Results 101 to 110 of about 8,462 (295)

Memristive Physical Reservoir Computing

Advanced Science, EarlyView.
Memristors’ nonlinear dynamics and input‐dependent memory effects make them ideal candidates for high‐performance physical reservoir computing (RC). Based on their conductance modulation, memristors can be classified as electronic or optoelectronic types.
Dian Jiao, Ziyuan Wang, Jingrui Wang, Li Zhang, Xianhua Wei, Lingxiang Hu, Zongxiao Li, Athanasios V. Vasilakos, Zhizhen Ye, Fei Zhuge   +9 more
wiley   +1 more source

Controlled Nonvolatile Transition in Polyoxometalates‐Graphene Oxide Hybrid Memristive Devices

, 2019
Graphene oxide (GO)-based nonvolatile memory has triggered tremendous interest owing to its high mechanical flexibility, high optical transparency, low cost fabrication, and environmental friendly manufacture for future flexible and transparent ...
Ding, Guanglong, Shi‐Rui Zhang, Jingyi Pan, Vellaisamy A. L. Roy, Zhang, Chen, Zhou, Kui, Pan, Jingyi, Xin Zhu, Xiaoli Chen, Pu Huang, Guanglong Ding, Su‐Ting Han, Chen Zhang, Han, Su-Ting, Zhou, Ye, Zhu, Xin, Ye Zhou, Zhang, Shi-Rui, Huang, Pu, Roy, Vellaisamy A. L., Chen, Xiaoli, Kui Zhou   +21 more
core   +1 more source

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices

Advanced Science, EarlyView.
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen, Yong‐Jyun Wang, Zi‐Qin Hong, Chien‐Hua Wang, Yi‐Ning Wang, Jia De Cheng, Chun‐Wei Huang, Ying‐Hao Chu, Wen‐Wei Wu   +8 more
wiley   +1 more source

Polymer and organic nonvolatile memory devices

, 2011
\u3cp\u3eOrganic molecules and semiconductors have been proposed as active part of a large variety of nonvolatile memory devices, including resistors, diodes and transistors.
Kim, Dong Yu, Muller, Robert N, Baeg, Kang Jun, Noh, Yong Young, Gelinck, G Gerwin, Heremans, P Paul   +5 more
core  

New photopatternable polyimide and programmable nonvolatile memory performances [PDF]

, 2019
We report the first photopatternable, nonvolatile memory consisting of high-temperature polyimide (PI), poly (hexafluoroisopropylidenediphthalimide-4-cinnamoyloxytri-phenylamine) (6F-HTPA-CI), and we demonstrate the successful fabrication and ...
Hahm, Suk Gyu, Park, Samdae, Ree, Moonhor   +2 more
core   +1 more source

Field‐Free Spin‐Splitting‐Torque Driven Stochastic Neuron Mimicking the Neuromorphic Imagination for High‐Performance Recognition

Advanced Science, EarlyView.
The human brain's imagination, which enables autonomous driving hazard avoidance by completing missing visual information, relies on Gaussian‐stochastic neuron. We report the altermagnetic RuO2 spintronic neurons integrating field‐free switching and intrinsic Gaussian stochasticity, building an all‐spin ANN for high‐quality image repairing and high ...
Junwei Zeng, Baoshan Cui, Xi Guo, Jiahao Liu, Xiaoyu Feng, Liang Fang, Li Xi, Xiaolong Fan, Xiaoxi Liu, Yang Guo   +9 more
wiley   +1 more source

Melting-free integrated photonic memory with layered polymorphs

Nanophotonics
Chalcogenide-based nonvolatile phase change materials (PCMs) have a long history of usage, from bulk disk memory to all-optic neuromorphic computing circuits.
Ullah Kaleem, Li Qiu, Li Tiantian, Gu Tingyi   +3 more
doaj   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

A Vertical Hybrid van der Waals Ferroelectric Material for Nonvolatile Memory

Two-dimensional (2D) ferroelectric materials can form an atomically thin dipole layer that can influence the electronic properties of a hybrid layered structure composed of a ferroelectric layer and a transition-metal dichalcogenide (TMDC). In this work,
Tawfik, Sherif Abdulkader, Gould, Tim
core   +1 more source

OUM Nonvolatile Semiconductor Memory Technology Overview

, 2006
OUMTM (Ovonic Unified Memory), also called PCRAM (phase-change RAM) or CRAM (chalcogenide RAM) is a nonvolatile semiconductor memory technology being developed by Ovonyx, Inc. in a number of industrial joint development programs.
Stephen J. Hudgens
core   +1 more source