Results 51 to 60 of about 8,462 (295)

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

Memristor-Based Nonvolatile Random Access Memory: Hybrid Architecture for Low Power Compact Memory Design

IEEE Access, 2013
In this paper, a new approach toward the design of a memristor based nonvolatile static random-access memory (SRAM) cell using a combination of memristor and metal-oxide semiconductor devices is proposed. Memristor and MOSFETs of the Taiwan Semiconductor
Syed Shakib Sarwar, Syed An Nazmus Saqueb, Farhan Quaiyum, A. B. M. Harun-Ur Rashid   +3 more
doaj   +1 more source

Forming-free bipolar and unipolar resistive switching behaviors with low operating voltage in Ag/Ti/CeO2/Pt devices

Results in Physics, 2020
Resistive switching devices are promising candidates to replace today’s nonvolatile memory device, and find applications in neuromorphic computing. In this study, bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors at room ...
Wenqing Wang, Baolin Zhang, Hongbin Zhao
doaj   +1 more source

Nonvolatile dynamic memories [PDF]

2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716), 2004
This paper demonstrates that electronically passivated Si-SiO/sub 2/ interface enables the development of nonvolatile dynamic memories. Experimental results on charge-retention times are presented to illustrate that the Si DRAMs would become nonvolatile memories if implemented into SiC.
openaire   +1 more source

Nonvolatile read-out molecular memory [PDF]

Proceedings of the National Academy of Sciences, 2003
A versatile molecule is described that performs as a nondestructible read-out optical-storage molecular memory. This molecular memory is composed of two distinct molecules that are chemically bonded to each other to form a single molecule with unique properties.
Y C, Liang, A S, Dvornikov, P M, Rentzepis   +2 more
openaire   +2 more sources

Organic Nonvolatile Memory Devices Based on Ferroelectricity [PDF]

, 2010
A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology.
Blom, P.W.M., Naber, Ronald C. G., Dago M. de Leeuw, Naber, Ronald C.G.,, Asadi, Kamal, Ronald C. G. Naber, Asadi, Kamal,, Boer, Bert de,, Blom, Paul W. M., de Leeuw, Dago M., Asadi, K., Bert de Boer, Naber, R.C.G., Leeuw, Dago M. de,, de Boer, Bert, Kamal Asadi, Paul W. M. Blom, Blom, Paul W.M.,, Leeuw, D.M. de, Boer, B. de   +19 more
core   +1 more source

Ferroelectric deep trench capacitors based on Al:HfO2 for 3D nonvolatile memory applications

, 2022
4 S.Aiming for future nonvolatile memory applications the fabrication and electrical characterization of 3-dimensional trench capacitors based on ferroelectric HfO2 is reported.
Müller, Johannes, Sundqvist, Jonas, Seidel, Konrad, Weinreich, Wenke, Riedel, Stefan, Polakowski, Patrick, Rudolf, M.   +6 more
core   +1 more source

Backbone‐Controlled Ion‐Side Chain Accessibility in Conjugated Polymers for Organic Electrochemical Synaptic Transistors

Advanced Functional Materials, EarlyView.
Backbone modulation in glycolated conjugated polymers governs ion accessibility to side chains, strengthes anion adsorption, and suppresses back‐diffusion. As the number of thiophene units increases, structural reorganization, retention, and synaptic plasticity are enhanced, leading to improved neuromorphic performance in electrolyte‐gated organic ...
Junho Sung, Sein Chung, Byeongjun Jeon, Donghwa Lee, Myungjin An, Jiyeong Shin, Yoohyeon Jang, Donghoo Won, Changduk Yang, Bumjoon Seo, Eunho Lee   +10 more
wiley   +1 more source

Electro‐Steric Ion Confinement in Polyelectrolyte Networks for Robust Nonvolatile Artificial Synapse

Advanced Functional Materials, EarlyView.
Polyelectrolyte stoichiometry governs ion transport and retention in electrolyte‐gated synaptic transistors. A PSS‐rich network creates electro‐steric ion confinement that suppresses ion back‐diffusion and stabilizes channel doping, enabling robust nonvolatile synaptic memory, linear weight updates, and low‐energy operation.
Donghwa Lee, Jinbo Kim, Myeongjin An, Jisoo Park, Junho Sung, Eunsung Hwang, Suhwan Seok, Seong‐Min Bak, Jeonghun Kim, Eunho Lee   +9 more
wiley   +1 more source

Oxidized MoS2‐Based Multifunctional Memristive Hardware for Energy‐Efficient mmWave Signal Processing and In‐Memory Matrix Multiplication

Advanced Functional Materials, EarlyView.
Thermally oxidized MoS2‐based radio‐frequency switches enable a multifunctional platform that unifies broadband RF switching and in‐memory computation. The device achieves a cutoff frequency of 33.2 THz with high energy efficiency and supports hardware‐aware signal processing.
Juho Son, Changwoo Pyo, Sungmoon Park, Yoongi Cho, Seungchan Lee, Myungsoo Kim   +5 more
wiley   +1 more source