Results 141 to 150 of about 8,462 (295)

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Array‐Level Characterization of Cryogenic RRAM

Advanced Electronic Materials, EarlyView.
This paper reports the first array‐level comprehensive electrical characterization of a 1024‐device HfO2‐based RRAM array from 300, 77 to 4 K, covering forming, set/reset switching, endurance, retention, relaxation, and read disturb. The results manifest the high performance of RRAM array at cryogenic temperatures and huge application potential for ...
Yuyao Lu, Ruofei Hu, Zhixing Jiang, Feng Xu, Bin Gao, Jianshi Tang, He Qian, Huaqiang Wu   +7 more
wiley   +1 more source

Design of an Intermittent-Computing-Oriented Nonvolatile Register With a Switching-Probability-Aware Store-and-Verify Scheme

IEEE Access
This paper describes the configuration of a magnetic tunnel junction (MTJ)-based nonvolatile register designed for the greedy utilization of supplied energy in intermittent computing.
Masanori Natsui, Takahiro Hanyu
doaj   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Lab-on-device investigation of phase transition in MoOx semiconductors

Nature Communications
Precise tuning of phase transition material properties enables multifunctional devices for information processing and energy conversion, but controlling on-device phase transitions and monitoring microscopic mechanisms remains challenging.
Xiaoci Liang, Dongyue Su, Younian Tang, Bin Xi, Chunzhen Yang, Huixin Xiu, Jialiang Wang, Chuan Liu, Mengye Wang, Yang Chai   +9 more
doaj   +1 more source

Emerging Nonvolatile Memories for Machine Learning

28 pages, 13 figures, 1 ...
Adnan Mehonic, Dovydas Joksas
openaire   +2 more sources

Approach towards Hybrid Silicon/Molecular Electronics for Memory Applications

, 2005
As CMOS technology extends to and beyond 65-nm technology node, many challenges to MOSFET were raised. The industrial and academic communities are aggressively searching for solutions to meet these challenges: (1) non-classical CMOS to extend the life ...
Li, Qiliang
core  

Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications

, 2016
There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next ...
Tae Hyun Yoon (2253451), Sung-Yool Choi (1418842), Jong Yun Kim (1427890), Hu Young Jeong (1452505), Rodney S. Ruoff (1269966), Jeong Won Kim (796906), Byung Jin Cho (1775677), Jeong Yong Lee (1596436), Jin Ok Hwang (1527133), Ji-Eun Kim (60619), Sang Ouk Kim (1360428)   +10 more
core   +1 more source

Morphotropic Phase Boundary Engineering via Heterostructure for Low‐Voltage Ferroelectric Capacitors

Advanced Electronic Materials, EarlyView.
Morphotropic phase boundary engineering in HfxZr1‐xO2 heterostructures enables low‐voltage and fast ferroelectric switching. This layer promotes polarization switching near 0 V, resulting in ≈25% reduction in coercive voltage and enhanced capacitance. This heterostructure design provides a practical route for energy‐efficient ferroelectric capacitors ...
Changhyeon Han, Been Kwak, Ki‐Ryun Kwon, Jeong‐Han Kim, Jiyong Yim, Hyun‐Min Kim, Sangeun Kwak, Daewoong Kwon   +7 more
wiley   +1 more source

Structure and Spectroscopic Characterisation of Phenanthroline‐Based Iodobismuthate(III) Complexes Utilised for Raw Acoustic Signal Classification

Advanced Intelligent Discovery, EarlyView.
Memristors based on trimethylsulfonium (phenanthroline)tetraiodobismuthate have been utilised as a nonlinear node in a delayed feedback reservoir. This system allowed an efficient classification of acoustic signals, namely differentiation of vocalisation of the brushtail possum (Trichosurus vulpecula).
Ewelina Cechosz, Gisya Abdi, Andrzej Sławek, Marlena Gryl, Konrad Szaciłowski   +4 more
wiley   +1 more source