Results 81 to 90 of about 1,732,535 (211)

Neuromorphic computing using non-volatile memory

Advances in Physics: X, 2017
Dense crossbar arrays of non-volatile memory (NVM) devices represent one possible path for implementing massively-parallel and highly energy-efficient neuromorphic computing systems.
Geoffrey W. Burr, Robert M. Shelby, Abu Sebastian, Sangbum Kim, Seyoung Kim, Severin Sidler, Kumar Virwani, Masatoshi Ishii, Pritish Narayanan, Alessandro Fumarola, Lucas L. Sanches, Irem Boybat, Manuel Le Gallo, Kibong Moon, Jiyoo Woo, Hyunsang Hwang, Yusuf Leblebici   +16 more
doaj   +1 more source

Controllable Resistive Switching in ReS₂ /WS₂ Heterostructure for Nonvolatile Memory and Synaptic Simulation. [PDF]

Adv Sci (Weinh), 2023
Huang F, Ke C, Li J, Chen L, Yin J, Li X, Wu Z, Zhang C, Xu F, Wu Y, Kang J.   +10 more
europepmc   +1 more source

Self-aligned TiSi2/Si Hetero-nanocrystal Nonvolatile Memory

, 2007
This work describes a novel nonvolatile memory device with self-aligned TiSi2/Si hetero-nanocrystal charge storage nodes. The TiSi2/Si hetero-nanocrystals can be readily fabricated using industrial standard self-aligned silicidation technique based on Si
Yan Zhu, Bei Li, Jianlin Liu
core   +1 more source

Expression of Concern: Electrical Study of Trapped Charges in Copper-Doped Zinc Oxide Films by Scanning Probe Microscopy for Nonvolatile Memory Applications. [PDF]

PLoS One, 2023
PLOS ONE Editors.
europepmc   +1 more source

MEFET-Based CAM/TCAM for Memory-Augmented Neural Networks

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Memory-augmented neural networks (MANNs) require large external memories to enable long-term memory storage and retrieval. Content-addressable memory (CAM) is a type of memory used for high-speed searching applications and is well-suited for MANNs ...
Sai Sanjeet, Jonathan Bird, Bibhu Datta Sahoo   +2 more
doaj   +1 more source

Preparation of Remote Plasma Atomic Layer-Deposited HfO₂ Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices. [PDF]

Nanomaterials (Basel), 2023
Yoo JH, Park WJ, Kim SW, Lee GR, Kim JH, Lee JH, Uhm SH, Lee HC.   +7 more
europepmc   +1 more source

Nonvolatile memory based architectures using magnetoelectric FETs

, 2022
Of the numerous beyond complementary metal-oxide semiconductor (CMOS) devices investigated, the magnetoelectric field effect transistor (MEFET) has shown promise as a high-speed and low-power device in both logic and memory applications.
Dowben, Peter A., Fan, Deliang, Angizi, Shaahin, Marshall, Andrew   +3 more
core  

High-performance ferroelectric nonvolatile memory based on Gd-and Ni-codoped BiFeO₃ films. [PDF]

RSC Adv, 2022
Song Y, Wu Q, Jia C, Gao Z, Zhang W.
europepmc   +1 more source

Design and scalability of a memory array utilizing anchor-free nanoelectromechanical nonvolatile memory device

, 2012
This letter explains a nanoelectromechanical (NEM) nonvolatile memory (NVM) architecture employing an anchor-free electrode (shuttle) structure. The proposed NEM device utilizes adhesion forces to achieve bistable mechanical states for nonvolatile data ...
Vaddi, Ramesh, Kim, Tony Tae-Hyoung, Chua, Geng Li, Pott, Vincent, Lin, Julius Tsai Ming   +4 more
core   +1 more source

Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer. [PDF]

Nat Commun, 2022
Li Y, Zhang ZC, Li J, Chen XD, Kong Y, Wang FD, Zhang GX, Lu TB, Zhang J.   +8 more
europepmc   +1 more source