Results 161 to 170 of about 8,462 (295)
SONOS Nonvolatile Memory Cell Programming Characteristics
, 2010 Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model.
Phillips, Thomas A. +2 more
core
Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation
Advanced Intelligent Systems, EarlyView.Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison +4 more
wiley +1 more source
Ising Solver Using Vertical NAND Flash Memory
Advanced Intelligent Systems, EarlyView.Commercial V‐NAND flash memory is repurposed as a discrete‐time Ising solver by exploiting in‐memory current summation and read‐voltage‐controlled intrinsic noise. The system implements Hopfield neural‐network updates with simulated‐annealing‐like behavior, solving max‐cut problems with high accuracy and energy efficiency while using mass‐produced ...
Sung‐Ho Park +7 more
wiley +1 more source
Interfacial synthesis of a large-area coordination polymer membrane for rewritable nonvolatile memory devices. [PDF]
RSC Adv, 2020 Zhang Z +6 more
europepmc +1 more source
A serially reprogrammable nonvolatile program memory for an airborne digital radar processor
, 1986 Includes bibliographical references (pages 58-59)This paper details the design and fabrication of a prototype 32Kx24\ud bit serially reprogrammable nonvolatile program memory for a\ud high-speed airborne digital radar processor.
Siering, Erik Richard
core
Bioinspired Crossmodal Tactile Sensory Nerve for High‐Accurate Object Recognition
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.An artificial crossmodal sensory neuron system (ACSNS) that combines a complementary memristor with high‐sensitivity pressure–temperature bimodal sensors, which integrate tactile perception, information storage, and neuromorphic computing. With the aid of machine learning, this ACSNS presents an improved accuracy of 96.67% in recognizing temperatures ...
Delu Chen +8 more
wiley +1 more source
, 2007 A nonvolatile analog memory uses pairs of ferroelectric field effect transistors (FFETs). Each pair is defined by a first FFET and a second FFET. When an analog value is to be stored in one of the pairs, the first FFET has a saturation voltage applied ...
MacLeod, Todd C.
core
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
Dipole-Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices. [PDF]
Nanomicro LettKo EB +9 more
europepmc +1 more source
Light‐Modulated Exchange Bias in Multiferroic Heterostructures
Electron, EarlyView.In this article, exchange bias and magnetization are modulated with visible light at room temperature in PMN‐PZT/FeGa/IrMn multiferroic heterostructures. Photostrictive effect is the main mechanism leading to the modulation of magnetic anisotropy and interfacial exchange bias coupling between the ferromagnetic and antiferromagnetic layers.
Huan Tan +9 more
wiley +1 more source