Results 121 to 130 of about 1,753,751 (305)
Concurrency implications of nonvolatile byte-addressable memory
Thesis (Ph. D.)--University of Rochester. Department Computer Science, 2018.In the near future, storage technology advances are expected to provide nonvolatile byte addressable memory (NVM) for general purpose computing.
Scott, Michael L. (1959 - ) +1 more
core
Multiferroic order parameters – polarization, magnetization, and ferroelastic strain – are positioned as dynamic design variables for batteries. Their mechanistic roles, practical tuning through fabrication and external fields, and ferroic‐resolved characterization routes are unified into a closed‐loop framework, revealing how coupled ferroic responses
Jiaqi Su +13 more
wiley +1 more source
Nonvolatile memory based architectures using magnetoelectric FETs
Of the numerous beyond complementary metal-oxide semiconductor (CMOS) devices investigated, the magnetoelectric field effect transistor (MEFET) has shown promise as a high-speed and low-power device in both logic and memory applications.
Dowben, Peter A. +3 more
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Sliding Ferroelectricity Driven Spin‐Layertronics in Altermagnetic Multilayers
Integrating sliding ferroelectricity with altermagnetism enables nonvolatile electrical control of spin and layer degrees of freedom. In bilayer CuF2, interlayer translation reverses layer‐locked spin‐split bands, establishing a multifunctional “spin‐layertronic” platform.
Rui Peng +5 more
wiley +1 more source
OUM Nonvolatile Semiconductor Memory Technology Overview
OUMTM (Ovonic Unified Memory), also called PCRAM (phase-change RAM) or CRAM (chalcogenide RAM) is a nonvolatile semiconductor memory technology being developed by Ovonyx, Inc. in a number of industrial joint development programs.
Stephen J. Hudgens
core +1 more source
Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer. [PDF]
Li Y +8 more
europepmc +1 more source
Piezopotential-Programmed Multilevel Nonvolatile Memory As Triggered by Mechanical Stimuli
We report the development of a piezopotential-programmed nonvolatile memory array using a combination of ion gel-gated field-effect transistors (FETs) and piezoelectric nanogenerators (NGs).
Qijun Sun (1498954) +6 more
core +1 more source
Here, we present an optoelectronic synaptic memtransistor (OSMT) integrating photoresponsive IGZO with contact‐engineered HfO2, enabling electrically and optically tunable synaptic weights. The device demonstrates broad range of tunable conductance states and array‐level image processing, highlighting its potential for intelligent machine vision ...
Donghyun Kang +6 more
wiley +1 more source
High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications. [PDF]
Sung JY +5 more
europepmc +1 more source
Sericin for resistance switching device with multilevel nonvolatile memory
Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a ...
Li, Yuangang +8 more
core +1 more source

