Results 141 to 150 of about 1,732,535 (211)

Room-temperature ferroelectrically switchable quantum geometry in few-layer WTe₂ for complementary in-memory computing. [PDF]

Nat Commun
Wang R, Wang P, Chen H, Peng Y, Liu B, Xiong J, Zhang X, Pan C, Chen X, Yang SA, Liang SJ, Miao F, Song P.   +12 more
europepmc   +1 more source

Photon-driven magnetization switching in Fe₃GeTe₂ enables programmable, multilevel magnetic memory. [PDF]

Nat Commun
Li WQ, Hung SH, Li JX, Lu CC, Chen PL, Kuo C, Pan KH, Jeng HT, Liu CH.   +8 more
europepmc   +1 more source

Reconfigurable Selector-Only Memory (SOM) for Scalable Neuromorphic Computing. [PDF]

Adv Sci (Weinh)
Wen JY, Yi CQ, Zhang YR, Wang BH, Liu ZX, Zhou CY, Tong H, Miao XS.   +7 more
europepmc   +1 more source

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS₂ Memory Transistor. [PDF]

Adv Sci (Weinh)
Jeong Y, Wang H, Tordi P, Hu YC, Tamayo A, Wu B, Ahn HS, Sofer Z, Jung JH, Bonini M, Samorì P.   +10 more
europepmc   +1 more source

Applied spintronics: From spin transport to spin-charge interconversion and emerging devices. [PDF]

Sci Adv
Bibes M, Gomonay O, Kuschel T, Sinova J, Weiler M, Fukami S, Kläui M.   +6 more
europepmc   +1 more source

Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory

Advanced Materials, 2016
Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors.
Joonki Suh, Junqiao Wu, Yeonbae Lee
exaly   +2 more sources

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The zen of nonvolatile memories

Proceedings of the 43rd annual conference on Design automation - DAC '06, 2006
Silicon technology based nonvolatile memories (NVM) have achieved widespread adoption for code and data storage applications. In the last 30 years, the traditional floating gate bitcell has been scaled following Moore's law, but recently scaling limits have been encountered which will require alternative solutions after the 65 nm technology node.
openaire   +2 more sources

NONVOLATILE MEMORY DEVICE

2022
MIZUSHIMA KOICHI, MARUKAME TAKAO, NISHI YOSHIFUMI, NOMURA KUMIKO   +3 more
openaire   +2 more sources

An Ultrafast Nonvolatile Memory With Low Operation Voltage for High-Speed and Low-Power Applications

Advanced Functional Materials, 2021
Jiaqiang Li, Jin Zhang, Xu-Dong Chen
exaly