Results 71 to 80 of about 8,490 (292)

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Imprint Control of Nonvolatile Shape Memory with Asymmetric Ferroelectric Multilayers [PDF]

, 2016
Imprint Control of Nonvolatile Shape Memory with Asymmetric Ferroelectric ...
Young-Han Shin (1700146), Jong Yeog Son (1700149), Woo-Hee Kim (1700152), Hyun Myung Jang (1487470)   +3 more
core   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Stable Resistive Switching in ZnO/PVA:MoS₂ Bilayer Memristor

Nanomaterials, 2022
Reliability of nonvolatile resistive switching devices is the key point for practical applications of next-generation nonvolatile memories. Nowadays, nanostructured organic/inorganic heterojunction composites have gained wide attention due to their ...
Tangyou Sun, Hui Shi, Shuai Gao, Zhiping Zhou, Zhiqiang Yu, Wenjing Guo, Haiou Li, Fabi Zhang, Zhimou Xu, Xiaowen Zhang   +9 more
doaj   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Optoelectronic Nanofluidic Neural Networks for Ionic Computing

Advanced Materials, EarlyView.
An ion‐based optoelectronic nanofluidic memristor enables neuromorphic computing in aqueous environments. With tunable ionic memory and multimodal synaptic plasticity, it realizes densely connected ionic neural networks capable of image classification, motion prediction, logic computation, and real‐time in‐sensor computing, advancing fully connected ...
Yaxin Huang, Zhiyuan Du, Changjin Wu, Binglin Zeng, Yingnan Cao, Mingliang Li, Liren Zhang, Qingxin Guo, Chao Huang, Can Li, Jinyao Tang   +10 more
wiley   +1 more source

2K nonvolatile shadow RAM and 265K EEPROM SONOS nonvolatile memory development [PDF]

, 1998
This paper describes Silicon Oxide Nitride Oxide Semiconductor (SONOS) nonvolatile memory development at Sandia National Laboratories. A 256K EEPROM nonvolatile memory and a 2K nonvolatile shadow RAM are under development using an n-channel SONOS memory ...
Habermehl, S. D., Mahl, P. R., Murray, J. R., Knoll, M. G., Rodriguez, J. L., Bennett, R. S., Tafoya-Porras, B. C., Jones, R. V., Nasby, R. D.   +8 more
core  

Reconfigurable Ferroelectric‐Like Two‐Dimensional Electron Gas at Room Temperature

Advanced Materials, EarlyView.
We demonstrate the realization of a novel ferroelectric‐like two‐dimensional electron gas (2DEG) based on the epitaxial interface between SrO‐terminate SrTiO3 and ferroeletric KNb0.5Na0.5O3${\rm KNb}_{0.5}{\rm Na}_{0.5}{\rm O}_3$ thin films. We show nonvolatile control of the transport properties enabling spatially reconfigurable devices in which ...
Martando Rath, Yu Chen, Daniela Stornaiuolo, Aravind Raji, Alexandre Gloter, Antonio Cassinese, Andrea Rubano, Alessia Sambri, Domenico Paparo, Emiliano Di Gennaro, Jérôme Lecourt, Wilfrid Prellier, Francesco Rosa, Nicholas B. Brookes, Giacomo Ghiringhelli, Daniele Preziosi, Marco Salluzzo   +16 more
wiley   +1 more source

Controlled Nonvolatile Transition in Polyoxometalates‐Graphene Oxide Hybrid Memristive Devices [PDF]

, 2019
Graphene oxide (GO)-based nonvolatile memory has triggered tremendous interest owing to its high mechanical flexibility, high optical transparency, low cost fabrication, and environmental friendly manufacture for future flexible and transparent ...
Ding, Guanglong, Shi‐Rui Zhang, Jingyi Pan, Vellaisamy A. L. Roy, Zhang, Chen, Zhou, Kui, Pan, Jingyi, Xin Zhu, Xiaoli Chen, Pu Huang, Guanglong Ding, Su‐Ting Han, Chen Zhang, Han, Su-Ting, Zhou, Ye, Zhu, Xin, Ye Zhou, Zhang, Shi-Rui, Huang, Pu, Roy, Vellaisamy A. L., Chen, Xiaoli, Kui Zhou   +21 more
core   +1 more source

Charge‐Encoded Sidechains Enable Deterministic Ion Ingress and Memory Retention in Organic Electrochemical Synaptic Transistors

Advanced Materials, EarlyView.
Organic electrochemical synaptic transistors based on sidechain‐engineered conjugated polyelectrolytes reveal that cationic sidechains enable efficient volumetric ion penetration and dense backbone doping, leading to enhanced transconductance and long‐term synaptic retention.
Haim Kwon, Jihyeon You, Chaeyeon Park, Dong Gue Roe, Ji Hyun Jung, Jeong Ho Cho, Han Young Woo   +6 more
wiley   +1 more source