Results 111 to 120 of about 1,753,751 (305)

Ferroelectric-Enhanced Ultrafast Nonvolatile Floating-Gate Memory

Floating-gate memory, as one of the most widely used nonvolatile memories for practical deployments, plays a significant role in modern electronics. However, its inherent speed limitations make it challenging to keep pace with the explosive growth of ...
Peng Zhou, Zheng Zhang, Shiyou Chen, Jianguo Dong, Binghui Ge, Kang Wang, Zengxing Zhang   +6 more
core   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Controllable Resistive Switching in ReS₂ /WS₂ Heterostructure for Nonvolatile Memory and Synaptic Simulation. [PDF]

Adv Sci (Weinh), 2023
Huang F, Ke C, Li J, Chen L, Yin J, Li X, Wu Z, Zhang C, Xu F, Wu Y, Kang J.   +10 more
europepmc   +1 more source

Interlayer‐Sliding‐Enabled Multiferroicity and Giant Switchable Anomalous Hall Conductivity in RuO2Zn2F2 Bilayer

Advanced Science, EarlyView.
Interlayer sliding in the RuO2Zn2F2 bilayer induces ferroelectricity and enables reversible valley polarization switching. The electric dipole and valley‐resolved band edges are intimately coupled, revealing sliding ferroelectricity as a powerful mechanism for electrical control of valley degrees of freedom in 2D materials.
Djamel Bezzerga, Imran Khan, Ganie Suhail Ahmad, Jisang Hong   +3 more
wiley   +1 more source

MEFET-Based CAM/TCAM for Memory-Augmented Neural Networks

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Memory-augmented neural networks (MANNs) require large external memories to enable long-term memory storage and retrieval. Content-addressable memory (CAM) is a type of memory used for high-speed searching applications and is well-suited for MANNs ...
Sai Sanjeet, Jonathan Bird, Bibhu Datta Sahoo   +2 more
doaj   +1 more source

Expression of Concern: Electrical Study of Trapped Charges in Copper-Doped Zinc Oxide Films by Scanning Probe Microscopy for Nonvolatile Memory Applications. [PDF]

PLoS One, 2023
PLOS ONE Editors.
europepmc   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Preparation of Remote Plasma Atomic Layer-Deposited HfO₂ Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices. [PDF]

Nanomaterials (Basel), 2023
Yoo JH, Park WJ, Kim SW, Lee GR, Kim JH, Lee JH, Uhm SH, Lee HC.   +7 more
europepmc   +1 more source

Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review

Advanced Science, EarlyView.
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh, Ki‐bum Lee, Junghyeon Lee, Seunghee Cho, Malkeshkumar Patel, Hangfei Li, Yu Wen, Ye Zhou, Joondong Kim   +8 more
wiley   +1 more source

High-performance ferroelectric nonvolatile memory based on Gd-and Ni-codoped BiFeO₃ films. [PDF]

RSC Adv, 2022
Song Y, Wu Q, Jia C, Gao Z, Zhang W.
europepmc   +1 more source