Results 31 to 40 of about 8,490 (292)

High-Performance Silicon Nanowire Electronics [PDF]

, 2012
This thesis explores 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications via the fabrication and testing of SiNW-based ring oscillators.
Huang, Ruo-Gu
core   +1 more source

A multilevel nonvolatile magnetoelectric memory

Scientific Reports, 2016
AbstractThe coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade.
Jianxin Shen, Junzhuang Cong, Dashan Shang, Yisheng Chai, Shipeng Shen, Kun Zhai, Young Sun   +6 more
openaire   +2 more sources

Ferroelectric deep trench capacitors based on Al:HfO2 for 3D nonvolatile memory applications [PDF]

, 2022
4 S.Aiming for future nonvolatile memory applications the fabrication and electrical characterization of 3-dimensional trench capacitors based on ferroelectric HfO2 is reported.
Müller, Johannes, Sundqvist, Jonas, Seidel, Konrad, Weinreich, Wenke, Riedel, Stefan, Polakowski, Patrick, Rudolf, M.   +6 more
core   +1 more source

Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3

npj 2D Materials and Applications, 2021
The ability to couple the in-plane (IP) and out-of-plane (OOP) dipole polarizations in ferroelectric In2Se3 makes it a promising material for multimodal memory and optoelectronic applications.
Debopriya Dutta, Subhrajit Mukherjee, Michael Uzhansky, Elad Koren   +3 more
doaj   +1 more source

A Facile Hydrothermal Synthesis and Resistive Switching Behavior of α-Fe₂O₃ Nanowire Arrays

Molecules, 2023
A facile hydrothermal process has been developed to synthesize the α-Fe2O3 nanowire arrays with a preferential growth orientation along the [110] direction.
Zhiqiang Yu, Jiamin Xu, Baosheng Liu, Zijun Sun, Qingnan Huang, Meilian Ou, Qingcheng Wang, Jinhao Jia, Wenbo Kang, Qingquan Xiao, Tinghong Gao, Quan Xie   +11 more
doaj   +1 more source

High-Temperature Ferroelectric Behavior of Al_0.7Sc_0.3N

Micromachines, 2022
Currently, there is a lack of nonvolatile memory (NVM) technology that can operate continuously at temperatures > 200 °C. While ferroelectric NVM has previously demonstrated long polarization retention and >1013 read/write cycles at room temperature, the
Daniel Drury, Keisuke Yazawa, Andriy Zakutayev, Brendan Hanrahan, Geoff Brennecka   +4 more
doaj   +1 more source

Nonvolatile memories

, 2018
The need for faster, smaller, cheaper and energy-efficient electronic devices has been growing continuously in the last decade, with the conventional data storage technologies (i.e., static random access memory and dynamic random access memory), which have been so far fulfilled by CMOS-charge storage-based circuits, approaching their fundamental limits,
Rocha, Leandro S.R., Simões, Alexandre Z., Cortés, Johan A., Ramirez, Miguel A., Moura, Francisco, Foschini, Cesar R., Tararam, Ronald, Cilense, Mario, Longo, Elson, Paiva-Santos, Carlos O.   +9 more
openaire   +2 more sources

Polymer and organic nonvolatile memory devices [PDF]

, 2010
Organic molecules and semiconductors have been proposed as active part of a large variety of nonvolatile memory devices, including resistors, diodes and transistors. In this review, we focus on electrically reprogrammable nonvolatile memories.
Noh, Y.Y., Muller, Robert, Yong-Young Noh, Heremans, Paul, Heremans, P., Müller, R., Kim, D.Y., Paul Heremans, Dong-Yu Kim, Gerwin H. Gelinck, Gelinck, G.H., Baeg, K.J., Kang-Jun Baeg, Noh, Yong-Young, Gelinck, Gerwin H., Kim, Dong-Yu, Robert Müller, Baeg, Kang-Jun   +17 more
core   +1 more source

FSL: Fast system launch through persistent computing with nonvolatile memory [PDF]

, 2017
Next generation memory technologies, which we denote as new memory, have both nonvolatile and byte addressable properties. These characteristics are expected to bring changes to the conventional computer system structure.
Sam H. Noh, Hyeonho Song, Song, Hyeonho, Noh, Sam H.   +3 more
core   +1 more source

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

Advanced Science, 2017
Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐
Wen Li, Fengning Guo, Haifeng Ling, Peng Zhang, Mingdong Yi, Laiyuan Wang, Dequn Wu, Linghai Xie, Wei Huang   +8 more
doaj   +1 more source