in ferromagnetic systems with strong interfacial spin-orbit coupling

Scientific Reports
A three-dimensional description of spin-dependent current transport across nonmagnetic/ferromagnetic interfaces with strong interfacial spin-orbit coupling is presented.
Nils Petter Jørstad, Bernhard Pruckner, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +4 more
doaj   +1 more source

Modeling spin-orbit torque driven magnetization dynamics in emerging magnetoresistive devices: a finite element method approach

npj Spintronics
We present a versatile three-dimensional finite element simulation framework that couples a charge and spin drift-diffusion formalism, extended to include interfacial spin-orbit coupling, with the Landau-Lifshitz-Gilbert equation.
Nils Petter Jørstad, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +3 more
doaj   +1 more source

Nonvolatile electrical switching of optical and valleytronic properties of interlayer excitons

Light: Science & Applications, 2022
Long-lived interlayer excitons (IXs) in van der Waals heterostructures (HSs) stacked by monolayer transition metal dichalcogenides (TMDs) carry valley-polarized information and thus could find promising applications in valleytronic devices.
Tong Ye, Yongzhuo Li, Junze Li, Hongzhi Shen, Junwen Ren, Cun-Zheng Ning, Dehui Li   +6 more
doaj   +1 more source

The Shuttle Nanoelectromechanical Nonvolatile Memory [PDF]

IEEE Transactions on Electron Devices, 2012
Nonvolatile memory (NVM) devices based on storage layers, p-n junctions and transistors, such as FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling. This paper presents the structure, operation, and modeling of a nanoelectromechanical NVM based on the switching of a free electrode between two stable ...
Pott, Vincent, Chua, Geng Li, Vaddi, Ramesh, Tsai, Julius Ming-Lin, Kim, Tony Tae-Hyoung   +4 more
openaire   +2 more sources