Results 51 to 60 of about 8,490 (292)

Suspended Gate Silicon Nanodots memory [PDF]

, 2008
This paper proposes a new non-volatile semiconductor memory which features a suspended gate integrated with silicon nanocrystals dots as a floating gate and the MOSFET as a readout. Performing three-dimensional finite element simulations combined with an
Mizuta, Hiroshi, Garcia-Ramirez, Mario A., Yoshimura, Hideo, Tsuchiya, Yoshishige   +3 more
core  

All-nanocellulose nonvolatile resistive memory [PDF]

Celano, U., Nagashima, K., Koga, H. et al. All-nanocellulose nonvolatile resistive memory. NPG Asia Mater 8, e310 (2016). https://doi.org/10.1038/am.2016.144.Single-use disposable nonvolatile memory devices hold promise for novel applications in internet
Koga, Hirotaka, Nogi, Masaya, Jurczak, Malgorzata, Vandervorst, Wilfried, Nagashima, Kazuki, Zhuge, Fuwei, Celano, Umberto, Meng, Gang, He, Yong, Boeck, Jo De, Yanagida, Takeshi   +10 more
core   +1 more source

Editorial for the Topic on Magnetic Materials and Devices

Micromachines
Magnets are materials that are characterized by their own persistent magnetic moments [...]
Viktor Sverdlov
doaj   +1 more source

A Reliable and Energy-Efficient Nonvolatile Ternary Memory Based on Hybrid FinFET/RRAM Technology

IEEE Access, 2022
With the successful development of information technology, particularly in big data and neural network scopes, the appetency for denser memory compositions has exponentially outreached.
Aram Yousefi, Nima Eslami, Mohammad Hossein Moaiyeri   +2 more
doaj   +1 more source

Spectrally Selective Bipolar Self‐Powered Opto‐Synaptic Responses in Tandem 2D van Der Waals Ferroelectric Heterojunctions

Advanced Functional Materials, EarlyView.
Tandem 2D vdW ferroelectric heterojunctions enable spectrally selective, self‐powered bipolar opto‐synaptic responses for retinal ON/OFF bipolar cell emulation and wavelength‐programmable logic operations. This work establishes vdW ferroelectric heterojunctions as a compelling materials platform for energy‐efficient, adaptive, and human‐like artificial
Rajiv Kumar Pandey, Chang Yong Park, Cheolhwa Jang, Taeho Kang, Sungjoo Lee   +4 more
wiley   +1 more source

ELECTRICAL CHARACTERIZATION, PHYSICS, MODELING AND RELIABILITY OF INNOVATIVE NON-VOLATILE MEMORIES [PDF]

, 2012
Enclosed in this thesis work it can be found the results of a three years long research activity performed during the XXIV-th cycle of the Ph.D. school in Engineering Science of the Università degli Studi di Ferrara. The topic of this work is concerned
Zambelli, Cristian
core  

Hybrid flexible resistive random access memory-gated transistor for novel nonvolatile data storage [PDF]

, 2016
Here, a single‐device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch ...
Sun, Qijun, Zhuang, Jiaqing, Han, Su-Ting, Zhou, Li, Zhou, Ye, Zhang, Hua, Yan, Yan, Chen, Bo, Wang, Chundong, Roy, Vellaisamy A.L.   +9 more
core   +1 more source

Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling

Micromachines
In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the spin drift–diffusion model to address the back-hopping effect. This issue manifests as unwanted switching either in the composite free layer or in the reference layer in ...
Mario Bendra, Roberto Lacerda de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov   +4 more
doaj   +1 more source

Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructures

Journal of Materiomics, 2018
We prepared 300-nm GeTe thin films on (111)-oriented and piezoelectrically active 0.71 Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29 PT) single-crystal substrates by the pulsed laser deposition and investigated the effects of in situ electric-field-controllable ...
Zhi-Xue Xu, Jian-Min Yan, Meng Xu, Ting-Wei Chen, Lei Guo, Guan-Yin Gao, Xiao-Guang Li, Hao-Su Luo, Yu Wang, Ren-Kui Zheng   +9 more
doaj   +1 more source

Performance Enhancement of Tin Chloride‐Incorporated Ferroelectric Polymer‐Based Artificial Synapse for Hardware Neural Networks

Advanced Functional Materials, EarlyView.
This paper proposes a highly efficient ferroelectric artificial synapse device based on an oxide semiconductor and SnCl2‐inserted P(VDF‐TrFE) gate dielectric layer. This FeFET significantly improved the synaptic performance due to the ion‐dipole interaction.
Hyun‐Soo Kim, Hyunkyu Lee, Yeonho Choi, Won Young Jang, Hyungmin Kim, Krishna Moorthy Ponnusamy, Hongseung Lee, Jaewook Yoo, Ji Ye Lee, S. Chandramohan, Seongin Hong, Hagyoul Bae, Hyeon‐Sik Jang, Sang Yeol Lee, Keun Heo   +14 more
wiley   +1 more source