Results 31 to 40 of about 1,753,751 (305)

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

Advanced Science, 2017
Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐
Wen Li, Fengning Guo, Haifeng Ling, Peng Zhang, Mingdong Yi, Laiyuan Wang, Dequn Wu, Linghai Xie, Wei Huang   +8 more
doaj   +1 more source

Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO₂ Capacitor for Normally Off Application

IEEE Journal of the Electron Devices Society, 2018
In order to realize ultralow power Internet-of-Things (IoT) edge devices, standby leakage current must be suppressed because activity of IoT device is very small in an intermittent mode.
Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, Toshiro Hiramoto   +3 more
doaj   +1 more source

All-nanocellulose nonvolatile resistive memory [PDF]

Celano, U., Nagashima, K., Koga, H. et al. All-nanocellulose nonvolatile resistive memory. NPG Asia Mater 8, e310 (2016). https://doi.org/10.1038/am.2016.144.Single-use disposable nonvolatile memory devices hold promise for novel applications in internet
Koga, Hirotaka, Nogi, Masaya, Jurczak, Malgorzata, Vandervorst, Wilfried, Nagashima, Kazuki, Zhuge, Fuwei, Celano, Umberto, Meng, Gang, He, Yong, Boeck, Jo De, Yanagida, Takeshi   +10 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Spin currents and torques in ferromagnetic systems with strong interfacial spin-orbit coupling

Scientific Reports
A three-dimensional description of spin-dependent current transport across nonmagnetic/ferromagnetic interfaces with strong interfacial spin-orbit coupling is presented.
Nils Petter Jørstad, Bernhard Pruckner, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +4 more
doaj   +1 more source

Nonvolatile electrical switching of optical and valleytronic properties of interlayer excitons

Light: Science & Applications, 2022
Long-lived interlayer excitons (IXs) in van der Waals heterostructures (HSs) stacked by monolayer transition metal dichalcogenides (TMDs) carry valley-polarized information and thus could find promising applications in valleytronic devices.
Tong Ye, Yongzhuo Li, Junze Li, Hongzhi Shen, Junwen Ren, Cun-Zheng Ning, Dehui Li   +6 more
doaj   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Organic nonvolatile memory devices based on ferroelectricity [PDF]

, 2010
A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology.
Blom, P.W.M., Naber, R.C.G., Leeuw, D.M. de, Asadi, K., Boer, B. de   +4 more
core   +3 more sources

Bio‐Derived Polyelectrolyte Additive–Induced Interfacial Ion‐Diffusion Barriers for Nonvolatile Organic Artificial Synapses

Advanced Functional Materials, EarlyView.
Sodium alginate regulates interfacial ion transport and retention in electrolyte‐gated synaptic transistors. The carboxylate‐rich polymeric network forms a dynamic interfacial ion‐diffusion barrier that facilitates ion injection during programming while suppressing ion back‐diffusion, thereby stabilizing the electrochemically doped channel state.
Chaeyeon Han, Donghwa Lee, Hyeonse Kim, Hyoik Jang, Sein Chung, Geun Yeol Bae, Eunho Lee   +6 more
wiley   +1 more source

Editorial for the Topic on Magnetic Materials and Devices

Micromachines
Magnets are materials that are characterized by their own persistent magnetic moments [...]
Viktor Sverdlov
doaj   +1 more source