Results 51 to 60 of about 1,753,751 (305)

Suspended Gate Silicon Nanodots memory

, 2008
This paper proposes a new non-volatile semiconductor memory which features a suspended gate integrated with silicon nanocrystals dots as a floating gate and the MOSFET as a readout. Performing three-dimensional finite element simulations combined with an
Mizuta, Hiroshi, Garcia-Ramirez, Mario A., Yoshimura, Hideo, Tsuchiya, Yoshishige   +3 more
core   +1 more source

Flash-memories in Space Applications: Trends and Challenges [PDF]

, 2009
Nowadays space applications are provided with a processing power absolutely overcoming the one available just a few years ago. Typical mission-critical space system applications include also the issue of solid-state recorder(s).
Caramia, M., Caramia M., Fabiano, Michele, Prinetto, Paolo Ernesto, Di Carlo, Stefano   +4 more
core  

Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors

Advanced Functional Materials, EarlyView.
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang, Mu‐Pai Lee, Jhen‐Dong Tsai, Liang‐Ying Hsieh, Jui‐Yuan Chen, Chun‐Wei Huang, Yen‐Fu Lin, Wen‐Wei Wu   +7 more
wiley   +1 more source

In‐Memory Mathematical Operations with Spin‐Orbit Torque Devices

Advanced Science, 2022
Analog arithmetic operations are the most fundamental mathematical operations used in image and signal processing as well as artificial intelligence (AI).  In‐memory computing (IMC) offers a high performance and energy‐efficient computing paradigm.
Ruofan Li, Min Song, Zhe Guo, Shihao Li, Wei Duan, Shuai Zhang, Yufeng Tian, Zhenjiang Chen, Yi Bao, Jinsong Cui, Yan Xu, Yaoyuan Wang, Wei Tong, Zhe Yuan, Yan Cui, Li Xi, Dan Feng, Xiaofei Yang, Xuecheng Zou, Jeongmin Hong, Long You   +20 more
doaj   +1 more source

The Shuttle Nanoelectromechanical Nonvolatile Memory [PDF]

IEEE Transactions on Electron Devices, 2012
Nonvolatile memory (NVM) devices based on storage layers, p-n junctions and transistors, such as FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling. This paper presents the structure, operation, and modeling of a nanoelectromechanical NVM based on the switching of a free electrode between two stable ...
Pott, Vincent, Chua, Geng Li, Vaddi, Ramesh, Tsai, Julius Ming-Lin, Kim, Tony Tae-Hyoung   +4 more
openaire   +2 more sources

ELECTRICAL CHARACTERIZATION, PHYSICS, MODELING AND RELIABILITY OF INNOVATIVE NON-VOLATILE MEMORIES [PDF]

, 2012
Enclosed in this thesis work it can be found the results of a three years long research activity performed during the XXIV-th cycle of the Ph.D. school in Engineering Science of the Università degli Studi di Ferrara. The topic of this work is concerned
Zambelli, Cristian
core  

Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

Advanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies, Bin Han, Paolo Samorì   +2 more
wiley   +1 more source

Coexisting Volatile and Nonvolatile Switching in 3D ALD-IGZO Vertical RRAM for Fully Hardware-Based Wide Reservoir Computing. [PDF]

Adv Sci (Weinh)
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Lee S, Park J, Kim N, Ju S, Jang SC, Kim HS, Kim S.   +6 more
europepmc   +2 more sources

Nonvolatile memories

, 2018
The need for faster, smaller, cheaper and energy-efficient electronic devices has been growing continuously in the last decade, with the conventional data storage technologies (i.e., static random access memory and dynamic random access memory), which have been so far fulfilled by CMOS-charge storage-based circuits, approaching their fundamental limits,
Rocha, Leandro S.R., Simões, Alexandre Z., Cortés, Johan A., Ramirez, Miguel A., Moura, Francisco, Foschini, Cesar R., Tararam, Ronald, Cilense, Mario, Longo, Elson, Paiva-Santos, Carlos O.   +9 more
openaire   +2 more sources

Hybrid Ferroelectric Tunnel Junctions with Intrinsic Nonlinearity and Self‐Rectification via Interfacial Reconstruction

Advanced Functional Materials, EarlyView.
Rapid thermal annealing reconstructs the BCFO/Nb:STO interface into an atomically thin reconstructed interfacial layer, which reshapes the tunneling barrier and converts a high‐TER ferroelectric tunnel junction into an intrinsically nonlinear, self‐rectifying device.
Hojin Lee, Joonbong Lee, Jinho Byun, Sang‐Hyeok Yang, A young Cho, Sangwoo Lee, Dae Haa Ryu, Hyunbin Chung, Hee Seo Yun, Moon Seop Choi, Yesul Choi, Sungkyun Park, Min‐Hyung Jung, Dongwon Lee, Yoon‐Uk Heo, Hu Young Jeong, Hongseok Kim, Shinhyeong Lee, Yunseok Kim, Young‐Min Kim, Jaekwang Lee, Taekjib Choi   +21 more
wiley   +1 more source