Results 71 to 80 of about 1,732,535 (211)

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Nanoscale Research Letters, 2017
In this work, high-k composite TiAlO film has been investigated as charge-trapping material for nonvolatile memory applications. The annealing formed Al2O3-TiAlO-SiO2 dielectric stack demonstrates significant memory effects and excellent reliability ...
Wenchao Xu, Yang Zhang, Zhenjie Tang, Zhengjie Shao, Guofu Zhou, Minghui Qin, Min Zeng, Sujuan Wu, Zhang Zhang, Jinwei Gao, Xubing Lu, Junming Liu   +11 more
doaj   +1 more source

Hybrid Volatile/Nonvolatile Resistive Switching Memory in Ternary Metal Oxide Enabling Hopfield Neural Classification

Processing data demands volatile memory, whereas storage necessitates nonvolatile devices. Typically, during the operations, data moves back and forth between them, causing an increase in energy consumption, undesired heating, and von Neumann bottleneck.
Hyungtak Seo (1502104), Mohit Kumar (399134), Seung-Ik Han (14600493), SeokWon Lim (14600496)   +3 more
core   +1 more source

On Error Correction for Nonvolatile Processing-In-Memory [PDF]

Processing in memory (PiM) represents a promising computing paradigm to enhance performance of numerous data-intensive applications. Variants performing computing directly in emerging nonvolatile memories can deliver very high energy efficiency.
Karpuzcu, Ulya R., Cılasun, Hüsrev, Zabihi, Masoud, Chowdhury, Zamshed I., Lv, Yang, Resch, Salonik, Zink, Brandon, Wang, Jian-Ping, Sapatnekar, Sachin S.   +8 more
core   +1 more source

Bistable electrical switching and nonvolatile memory effects by doping different amounts of GO in poly(9,9-dioctylfluorene-2,7-diyl)

, 2018
The device shows different conductive behavior: electric bistable nonvolatile flash memory behavior and conductor behavior.
Ying Xin, Cheng Wang, Xiankai Jiang, Xiaofeng Zhao, Rongrong Zheng, Yanjun Hou, Qun Yang, Jiahe Huang, Shuhong Wang   +8 more
core   +1 more source

Skyrmion-mediated nonvolatile ternary memory

Scientific Reports
Multistate memory systems have the ability to store and process more data in the same physical space as binary memory systems, making them a potential alternative to existing binary memory systems.
Md Mahadi Rajib, Namita Bindal, Ravish Kumar Raj, Brajesh Kumar Kaushik, Jayasimha Atulasimha   +4 more
doaj   +1 more source

Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer

Scientific Reports, 2017
Nonvolatile ternary memory devices were fabricated using the composite of polystyrene (PS) and graphene oxide(GO) as active layers, which have an reliable intermediate state.
Yanmei Sun, Dianzhong Wen, Xuduo Bai, Junguo Lu, Chunpeng Ai   +4 more
doaj   +1 more source

A multilevel nonvolatile magnetoelectric memory

Scientific Reports, 2016
AbstractThe coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade.
Jianxin Shen, Junzhuang Cong, Dashan Shang, Yisheng Chai, Shipeng Shen, Kun Zhai, Young Sun   +6 more
openaire   +2 more sources

Melting-free integrated photonic memory with layered polymorphs

Nanophotonics
Chalcogenide-based nonvolatile phase change materials (PCMs) have a long history of usage, from bulk disk memory to all-optic neuromorphic computing circuits.
Ullah Kaleem, Li Qiu, Li Tiantian, Gu Tingyi   +3 more
doaj   +1 more source

Polymer and organic nonvolatile memory devices

, 2011
Organic molecules and semiconductors have been proposed as active part of a large variety of nonvolatile memory devices, including resistors, diodes and transistors. In this review, we focus on electrically reprogrammable nonvolatile memories.
Noh, Y.Y., Heremans, P., Müller, R., Kim, D.Y., Gelinck, G.H., Baeg, K.J.   +5 more
core  

Investigation of the Electrical Coupling Effect for Monolithic 3-Dimensional Nonvolatile Memory Consisting of a Feedback Field-Effect Transistor Using TCAD. [PDF]

Micromachines (Basel), 2023
Oh JH, Yu YS.
europepmc   +1 more source