Results 31 to 40 of about 8,462 (295)

High-Performance Silicon Nanowire Electronics [PDF]

, 2012
This thesis explores 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications via the fabrication and testing of SiNW-based ring oscillators.
Huang, Ruo-Gu
core   +1 more source

A multilevel nonvolatile magnetoelectric memory

Scientific Reports, 2016
AbstractThe coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade.
Jianxin Shen, Junzhuang Cong, Dashan Shang, Yisheng Chai, Shipeng Shen, Kun Zhai, Young Sun   +6 more
openaire   +2 more sources

Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3

npj 2D Materials and Applications, 2021
The ability to couple the in-plane (IP) and out-of-plane (OOP) dipole polarizations in ferroelectric In2Se3 makes it a promising material for multimodal memory and optoelectronic applications.
Debopriya Dutta, Subhrajit Mukherjee, Michael Uzhansky, Elad Koren   +3 more
doaj   +1 more source

High-Temperature Ferroelectric Behavior of Al_0.7Sc_0.3N

Micromachines, 2022
Currently, there is a lack of nonvolatile memory (NVM) technology that can operate continuously at temperatures > 200 °C. While ferroelectric NVM has previously demonstrated long polarization retention and >1013 read/write cycles at room temperature, the
Daniel Drury, Keisuke Yazawa, Andriy Zakutayev, Brendan Hanrahan, Geoff Brennecka   +4 more
doaj   +1 more source

A Facile Hydrothermal Synthesis and Resistive Switching Behavior of α-Fe₂O₃ Nanowire Arrays

Molecules, 2023
A facile hydrothermal process has been developed to synthesize the α-Fe2O3 nanowire arrays with a preferential growth orientation along the [110] direction.
Zhiqiang Yu, Jiamin Xu, Baosheng Liu, Zijun Sun, Qingnan Huang, Meilian Ou, Qingcheng Wang, Jinhao Jia, Wenbo Kang, Qingquan Xiao, Tinghong Gao, Quan Xie   +11 more
doaj   +1 more source

Nonvolatile memories

, 2018
The need for faster, smaller, cheaper and energy-efficient electronic devices has been growing continuously in the last decade, with the conventional data storage technologies (i.e., static random access memory and dynamic random access memory), which have been so far fulfilled by CMOS-charge storage-based circuits, approaching their fundamental limits,
Rocha, Leandro S.R., Simões, Alexandre Z., Cortés, Johan A., Ramirez, Miguel A., Moura, Francisco, Foschini, Cesar R., Tararam, Ronald, Cilense, Mario, Longo, Elson, Paiva-Santos, Carlos O.   +9 more
openaire   +2 more sources

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

Advanced Science, 2017
Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐
Wen Li, Fengning Guo, Haifeng Ling, Peng Zhang, Mingdong Yi, Laiyuan Wang, Dequn Wu, Linghai Xie, Wei Huang   +8 more
doaj   +1 more source

Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO₂ Capacitor for Normally Off Application

IEEE Journal of the Electron Devices Society, 2018
In order to realize ultralow power Internet-of-Things (IoT) edge devices, standby leakage current must be suppressed because activity of IoT device is very small in an intermittent mode.
Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, Toshiro Hiramoto   +3 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Spin currents and torques in ferromagnetic systems with strong interfacial spin-orbit coupling

Scientific Reports
A three-dimensional description of spin-dependent current transport across nonmagnetic/ferromagnetic interfaces with strong interfacial spin-orbit coupling is presented.
Nils Petter Jørstad, Bernhard Pruckner, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +4 more
doaj   +1 more source