Results 131 to 140 of about 1,753,751 (305)

Hydrogen‐Stabilized Self‐Rectifying Memristor Arrays for Reliable Multilevel Synapses in Transformer‐Based Keyword Spotting

Advanced Science, EarlyView.
A non‐filamentary self‐rectifying HfO2/TiOx resistive random‐access memory integrates H2 annealing with an incremental step pulse with verify algorithm to achieve stable and linear analog conductance modulation. The device enables low‐current 6‐bit multilevel operation while suppressing sneak current in crossbar arrays. Implemented in Transformer‐based
Seonjeong Lee, Seohyeon Ju, Won Joo Lee, Myounggon Kang, Sungjun Kim, Yoon Kim   +5 more
wiley   +1 more source

Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO₂/Al₂O₃-Based Charge Trapping Layers. [PDF]

Materials (Basel), 2022
Spassov D, Paskaleva A, Guziewicz E, Wozniak W, Stanchev T, Ivanov T, Wojewoda-Budka J, Janusz-Skuza M.   +7 more
europepmc   +1 more source

SONOS Nonvolatile Memory Cell Programming Characteristics [PDF]

, 2010
Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model.
Phillips, Thomas A., Ho, Fat D., MacLeod, Todd C.   +2 more
core  

Design and scalability of a memory array utilizing anchor-free nanoelectromechanical nonvolatile memory device

, 2012
This letter explains a nanoelectromechanical (NEM) nonvolatile memory (NVM) architecture employing an anchor-free electrode (shuttle) structure. The proposed NEM device utilizes adhesion forces to achieve bistable mechanical states for nonvolatile data ...
Vaddi, Ramesh, Kim, Tony Tae-Hyoung, Chua, Geng Li, Pott, Vincent, Lin, Julius Tsai Ming   +4 more
core   +1 more source

Hierarchical Multi‐Mode Computing in Interlayer‐Coupled 3D RRAM Crossbar Arrays

Advanced Science, EarlyView.
2‐deck RRAM crossbar array provides a versatile hardware platform for multifunctional in‐memory computing. Stacked, series, and entropy node configurations enable multi‐layer conductance modulation, logic‐in‐memory operation, genetic learning, and reconfigurable physical unclonable functions.
Seungman Park, Jaewoo Choi, Gigon Nam, Junsu Yu, Donghyun Ryu, Jung‐Kyu Lee, Sungjoon Kim, Sungjun Kim   +7 more
wiley   +1 more source

High-Quality Single-Crystalline β-Ga₂O₃ Nanowires: Synthesis to Nonvolatile Memory Applications. [PDF]

Nanomaterials (Basel), 2021
Sivakumar C, Tsai GH, Chung PF, Balraj B, Lin YF, Ho MS.   +5 more
europepmc   +1 more source

Volatile ZrO2 Antiferroelectric Tunnel Junctions for Rapid, Energy‐Efficient Physical Reservoir Computing

Advanced Science, EarlyView.
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon, Moonseek Jeong, Su In Hwang, Geun Hyeong Park, Joonyong Kim, Hyojun Choi, Hyeong Seok Choi, Da Hyun Kim, Dong Hee Han, Ju Yong Park, Seungho Baek, Jung Ho Yoon, Dong Hyun Lee, Min Hyuk Park   +13 more
wiley   +1 more source

Lab-on-device investigation of phase transition in MoOx semiconductors

Nature Communications
Precise tuning of phase transition material properties enables multifunctional devices for information processing and energy conversion, but controlling on-device phase transitions and monitoring microscopic mechanisms remains challenging.
Xiaoci Liang, Dongyue Su, Younian Tang, Bin Xi, Chunzhen Yang, Huixin Xiu, Jialiang Wang, Chuan Liu, Mengye Wang, Yang Chai   +9 more
doaj   +1 more source

Nonvolatile Electrochemical Memory at 600C Enabled by Composition Phase Separation

CMOS-based microelectronics are limited to ~150°C and therefore not suitable for the extreme high temperatures in aerospace, energy, and space applications.
Simakas, Leah S., Watkins, Virgil J., Li, Jingxian, Fuller, Elliot J., Cline, Laszlo A., Li, Yiyang, Talin, A. Alec, Jalbert, Andrew J., Geisler, Noah J.   +8 more
core   +1 more source

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

Advanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim, Shinhyeong Lee, Hyojun Choi, Minseung Park, Hyunah Cho, Min Hyuk Park, Yunseok Kim   +6 more
wiley   +1 more source