Results 101 to 110 of about 1,732,535 (211)

Hybrid flexible resistive random access memory-gated transistor for novel nonvolatile data storage

, 2016
Here, a single‐device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch ...
Sun, Qijun, Zhuang, Jiaqing, Han, Su-Ting, Zhou, Li, Zhou, Ye, Zhang, Hua, Yan, Yan, Chen, Bo, Wang, Chundong, Roy, Vellaisamy A.L.   +9 more
core   +1 more source

Lab-on-device investigation of phase transition in MoOx semiconductors

Nature Communications
Precise tuning of phase transition material properties enables multifunctional devices for information processing and energy conversion, but controlling on-device phase transitions and monitoring microscopic mechanisms remains challenging.
Xiaoci Liang, Dongyue Su, Younian Tang, Bin Xi, Chunzhen Yang, Huixin Xiu, Jialiang Wang, Chuan Liu, Mengye Wang, Yang Chai   +9 more
doaj   +1 more source

Nanoelectromechanical Nonvolatile Memory Cells with Scaled Beam Dimensions

, 2017
In order to confirm the scalability of the nanoelectromechanical (NEM) nonvolatile memory cell, the lateral size of a bit-line (BL) beam is scaled down to 50 nm, using the photoresist ashing process.
Choi, Woo Young
core   +1 more source

Organic nonvolatile memory devices based on ferroelectricity

, 2009
-A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we
Blom, P.W.M., Naber, R.C.G., Boer, B. d., Leeuw, D.M. de, Asadi, K.   +4 more
core  

Material challenges for nonvolatile memory

APL Materials, 2022
Bhagwati Prasad, Stuart Parkin, Themis Prodromakis, Chang-Beom Eom, Jordi Sort, J. L. MacManus-Driscoll   +5 more
doaj   +1 more source

Self-powered photo-pyroelectric sensing in antiferroelectric Hafnium zirconium memory with asymmetric van der Waals electrodes

Nature Communications
Hafnium zirconium oxide with antiferroelectric polarizations holds great promise for emerging applications such as neuromorphic computing, energy-efficient storage, and nonvolatile memory, owing to its tunable phase transitions, fast switching speed ...
Xia Gan, Liping Zhu, Jiyuan Han, Xinrong Zuo, Changlin Zheng, Wenwu Li, Junhao Chu, Zhenghua An   +7 more
doaj   +1 more source

Monolithic fabrication of 1S1R cross-point device using single GexTe1-x material by controlling composition between memory and threshold switching

Applied Microscopy
Three-dimensional (3D) integrated one-selector one-resistor (1S1R) cross-point arrays are emerging as a leading next-generation memory technology. Achieving both nonvolatile memory switching and volatile threshold switching within a single material ...
Young-Min Kim, Sang-Heon Park, Jihye Lee, Sangyeop Kim, Siwon Park, Jong-Souk Yeo   +5 more
doaj   +1 more source

Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory. [PDF]

Adv Sci (Weinh), 2020
Liu H, Lu T, Li Y, Ju Z, Zhao R, Li J, Shao M, Zhang H, Liang R, Wang XR, Guo R, Chen J, Yang Y, Ren TL.   +13 more
europepmc   +1 more source

Concurrency implications of nonvolatile byte-addressable memory

, 2018
Thesis (Ph. D.)--University of Rochester. Department Computer Science, 2018.In the near future, storage technology advances are expected to provide nonvolatile byte addressable memory (NVM) for general purpose computing.
Izraelevitz, Joseph, Scott, Michael L. (1959 - )   +1 more
core  

Interfacial synthesis of a large-area coordination polymer membrane for rewritable nonvolatile memory devices. [PDF]

RSC Adv, 2020
Zhang Z, Nie Y, Hua W, Xu J, Ban C, Xiu F, Liu J.   +6 more
europepmc   +1 more source