Results 171 to 180 of about 8,462 (295)

Investigation of Resistive Switching in Cu/a-SiC/P⁺-Si Structure for Multilevel Nonvolatile Memory Applications. [PDF]

Micromachines (Basel)
Shao H, Zhu X, Zhang X, Zheng W, Zhang L, Chen L.   +5 more
europepmc   +1 more source

Serial nonvolatile 1024 bit MNOS memory

, 1980
The characteristics and operation of a nonvolatile MNOS sequential memory designed and built by Sandia National Laboratories for DOD are described. First, a general description and block diagram are presented, followed by the power, voltage, clock and ...
Dodson, W. H., Sokel, R. J.
core  

Quasi‐digital memristor with self‐rectifying and synaptic functions in crossbar array architectures

FlexMat, EarlyView.
The text should be different from the abstract text. A self‐rectifying quasi‐digital memristor (QDM) featuring a well‐defined p‐AgI/n‐PbI2 heterojunction is developed. It monolithically integrate diode‐like rectification, digital switching, and analog plasticity.
Tianyu Liu, Qingqing Wang, Qiuyu Liu, Jinze Li, Zhongjing Xia, Hongcheng Yang, Zilong Mao, Siyu Gou, Zhe Li, Chao Zhu, Xuefen Song, Lin Wang   +11 more
wiley   +1 more source

Emerging Nonvolatile Memory Technologies in the Future of Microelectronics. [PDF]

ACS Omega
Katehi L, Yi SI, Lin YC, Banerjee S, Xia Q, Yang JJ.   +5 more
europepmc   +1 more source

Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing

Information &Functional Materials, EarlyView.
Wide‐bandgap semiconductors enable robust, low‐power neuromorphic devices for extreme environments. This review outlines material advantages, device physics, integration, and future directions for next‐generation brain‐inspired computing. ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data ...
Hongyu Tang, Pengsheng Min, Yang Zhang, Qingchun Zhang, Wanlu Zhang, Ruiqian Guo, Guoqi Zhang   +6 more
wiley   +1 more source

Hydrazine Intercalation into 2D MoTe₂ Field Effect Transistor as Charge Trapping Sites for Nonvolatile Memory Applications. [PDF]

Nanomaterials (Basel)
Yuan L, Wu Y, Ou H, Wu D, Ji Y, Qi D, Zhang W.   +6 more
europepmc   +1 more source

Reversible Dual‐Mode X‐Ray Memory Imaging of Photochromic Zero‐Dimensional Halide Perovskite Glass

Information &Functional Materials, EarlyView.
A photochromic halide perovskite glass with embedded Cs4PbBr6 nanocrystals enables reversible X‐ray–induced coloration and luminescence modulation, realizing dual‐mode X‐ray memory imaging with visual and photoluminescent readout. ABSTRACT Integrating photochromic and photoluminescence (PL) properties of halide perovskite glasses enables reversible ...
Yang Ci, Anjun Huang, Heping Zhao, Xinhao Cai, Yingzhu Zi, Xue Bai, Weiyu Lin, Yueteng Zhang, Suen Li, Jiayan Liao, Zhiguo Song, Jianbei Qiu, Ji Zhou, Zhengwen Yang   +13 more
wiley   +1 more source

Flexible BaTiO₃ Ferroelectric Nonvolatile Memory for Neuromorphic Computation. [PDF]

ACS Appl Mater Interfaces
Peng Y, Liu X, Luo G, Zhang F, Sun T, Li H, Cheng Y, Peng Y.   +7 more
europepmc   +1 more source

Nonvolatile Memory Technology for Space Applications

, 2010
This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3 ...
Oldham, Timothy R., Berg, Melanie, Friendlich, Mark, Irom, Farokh, Kim, Hak, LaBel, Kenneth A., Nguyen, Duc   +6 more
core  

Hybrid Volatile/Nonvolatile Resistive Switching Memory in Ternary Metal Oxide Enabling Hopfield Neural Classification

Processing data demands volatile memory, whereas storage necessitates nonvolatile devices. Typically, during the operations, data moves back and forth between them, causing an increase in energy consumption, undesired heating, and von Neumann bottleneck.
Hyungtak Seo (1502104), Mohit Kumar (399134), Seung-Ik Han (14600493), SeokWon Lim (14600496)   +3 more
core   +1 more source