Results 91 to 100 of about 8,462 (295)

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Room‐Temperature Nonvolatile Molecular Memory Based on Partially Unzipped Nanotube

, 2022
Nonvolatile memories have attracted a lot of interest because they retain the data when the power is interrupted. Smaller size and improved performance of nonvolatile memories are pursued both for basic research and applications.
Sun, Liangfeng, Wang, Zhongpu, Jin, Jiyou, Chu, Weiguo, Zhisheng Peng, Peng, Kang, Zhang, Jian, Ya Deng, Zhongpu Wang, Zheng Liu, Yong Jun Li, Li, Yong Jun, Kang Peng, Haonan Wei, Hui Liu, Deng, Ya, Lianfeng Sun, Jiyou Jin, Wei, Haonan, Weiguo Chu, Jian Zhang, Peng, Zhisheng, Liu, Hui, Liu, Zheng   +23 more
core   +1 more source

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

Advanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo, Seokjin Oh, Minah Park, Jong Min Song, Hongseung Lee, Seohyeon Park, Sojin Jung, Seongbin Lim, Soohyun Lim, Dongsun Shin, Ji Won Heo, TaeWan Kim, Hagyoul Bae   +12 more
wiley   +1 more source

Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer

Scientific Reports, 2017
Nonvolatile ternary memory devices were fabricated using the composite of polystyrene (PS) and graphene oxide(GO) as active layers, which have an reliable intermediate state.
Yanmei Sun, Dianzhong Wen, Xuduo Bai, Junguo Lu, Chunpeng Ai   +4 more
doaj   +1 more source

Imprint Control of Nonvolatile Shape Memory with Asymmetric Ferroelectric Multilayers

, 2016
Imprint Control of Nonvolatile Shape Memory with Asymmetric Ferroelectric ...
Young-Han Shin (1700146), Jong Yeog Son (1700149), Woo-Hee Kim (1700152), Hyun Myung Jang (1487470)   +3 more
core   +1 more source

Interlayer‐Sliding‐Enabled Multiferroicity and Giant Switchable Anomalous Hall Conductivity in RuO2Zn2F2 Bilayer

Advanced Science, EarlyView.
Interlayer sliding in the RuO2Zn2F2 bilayer induces ferroelectricity and enables reversible valley polarization switching. The electric dipole and valley‐resolved band edges are intimately coupled, revealing sliding ferroelectricity as a powerful mechanism for electrical control of valley degrees of freedom in 2D materials.
Djamel Bezzerga, Imran Khan, Ganie Suhail Ahmad, Jisang Hong   +3 more
wiley   +1 more source

WS2 Optoelectronic Memristive Reservoir Enabling Ultra‐Low‐Power, Multi‐Task, and Environmentally Stable Neuromorphic Computing

Advanced Science, EarlyView.
WS2‐based in‐memory sensing reservoir computing integrates sensing, memory, and computation in one compact device. It achieves ∼94% N‐MNIST, ∼93% eye motion perception, and ∼89% speech recognition with ultra‐low energy (∼25.5 fJ/spike). The system shows stability at 95% humidity, endurance over 1.5M cycles, and supports synaptic plasticity, enabling ...
Dayanand Kumar, Hanrui Li, Divyanshu Divyanshu, Dhananjay D. Kumbhar, Manoj Kumar Rajbhar, Amit Singh, Abdul Momin Syed, Selma Amara, Gianluca Setti, Nazek El‐Atab   +9 more
wiley   +1 more source

High‐Performance Flexible Organic Nonvolatile Memories with Outstanding Stability Using Nickel Oxide Nanofloating Gate and Polymer Electret

Advanced Electronic Materials, 2020
Organic nonvolatile memory devices based on organic field‐effect transistors (OFETs) have attracted attention as promising memory components in flexible organic integrated circuits.
Yeon‐Ju Kim, Minji Kang, Min‐Hye Lee, Ji‐Sue Kang, Dong‐Yu Kim   +4 more
doaj   +1 more source

Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing

Advanced Science, EarlyView.
A triple‐mode ferroelectric thin‐film transistor is developed by integrating Si3N4/HZO/IGZO layers to realize three independent memory modes: electric long‐term, electric short‐term, and optical short‐term. This single‐device architecture functions as both a reservoir and readout layer, achieving 92.43% MNIST accuracy. It offers a fully hardware‐based,
Hyeonho Lee, Seungjun Lee, Tae‐Hyeon Kim, Yonghee Jeong, Gwangmin An, Minsu Ko, Junsu Yu, Heung Soo Kim, Yang Chai, Sungjun Kim   +9 more
wiley   +1 more source

Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films [PDF]

, 2014
With the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for
Fortunati, Elena, Kenny, José María, VALENTINI, LUCA, Cardinali, M., E. Fortunati, Valentini, L., CARDINALI, MARTA, M. Cardinali, J. M. Kenny, L. Valentini   +9 more
core   +1 more source