Results 171 to 180 of about 1,753,751 (305)

Array‐Level Characterization of Cryogenic RRAM

Advanced Electronic Materials, EarlyView.
This paper reports the first array‐level comprehensive electrical characterization of a 1024‐device HfO2‐based RRAM array from 300, 77 to 4 K, covering forming, set/reset switching, endurance, retention, relaxation, and read disturb. The results manifest the high performance of RRAM array at cryogenic temperatures and huge application potential for ...
Yuyao Lu, Ruofei Hu, Zhixing Jiang, Feng Xu, Bin Gao, Jianshi Tang, He Qian, Huaqiang Wu   +7 more
wiley   +1 more source

Hydrazine Intercalation into 2D MoTe₂ Field Effect Transistor as Charge Trapping Sites for Nonvolatile Memory Applications. [PDF]

Nanomaterials (Basel)
Yuan L, Wu Y, Ou H, Wu D, Ji Y, Qi D, Zhang W.   +6 more
europepmc   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Flexible BaTiO₃ Ferroelectric Nonvolatile Memory for Neuromorphic Computation. [PDF]

ACS Appl Mater Interfaces
Peng Y, Liu X, Luo G, Zhang F, Sun T, Li H, Cheng Y, Peng Y.   +7 more
europepmc   +1 more source

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

Advanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali, David Lehninger, Florencio Sánchez, Ignasi Fina   +3 more
wiley   +1 more source

Bi₂O₂Se-Based Monolithic Floating-Gate Nonvolatile Memory with Enhanced Charge Retention and Switching Performance. [PDF]

ACS Nano
Cheng CC, Chien HC, Lee TT, Chen YC, Nguyen HU, Chen SZ, Lin YC, Suenaga K, Shen CH, Chueh YL, Lin YF, Chou MY, Chiu PW.   +12 more
europepmc   +1 more source

Reconfigurable Ternary Logic‐In‐Memory With Organic Antiambipolar Transistor

Advanced Electronic Materials, EarlyView.
We develop a ternary logic‐in‐memory with an organic antiambipolar transistor combining a ternary inverter and ternary nonvolatile memory in the same circuit. The memory function of the circuit enables electrical reconfiguration to obtain standard, negative, and positive ternary inverters in the same device.
Ryoma Hayakawa, Taiga Kijima, Yuho Yamamoto, Yoichi Yamada, Yutaka Wakayama   +4 more
wiley   +1 more source

Assessing Design Space for the Device-Circuit Codesign of Nonvolatile Memory-Based Compute-in-Memory Accelerators. [PDF]

Nano Lett
Lele AS, Zhang B, Khwa WS, Chang MF.
europepmc   +1 more source

Structure and Spectroscopic Characterisation of Phenanthroline‐Based Iodobismuthate(III) Complexes Utilised for Raw Acoustic Signal Classification

Advanced Intelligent Discovery, EarlyView.
Memristors based on trimethylsulfonium (phenanthroline)tetraiodobismuthate have been utilised as a nonlinear node in a delayed feedback reservoir. This system allowed an efficient classification of acoustic signals, namely differentiation of vocalisation of the brushtail possum (Trichosurus vulpecula).
Ewelina Cechosz, Gisya Abdi, Andrzej Sławek, Marlena Gryl, Konrad Szaciłowski   +4 more
wiley   +1 more source

Improving the Nonvolatile Memory Characteristics of Sol-Gel-Processed Y₂O₃ RRAM Devices Using Mono-Ethanolamine Additives. [PDF]

Materials (Basel)
Heo S, Choi S, Lee S, Cho Y, Bae JH, Kang IM, Kim K, Lee WY, Jang J.   +8 more
europepmc   +1 more source