Results 81 to 90 of about 8,462 (295)

Nonvolatile-Memory Characteristics of AlO--Implanted AI2O3

, 2009
The nonvolatile-memory (NVM) characteristics of AIO- -implanted Al2O3structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention.
Robert Elliman (20007516), Salvy Russo (18029545), Suk-Ho Choi (1492645), K Belay (19660939), Sung Kim (59072), Min Kim (218786)   +5 more
core  

Orbital Magnetic Moment Controlled Converse Magnetoelectric Effect in bcc‐Co3Mn/Fe/V/PMN‐PT Multiferroic Heterostructures

Advanced Science, EarlyView.
Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami, Yuichi Murakami, Ryota Watarai, Yu Shiratsuchi, Yoshihiro Gohda, Kohei Hamaya   +5 more
wiley   +1 more source

Suspended Gate Silicon Nanodots memory

, 2008
This paper proposes a new non-volatile semiconductor memory which features a suspended gate integrated with silicon nanocrystals dots as a floating gate and the MOSFET as a readout. Performing three-dimensional finite element simulations combined with an
Mizuta, Hiroshi, Garcia-Ramirez, Mario A., Yoshimura, Hideo, Tsuchiya, Yoshishige   +3 more
core  

Polarization‐Enabled Piezoelectric Tellurium–Selenium (TexSe1–x) Thin Films for Memory Switching and Artificial Synaptic Functions

Advanced Science, EarlyView.
Here, we demonstrate and investigate polarization‐enabled electromechanical responses in cryogenic physical vapor deposition (cryogenic PVD)‐deposited TexSe1‐x thin films, a tellurium‐based compound with a tunable bandgap and enhanced non‐centrosymmetry.
Chia‐Chen Chung, Mayur Chaudhary, Chia‐Hung Lo, Po‐Chien Lai, You‐Jie Lin, Ruei‐Hong Cyu, Yu‐Ren Peng, Bing‐Ni Gu, Zhao‐Feng Lou, Quynh Thi Le, Yi‐Jen Yu, Yen‐Fu Lin, Min‐Hung Lee, Ying‐Hao Chu, Chang‐Hong Shen, Der‐Hsien Lien, Yu‐Lun Chueh   +16 more
wiley   +1 more source

ELECTRICAL CHARACTERIZATION, PHYSICS, MODELING AND RELIABILITY OF INNOVATIVE NON-VOLATILE MEMORIES

, 2012
Enclosed in this thesis work it can be found the results of a three years long research activity performed during the XXIV-th cycle of the Ph.D. school in Engineering Science of the Università degli Studi di Ferrara. The topic of this work is concerned
Zambelli, Cristian
core  

Hybrid flexible resistive random access memory-gated transistor for novel nonvolatile data storage

, 2016
Here, a single‐device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch ...
Sun, Qijun, Zhuang, Jiaqing, Han, Su-Ting, Zhou, Li, Zhou, Ye, Zhang, Hua, Yan, Yan, Chen, Bo, Wang, Chundong, Roy, Vellaisamy A.L.   +9 more
core   +1 more source

Two‐Dimensional Triferroics: From Fundamental Couplings to Multifunctional Applications

Advanced Science, EarlyView.
This graphic summarizes the three main types of currently reported 2D triferroic couplings. From the structural perspective, existing systems can be broadly classified into two categories, which exhibit distinct symmetry features and coupling behaviors. Beyond the lattice difference, a third type involves the interplay among ferroelectricity, magnetism,
Yang Li, Jialin Gong, Zhiqing Li
wiley   +1 more source

Nonvolatile Resistive Switching in Pt/LaAlO_{3}/SrTiO_{3} Heterostructures

Physical Review X, 2013
Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO_{3}/SrTiO_{3} heterostructures,
Shuxiang Wu, Xin Luo, Stuart Turner, Haiyang Peng, Weinan Lin, Junfeng Ding, Adrian David, Biao Wang, Gustaaf Van Tendeloo, Junling Wang, Tom Wu   +10 more
doaj   +1 more source

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Nanoscale Research Letters, 2017
In this work, high-k composite TiAlO film has been investigated as charge-trapping material for nonvolatile memory applications. The annealing formed Al2O3-TiAlO-SiO2 dielectric stack demonstrates significant memory effects and excellent reliability ...
Wenchao Xu, Yang Zhang, Zhenjie Tang, Zhengjie Shao, Guofu Zhou, Minghui Qin, Min Zeng, Sujuan Wu, Zhang Zhang, Jinwei Gao, Xubing Lu, Junming Liu   +11 more
doaj   +1 more source

Superatom Distortion Induces Triferroicity and Spin Splitting in Two‐Dimensional Antiferromagnets

Advanced Science, EarlyView.
The incorporation of superatoms into a 2D square lattice induces symmetry breaking, thereby enabling concurrent coupling among magnetism, ferroelectricity, and ferroelasticity. This strategy achieves triferroic behavior—characterized by spin‐split antiferromagnetic ground states—and offers a viable pathway toward energy‐efficient spintronic devices ...
Zhen Gao, Fengxian Ma, Guoping Gao, Weizhen Meng, Ying Liu, Yandong Ma, Yalong Jiao   +6 more
wiley   +1 more source