Results 81 to 90 of about 1,753,751 (305)

Current Status of Nonvolatile Semiconductor Memory Technology

, 2010
In this report, an overview of the current status of nonvolatile semiconductor memory technology is presented. We are reaching the integration limit of flash memories, and many new types of memories to replace conventional flash memories have been ...
Yoshihisa Fujisaki
core   +1 more source

Analog Tensor Processing With Carbon Nanotube In‐Memory Matrix Multiplications for Edge Computer Vision Acceleration

Advanced Materials, EarlyView.
This work prototypes a carbon nanotube‐based analog tensor core that performs in‐memory, parallel visual processing. Integrating non‐volatile memories and compact circuits, the core enables high‐speed analog matrix multiplications and can demonstrate accurate three dimensional (3D) spatial transformation and edge detection. With lightweight design, the
Jingfang Pei, Lekai Song, Songwei Liu, Yingyi Wen, Yaoqiang Zhou, Yang Liu, Pengyu Liu, Wenyu Cui, Xin Lu, Teng Ma, Zegao Wang, Guohua Hu   +11 more
wiley   +1 more source

Atomically Precise Ag11 and Ag12 Nanocluster‐Assembled 2D Materials for Memristive and Neuromorphic Functionality

Advanced Materials, EarlyView.
Two‐dimensional Ag11 and Ag12 cluster‐assembled materials (CAMs) are synthesized, offering atomically precise platforms with tunable electronic properties. The resulting materials exhibit robust memristive switching and neuromorphic response, demonstrating their promise for advanced nanoelectronic and memory applications.
Noohul Alam, Towhidur Rahaman, Céline Besnard, Arnulf Rosspeintner, Latevi Max Lawson Daku, Saood Khan, Soumya Jyoti Ray, Thomas Bürgi   +7 more
wiley   +1 more source

Nonvolatile Resistive Switching in Pt/LaAlO_{3}/SrTiO_{3} Heterostructures

Physical Review X, 2013
Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO_{3}/SrTiO_{3} heterostructures,
Shuxiang Wu, Xin Luo, Stuart Turner, Haiyang Peng, Weinan Lin, Junfeng Ding, Adrian David, Biao Wang, Gustaaf Van Tendeloo, Junling Wang, Tom Wu   +10 more
doaj   +1 more source

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Nanoscale Research Letters, 2017
In this work, high-k composite TiAlO film has been investigated as charge-trapping material for nonvolatile memory applications. The annealing formed Al2O3-TiAlO-SiO2 dielectric stack demonstrates significant memory effects and excellent reliability ...
Wenchao Xu, Yang Zhang, Zhenjie Tang, Zhengjie Shao, Guofu Zhou, Minghui Qin, Min Zeng, Sujuan Wu, Zhang Zhang, Jinwei Gao, Xubing Lu, Junming Liu   +11 more
doaj   +1 more source

Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing

Advanced Materials, EarlyView.
Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris, Johannes Hellwig, Hugh Greatorex, Clemens Wittberg, Panagiotis Koutsogiannis, César Magén, Elisabetta Chicca, Regina Dittmann   +7 more
wiley   +1 more source

Polymer and organic nonvolatile memory devices

, 2011
Organic molecules and semiconductors have been proposed as active part of a large variety of nonvolatile memory devices, including resistors, diodes and transistors. In this review, we focus on electrically reprogrammable nonvolatile memories.
Noh, Y.Y., Heremans, P., Müller, R., Kim, D.Y., Gelinck, G.H., Baeg, K.J.   +5 more
core   +1 more source

On Error Correction for Nonvolatile Processing-In-Memory [PDF]

Processing in memory (PiM) represents a promising computing paradigm to enhance performance of numerous data-intensive applications. Variants performing computing directly in emerging nonvolatile memories can deliver very high energy efficiency.
Karpuzcu, Ulya R., Cılasun, Hüsrev, Zabihi, Masoud, Chowdhury, Zamshed I., Lv, Yang, Resch, Salonik, Zink, Brandon, Wang, Jian-Ping, Sapatnekar, Sachin S.   +8 more
core   +1 more source

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

Advanced Materials, EarlyView.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh, Alif Syafiq Kamarol Zaman, Muzhen Xu, Yuki Usami, Saptarshi Das, Hirofumi Tanaka   +5 more
wiley   +1 more source

Hybrid flexible resistive random access memory-gated transistor for novel nonvolatile data storage

, 2016
Here, a single‐device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch ...
Sun, Qijun, Zhuang, Jiaqing, Han, Su-Ting, Zhou, Li, Zhou, Ye, Zhang, Hua, Yan, Yan, Chen, Bo, Wang, Chundong, Roy, Vellaisamy A.L.   +9 more
core   +1 more source