Results 71 to 80 of about 1,753,751 (305)
Advanced Materials, EarlyView.The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
Plate : persistent memory management for nonvolatile main memory
Over the past few years, nonvolatile memory has actively been researched and developed. Therefore, studying operating system (OS) designs predicated on the main memory in the form of a nonvolatile memory and studying methods to manage persistent data in ...
Goto, Masataka +7 more
core +1 more source
Nonvolatile memory devices based on self-assembled nanocrystals
, 2018 Nonvolatile memory devices are one of the most important components in modern electronic devices. Many efforts have been made to fabricate high-density, low-cost, nonvolatile solid-state memory devices for use in portable/mobile electronic devices such ...
Lee, JS
core +1 more source
Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities
Advanced Materials, EarlyView.This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen +7 more
wiley +1 more source
EasiLIR: Lightweight Incremental Reprogramming for Sensor Networks
International Journal of Distributed Sensor Networks, 2014 Energy-efficient wireless reprogramming is key issues for long-lived sensor network. Most of wireless reprogramming approaches focus on the energy efficiency of the data transmission phase. However, the program rebuilding phase on target node is possibly
Jiefan Qiu, Dong Li, Hailong Shi, Li Cui
doaj +1 more source
Advanced Materials, EarlyView.Memristors offer tunable resistance and intrinsic instability, making them promising tunable noise sources. We propose a spiking‐rate‐programmable probabilistic neuron using a Ru/TaOx/Pt memristor, where resistance‐dependent noise enables frequency‐selective encoding.
Do Hoon Kim +8 more
wiley +1 more source
Monolayer MoS2-based nonvolatile transistors with a titanium nitride in the gate
AIP Advances, 2019 Low-power, nonvolatile transistors are demanded in the digital electronics development. In our work, molybdenum disulfide (MoS2) acts as the channel material integrated with TiN, which is used as a floating gate to build a floating gate transistor.
Kailiang Huang +7 more
doaj +1 more source
Advanced Electronic Materials, 2020 In the field of memory and spin‐logical devices, multiferroics have the potentials of low‐energy informational operation. A novel memory and logic device in a PbZr0.2Ti0.8O3/Co/Pt (PZT/Co/Pt) multiferroic heterostructure with perpendicular magnetic ...
Zengyao Ren +10 more
doaj +1 more source
Nonvolatile-Memory Characteristics of AlO--Implanted AI2O3
, 2009 The nonvolatile-memory (NVM) characteristics of AIO- -implanted Al2O3structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention.
Robert Elliman (20007516) +5 more
core
Direct Growth of 2D Bilayers on Au(111) for Low‐Coercive Sliding Ferroelectricity
Advanced Materials, EarlyView.Controlled CVD growth of stacking‐defined bilayer ReS2 on Au(111) enables parallel‐stacked bilayers with intrinsic sliding ferroelectricity, a strong piezoelectric response, and an ultralow coercive voltage. Atomic‐resolution imaging and in situ measurements further reveal the decisive role of clean interfaces in achieving low‐barrier ferroelectric ...
Honglin Chen +7 more
wiley +1 more source