Results 91 to 100 of about 8,490 (292)
Monolayer MoS2-based nonvolatile transistors with a titanium nitride in the gate
AIP Advances, 2019 Low-power, nonvolatile transistors are demanded in the digital electronics development. In our work, molybdenum disulfide (MoS2) acts as the channel material integrated with TiN, which is used as a floating gate to build a floating gate transistor.
Kailiang Huang +7 more
doaj +1 more source
Reliable Nonvolatile Memories: Techniques and Measures
IEEE Design & Test, 2017 Editor’s note: Reliability continues to be a severe challenge in the development of emerging memories. In this article, the authors offer a comprehensive survey of reliability enhancement techniques for three mainstream emerging memories and a summary of the possible future research directions in this area.
Shivam Swami, Kartik Mohanram
openaire +1 more source
Advanced Science, EarlyView.In this work, ultrafast laser‐induced spin transfer and spin relaxation dynamics in 2D van der Waals antiferromagnetic CrI3/CrGeTe3 heterostructures are investigated. Laser excitation is demonstrated to induce pronounced interlayer nonequilibrium spin dynamics and ultrafast magnetic moment reconstruction, driving a transition from an antiferromagnetic (
Yang Wu +5 more
wiley +1 more source
Concurrency implications of nonvolatile byte-addressable memory [PDF]
, 2018 Thesis (Ph. D.)--University of Rochester. Department Computer Science, 2018.In the near future, storage technology advances are expected to provide nonvolatile byte addressable memory (NVM) for general purpose computing.
Scott, Michael L. (1959 - ) +1 more
core
Advanced Science, EarlyView.Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami +5 more
wiley +1 more source
Sericin for resistance switching device with multilevel nonvolatile memory [PDF]
, 2013 Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a ...
Li, Yuangang +8 more
core +1 more source
Two‐Dimensional Triferroics: From Fundamental Couplings to Multifunctional Applications
Advanced Science, EarlyView.This graphic summarizes the three main types of currently reported 2D triferroic couplings. From the structural perspective, existing systems can be broadly classified into two categories, which exhibit distinct symmetry features and coupling behaviors. Beyond the lattice difference, a third type involves the interplay among ferroelectricity, magnetism,
Yang Li, Jialin Gong, Zhiqing Li
wiley +1 more source
An Embedded Ultra Low Power Nonvolatile Memory in a Standard CMOS Logic Process [PDF]
, 2008 This paper proposes an embedded ultra low power nonvolatile memory in a standard CMOS logic process. The memory adopts a bit cell based on the differential floating gate PMOS structure and a novel operating scheme.
Li, YL, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100864, Peoples R China. +3 more
core
Nonvolatile Resistive Switching in Pt/LaAlO_{3}/SrTiO_{3} Heterostructures
Physical Review X, 2013 Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO_{3}/SrTiO_{3} heterostructures,
Shuxiang Wu +10 more
doaj +1 more source
Nanoscale Research Letters, 2017 In this work, high-k composite TiAlO film has been investigated as charge-trapping material for nonvolatile memory applications. The annealing formed Al2O3-TiAlO-SiO2 dielectric stack demonstrates significant memory effects and excellent reliability ...
Wenchao Xu +11 more
doaj +1 more source