Results 151 to 160 of about 1,753,751 (305)

Self-powered photo-pyroelectric sensing in antiferroelectric Hafnium zirconium memory with asymmetric van der Waals electrodes

Nature Communications
Hafnium zirconium oxide with antiferroelectric polarizations holds great promise for emerging applications such as neuromorphic computing, energy-efficient storage, and nonvolatile memory, owing to its tunable phase transitions, fast switching speed ...
Xia Gan, Liping Zhu, Jiyuan Han, Xinrong Zuo, Changlin Zheng, Wenwu Li, Junhao Chu, Zhenghua An   +7 more
doaj   +1 more source

Van der Waals Heterostructures for Next‐Generation Spintronics: Multiferroic‐Mediated Magnetoelectric Properties

Advanced Science, EarlyView.
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee, Jiwoong Yang, Inhyeok Oh, Sanghan Lee   +3 more
wiley   +1 more source

Probabilistic Computing via Gate‐Tunable Random Telegraph Noise

Advanced Science, EarlyView.
Intrinsic random telegraph noise in metal–oxide–semiconductor field‐effect transistors is harnessed to create gate‐tunable probabilistic bits. By modulating carrier‐trapping dynamics, the device produces stochastic binary outputs with a continuous bias‐to‐probability transfer.
Gyungwon Yun, Jin Pyo Kang, Ho‐Sung Lee, Ik‐Hyeon Jeon, Ki‐Ju Park, Won‐Ju Cho, Seung‐heon Chris Baek, Joo‐Hyung Chae, Hamin Park   +8 more
wiley   +1 more source

Organic Electrochemical Transistors for Neuromorphic Bioelectronics: Materials and Manufacturing Technologies

Advanced Science, EarlyView.
Organic electrochemical transistors bridge biological ionic signaling and neuromorphic computation through volumetric electrochemical gating. This review connects Organic mixed ionic–electronic conductor materials, device architectures, and manufacturing technologies to show how geometry, ion transport, and fabrication strategies program plasticity ...
Hyunjin Lee, Jihyang Park, Xinyi Wang, Yueqi Deng, Jiashu Ren, Tao Zhou   +5 more
wiley   +1 more source

Cross‐scale Material‐Structure Synergy for 2D Metamaterials: Toward Customizable Intelligent Electromagnetic Manipulation in Multiphysics Fields

Advanced Science, EarlyView.
Recent advances in metasurface‐enabled low‐observable technologies are reviewed from the perspective of cross‐scale material–structure synergy. Electromagnetic, thermal, optical, and acoustic stealth are highlighted together with dynamic tuning, programmable coding, data‐driven inverse design, artificial intelligence, multispectral compatibility, and ...
Shuhao Wang, Xing Yang, Liping Liu, Yang Peng, Yangyang Wang, Hualiang Lv   +5 more
wiley   +1 more source

A Bio‐Inspired Visual Sensor With UV‐to‐NIR Fusion for Enhanced Recognition in Autonomous Driving Systems

Advanced Science, EarlyView.
Inspired by the sophisticated multilayer retinal architecture found in Pacific salmon eyes, a novel van der Waals heterojunction sensor based on NbNiTe5/BP is designed. Upon illumination at distinct wavelengths of 365 and 820 nm, the device exhibits distinctive bipolar photocurrent responses with opposite polarities. This unique optoelectronic behavior
Tianle Zeng, Zishen Zhao, Keqin Tang, Yawen Luo, Junxin Yan, Kun Ye, Jinlu Liu, Zhuo Dong, Zhipeng Yu, Weiming Lv, Ruicheng Li, Yenasheng Li, Lixuan Liu, Tianyu Xue, Chun Zhao, Yan Zhou, Kai Zhang, Zhongming Zeng, Zhongyuan Liu   +18 more
wiley   +1 more source

Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory. [PDF]

Adv Sci (Weinh), 2020
Liu H, Lu T, Li Y, Ju Z, Zhao R, Li J, Shao M, Zhang H, Liang R, Wang XR, Guo R, Chen J, Yang Y, Ren TL.   +13 more
europepmc   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Formation of Co-Si-N nanocrystal for nonvolatile memory application

, 2009
Current requirement of nonvolatile memory (NVM) are high density cell, low-power wastage, high speed operation, and good reliability for the scaling down device.
Liu, Tzu-Chia
core  

Enabling Quantum‐Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2‐Based RRAM From 300 to 1.5 K

Advanced Electronic Materials, EarlyView.
Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada, Alberto Mistroni, Ruolan Jia, Keerthi Dorai Swamy Reddy, Markus Fritscher, Felix Reichmann, Oliver Skibitzki, Juan Bautista Roldán, Helena Castán, Salvador Dueñas, Christian Wenger, Eduardo Pérez   +11 more
wiley   +1 more source