Artificial electrical dipole in polymer multilayers for nonvolatile thin film transistor memory
In this letter, an organic nonvolatile thin film transistor (TFT) memory on a plastic substrate is reported. The cross-linked poly-4-vinyl phenol (PVP) is used as a polymer dielectric layer in the form of a triple layer structure to achieve the memory ...
裴靜偉 +3 more
core +1 more source
High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications. [PDF]
Sung JY +5 more
europepmc +1 more source
Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO2/Al2O3-Based Charge Trapping Layers. [PDF]
Spassov D +7 more
europepmc +1 more source
SONOS Nonvolatile Memory Cell Programming Characteristics [PDF]
Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model.
Phillips, Thomas A. +2 more
core
Current Status of Nonvolatile Semiconductor Memory Technology
In this report, an overview of the current status of nonvolatile semiconductor memory technology is presented. We are reaching the integration limit of flash memories, and many new types of memories to replace conventional flash memories have been ...
Yoshihisa Fujisaki
core +1 more source
Suspended Gate Silicon Nanodots memory
This paper proposes a new non-volatile semiconductor memory which features a suspended gate integrated with silicon nanocrystals dots as a floating gate and the MOSFET as a readout. Performing three-dimensional finite element simulations combined with an
Mizuta, Hiroshi +3 more
core +1 more source
High-Quality Single-Crystalline β-Ga2O3 Nanowires: Synthesis to Nonvolatile Memory Applications. [PDF]
Sivakumar C +5 more
europepmc +1 more source
Nonvolatile Analog Memory [PDF]
A nonvolatile analog memory uses pairs of ferroelectric field effect transistors (FFETs). Each pair is defined by a first FFET and a second FFET. When an analog value is to be stored in one of the pairs, the first FFET has a saturation voltage applied ...
MacLeod, Todd C.
core
Piezopotential-Programmed Multilevel Nonvolatile Memory As Triggered by Mechanical Stimuli
We report the development of a piezopotential-programmed nonvolatile memory array using a combination of ion gel-gated field-effect transistors (FETs) and piezoelectric nanogenerators (NGs).
Qijun Sun (1498954) +6 more
core +1 more source
Serial nonvolatile 1024 bit MNOS memory
The characteristics and operation of a nonvolatile MNOS sequential memory designed and built by Sandia National Laboratories for DOD are described. First, a general description and block diagram are presented, followed by the power, voltage, clock and ...
Dodson, W. H., Sokel, R. J.
core

