Results 121 to 130 of about 1,753,751 (305)

Concurrency implications of nonvolatile byte-addressable memory

open access: yes, 2018
Thesis (Ph. D.)--University of Rochester. Department Computer Science, 2018.In the near future, storage technology advances are expected to provide nonvolatile byte addressable memory (NVM) for general purpose computing.
Scott, Michael L. (1959 - )   +1 more
core  

Multiferroic‐Centric Materials and Systems Engineering for Battery Applications: An Insight Into Mechanisms, Strategies, and Characterizations

open access: yesAdvanced Science, EarlyView.
Multiferroic order parameters – polarization, magnetization, and ferroelastic strain – are positioned as dynamic design variables for batteries. Their mechanistic roles, practical tuning through fabrication and external fields, and ferroic‐resolved characterization routes are unified into a closed‐loop framework, revealing how coupled ferroic responses
Jiaqi Su   +13 more
wiley   +1 more source

Nonvolatile memory based architectures using magnetoelectric FETs

open access: yes, 2022
Of the numerous beyond complementary metal-oxide semiconductor (CMOS) devices investigated, the magnetoelectric field effect transistor (MEFET) has shown promise as a high-speed and low-power device in both logic and memory applications.
Dowben, Peter A.   +3 more
core  

Sliding Ferroelectricity Driven Spin‐Layertronics in Altermagnetic Multilayers

open access: yesAdvanced Science, EarlyView.
Integrating sliding ferroelectricity with altermagnetism enables nonvolatile electrical control of spin and layer degrees of freedom. In bilayer CuF2, interlayer translation reverses layer‐locked spin‐split bands, establishing a multifunctional “spin‐layertronic” platform.
Rui Peng   +5 more
wiley   +1 more source

OUM Nonvolatile Semiconductor Memory Technology Overview

open access: yes, 2006
OUMTM (Ovonic Unified Memory), also called PCRAM (phase-change RAM) or CRAM (chalcogenide RAM) is a nonvolatile semiconductor memory technology being developed by Ovonyx, Inc. in a number of industrial joint development programs.
Stephen J. Hudgens
core   +1 more source

Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer. [PDF]

open access: yesNat Commun, 2022
Li Y   +8 more
europepmc   +1 more source

Piezopotential-Programmed Multilevel Nonvolatile Memory As Triggered by Mechanical Stimuli

open access: yes, 2016
We report the development of a piezopotential-programmed nonvolatile memory array using a combination of ion gel-gated field-effect transistors (FETs) and piezoelectric nanogenerators (NGs).
Qijun Sun (1498954)   +6 more
core   +1 more source

Retinomorphic Visual Processing Enabled by Contact‐Engineered IGZO Optoelectronic Synaptic Memtransistors

open access: yesAdvanced Science, EarlyView.
Here, we present an optoelectronic synaptic memtransistor (OSMT) integrating photoresponsive IGZO with contact‐engineered HfO2, enabling electrically and optically tunable synaptic weights. The device demonstrates broad range of tunable conductance states and array‐level image processing, highlighting its potential for intelligent machine vision ...
Donghyun Kang   +6 more
wiley   +1 more source

Sericin for resistance switching device with multilevel nonvolatile memory

open access: yes, 2013
Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a ...
Li, Yuangang   +8 more
core   +1 more source

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