Results 101 to 110 of about 8,490 (292)

Superatom Distortion Induces Triferroicity and Spin Splitting in Two‐Dimensional Antiferromagnets

Advanced Science, EarlyView.
The incorporation of superatoms into a 2D square lattice induces symmetry breaking, thereby enabling concurrent coupling among magnetism, ferroelectricity, and ferroelasticity. This strategy achieves triferroic behavior—characterized by spin‐split antiferromagnetic ground states—and offers a viable pathway toward energy‐efficient spintronic devices ...
Zhen Gao, Fengxian Ma, Guoping Gao, Weizhen Meng, Ying Liu, Yandong Ma, Yalong Jiao   +6 more
wiley   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

MOS Capacitor on 4H-SiC as a Nonvolatile Memory Element [PDF]

, 2002
Nonvolatile memory characteristics of MOS capacitors are presented in this letter. The MOS capacitors have been fabricated on N-type 4H SiC substrate with nitrided oxide-semiconductor interface.
Dimitrijev, Sima, Cheong, Kuan, Dimitrijev, S, Cheong, KY   +3 more
core   +1 more source

Interlayer‐Sliding‐Enabled Multiferroicity and Giant Switchable Anomalous Hall Conductivity in RuO2Zn2F2 Bilayer

Advanced Science, EarlyView.
Interlayer sliding in the RuO2Zn2F2 bilayer induces ferroelectricity and enables reversible valley polarization switching. The electric dipole and valley‐resolved band edges are intimately coupled, revealing sliding ferroelectricity as a powerful mechanism for electrical control of valley degrees of freedom in 2D materials.
Djamel Bezzerga, Imran Khan, Ganie Suhail Ahmad, Jisang Hong   +3 more
wiley   +1 more source

Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer

Scientific Reports, 2017
Nonvolatile ternary memory devices were fabricated using the composite of polystyrene (PS) and graphene oxide(GO) as active layers, which have an reliable intermediate state.
Yanmei Sun, Dianzhong Wen, Xuduo Bai, Junguo Lu, Chunpeng Ai   +4 more
doaj   +1 more source

WS2 Optoelectronic Memristive Reservoir Enabling Ultra‐Low‐Power, Multi‐Task, and Environmentally Stable Neuromorphic Computing

Advanced Science, EarlyView.
WS2‐based in‐memory sensing reservoir computing integrates sensing, memory, and computation in one compact device. It achieves ∼94% N‐MNIST, ∼93% eye motion perception, and ∼89% speech recognition with ultra‐low energy (∼25.5 fJ/spike). The system shows stability at 95% humidity, endurance over 1.5M cycles, and supports synaptic plasticity, enabling ...
Dayanand Kumar, Hanrui Li, Divyanshu Divyanshu, Dhananjay D. Kumbhar, Manoj Kumar Rajbhar, Amit Singh, Abdul Momin Syed, Selma Amara, Gianluca Setti, Nazek El‐Atab   +9 more
wiley   +1 more source

Analog Nonvolatile Computer Memory Circuits [PDF]

, 2007
In nonvolatile random-access memory (RAM) circuits of a proposed type, digital data would be stored in analog form in ferroelectric field-effect transistors (FFETs).
MacLeod, Todd
core   +1 more source

Design and scalability of a memory array utilizing anchor-free nanoelectromechanical nonvolatile memory device [PDF]

, 2012
This letter explains a nanoelectromechanical (NEM) nonvolatile memory (NVM) architecture employing an anchor-free electrode (shuttle) structure. The proposed NEM device utilizes adhesion forces to achieve bistable mechanical states for nonvolatile data ...
Vaddi, Ramesh, Kim, Tony Tae-Hyoung, Chua, Geng Li, Pott, Vincent, Lin, Julius Tsai Ming   +4 more
core   +1 more source

Field‐Free Spin‐Splitting‐Torque Driven Stochastic Neuron Mimicking the Neuromorphic Imagination for High‐Performance Recognition

Advanced Science, EarlyView.
The human brain's imagination, which enables autonomous driving hazard avoidance by completing missing visual information, relies on Gaussian‐stochastic neuron. We report the altermagnetic RuO2 spintronic neurons integrating field‐free switching and intrinsic Gaussian stochasticity, building an all‐spin ANN for high‐quality image repairing and high ...
Junwei Zeng, Baoshan Cui, Xi Guo, Jiahao Liu, Xiaoyu Feng, Liang Fang, Li Xi, Xiaolong Fan, Xiaoxi Liu, Yang Guo   +9 more
wiley   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source