Results 161 to 170 of about 1,753,751 (305)

Interfacial synthesis of a large-area coordination polymer membrane for rewritable nonvolatile memory devices. [PDF]

RSC Adv, 2020
Zhang Z, Nie Y, Hua W, Xu J, Ban C, Xiu F, Liu J.   +6 more
europepmc   +1 more source

Memory, citizenship and social behaviour : Can we (really) learn from the past?

, 2015
Sarah Gensburger et Sandrine Lefranc (CNRS – ISP – Université Paris Ouest – ENS Cachan) In this research we seek to challenge the widespread belief that remembering our past is necessary for preserving peace and democracy and that we can “learn” from the
Women Memory
core  

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

Advanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li, YongRui Wang, Weifeng Zhang, Jikang Xu, Xiaobing Yan   +4 more
wiley   +1 more source

Ultrafast switching and high-endurance nonvolatile memory enabled by intrinsic switchable polarization in semiconducting Janus monolayers. [PDF]

Nat Commun
Duong NT, Krishna S, Nguyen MC, Kim HS, Lam VT, Gul HZ, Choi SH, Kim M, Lee D, Tran TU, Dat VK, Do VD, Hoang VH, Rho H, Kim YM, Yu WJ, Kim KK, Lim SC.   +17 more
europepmc   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

Dipole-Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices. [PDF]

Nanomicro Lett
Ko EB, Sung J, Choi SY, Hassan Y, Bae JJ, Kim J, Kim HY, Lee E, Choi MS, Kim HH.   +9 more
europepmc   +1 more source

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

Advanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel, Aleix Barrera, Lluís Balcells, Narcís Mestres, Enrique Miranda, Anna Palau, Jordi Suñé   +6 more
wiley   +1 more source

Investigation of Resistive Switching in Cu/a-SiC/P⁺-Si Structure for Multilevel Nonvolatile Memory Applications. [PDF]

Micromachines (Basel)
Shao H, Zhu X, Zhang X, Zheng W, Zhang L, Chen L.   +5 more
europepmc   +1 more source

On the Role of Preprocessing and Memristor Dynamics in Reservoir Computing for Image Classification

Advanced Electronic Materials, EarlyView.
ABSTRACT Reservoir computing (RC) is an emerging recurrent neural network architecture that has attracted growing attention for its low training cost and modest hardware requirements. Memristor‐based circuits are particularly promising for RC, as their intrinsic dynamics can reduce network size and parameter overhead in tasks such as time‐series ...
Rishona Daniels, Duna Wattad, Ronny Ronen, David Saad, Shahar Kvatinsky   +4 more
wiley   +1 more source

Emerging Nonvolatile Memory Technologies in the Future of Microelectronics. [PDF]

ACS Omega
Katehi L, Yi SI, Lin YC, Banerjee S, Xia Q, Yang JJ.   +5 more
europepmc   +1 more source