Results 151 to 160 of about 8,462 (295)

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Self-powered photo-pyroelectric sensing in antiferroelectric Hafnium zirconium memory with asymmetric van der Waals electrodes

Nature Communications
Hafnium zirconium oxide with antiferroelectric polarizations holds great promise for emerging applications such as neuromorphic computing, energy-efficient storage, and nonvolatile memory, owing to its tunable phase transitions, fast switching speed ...
Xia Gan, Liping Zhu, Jiyuan Han, Xinrong Zuo, Changlin Zheng, Wenwu Li, Junhao Chu, Zhenghua An   +7 more
doaj   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source

Material challenges for nonvolatile memory

APL Materials, 2022
Bhagwati Prasad, Stuart Parkin, Themis Prodromakis, Chang-Beom Eom, Jordi Sort, J. L. MacManus-Driscoll   +5 more
doaj   +1 more source

Formation of Co-Si-N nanocrystal for nonvolatile memory application

, 2009
Current requirement of nonvolatile memory (NVM) are high density cell, low-power wastage, high speed operation, and good reliability for the scaling down device.
Liu, Tzu-Chia
core  

Investigation of Analog Memristor Characteristics for Hardware Synaptic Weight in Multilayer Neural Network

Advanced Intelligent Systems, Volume 7, Issue 3, March 2025.
The systematic design of memristor‐based neural network is provided by analog conductance state parameters to accurately emulate the software‐based high‐resolution weight at discrete device level. The requirement of discrete analog conductance of memristor device is measured as ≈50 states with nonlinearity value of ≈0.142 within the deviation range of ...
Jingon Jang, Yoonseok Song, Sungjun Park
wiley   +1 more source

Compact Modeling of Volatile‐Switching Electrochemical Metallization Memory Cells by Means of the Electromotive Force

Advanced Intelligent Systems, EarlyView.
A volatile‐switching compact model of electrochemical metallization memory cells for neuromorphic architecture is developed and validated by reliable reproduction of device characterization measurements: I−V sweeps, SET kinetics, relaxation dynamics.
Rana Walied Ahmad, Solomon Amsalu Chekol, Julius Rasbach, Susanne Hoffmann‐Eifert, Stephan Menzel   +4 more
wiley   +1 more source

A Memristor‐Based In‐Memory Computing System‐on‐Chip with Efficient Depthwise Convolution

Advanced Intelligent Systems, EarlyView.
We present a memristor‐based in‐memory computing (IMC) architecture that enables efficient depthwise convolution (DWC) acceleration. Fabricated in a system‐on‐chip with crossbar arrays, the design improves memory utilization. Experimental validation demonstrates the first hardware acceleration of DWC in IMC, achieving a digital comparable inference ...
Wenhao Song, Fuxi Cai, Sangsu Park, Zhaoyan Li, Seonghun Lee, Mingyi Rao, Woohyung Choi, Seungin Shin, Yan Zhu, Sujin Chae, Myoungsub Kim, Mingche Wu, Hyejung Choi, Yuan Dao, Jaeyun Yi, Youngman Cho, Seon Yong Cha, Ning Ge, Qiangfei Xia, Soo Gil Kim, Miao Hu, J. Joshua Yang   +21 more
wiley   +1 more source

Thermally Stable Organic Synaptic Transistors Using a High‐Tg Polymer Electret

Advanced Intelligent Systems, EarlyView.
A high–glass‐transition‐temperature cyclic olefin copolymer (COC) electret enables thermally stable organic synaptic transistors for neuromorphic operation in harsh environments. UV–ozone treatment increases the trap density in COC, providing robust multilevel conductance and key synaptic functions (excitatory postsynaptic current/ inhibitory ...
Hoyoung Cho, Bombi Kim, Kyoungeun Lee, Moohyun Kim, Chaegwang Lim, Yeyun Bae, Jaeyeop Lee, Jiyoon Oh, Hyeok Kim, Jeongkyun Roh   +9 more
wiley   +1 more source

Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory. [PDF]

Adv Sci (Weinh), 2020
Liu H, Lu T, Li Y, Ju Z, Zhao R, Li J, Shao M, Zhang H, Liang R, Wang XR, Guo R, Chen J, Yang Y, Ren TL.   +13 more
europepmc   +1 more source