Results 61 to 70 of about 1,732,535 (211)

EasiLIR: Lightweight Incremental Reprogramming for Sensor Networks

International Journal of Distributed Sensor Networks, 2014
Energy-efficient wireless reprogramming is key issues for long-lived sensor network. Most of wireless reprogramming approaches focus on the energy efficiency of the data transmission phase. However, the program rebuilding phase on target node is possibly
Jiefan Qiu, Dong Li, Hailong Shi, Li Cui
doaj   +1 more source

Nonvolatile-Memory Characteristics of AlO--Implanted AI2O3

, 2009
The nonvolatile-memory (NVM) characteristics of AIO- -implanted Al2O3structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention.
Robert Elliman (20007516), Salvy Russo (18029545), Suk-Ho Choi (1492645), K Belay (19660939), Sung Kim (59072), Min Kim (218786)   +5 more
core  

Plate : persistent memory management for nonvolatile main memory

Over the past few years, nonvolatile memory has actively been researched and developed. Therefore, studying operating system (OS) designs predicated on the main memory in the form of a nonvolatile memory and studying methods to manage persistent data in ...
Goto, Masataka, Taniguchi, Hideo, Nagai, Kengo, Yamauchi, Toshihiro, Matono, Tsukasa, Ichikawa, Masaya, Yamamoto, Yuta, Inamoto, Shinji   +7 more
core   +1 more source

FSL: Fast system launch through persistent computing with nonvolatile memory

, 2017
Next generation memory technologies, which we denote as new memory, have both nonvolatile and byte addressable properties. These characteristics are expected to bring changes to the conventional computer system structure.
Sam H. Noh, Hyeonho Song, Song, Hyeonho, Noh, Sam H.   +3 more
core   +1 more source

OUM Nonvolatile Semiconductor Memory Technology Overview

, 2006
OUMTM (Ovonic Unified Memory), also called PCRAM (phase-change RAM) or CRAM (chalcogenide RAM) is a nonvolatile semiconductor memory technology being developed by Ovonyx, Inc. in a number of industrial joint development programs.
Stephen J. Hudgens
core   +1 more source

Monolayer MoS2-based nonvolatile transistors with a titanium nitride in the gate

AIP Advances, 2019
Low-power, nonvolatile transistors are demanded in the digital electronics development. In our work, molybdenum disulfide (MoS2) acts as the channel material integrated with TiN, which is used as a floating gate to build a floating gate transistor.
Kailiang Huang, Miao Zhao, Xueyuan Liu, Chao Feng, Bing Sun, Hudong Chang, Yuping Zeng, Honggang Liu   +7 more
doaj   +1 more source

Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure

Advanced Electronic Materials, 2020
In the field of memory and spin‐logical devices, multiferroics have the potentials of low‐energy informational operation. A novel memory and logic device in a PbZr0.2Ti0.8O3/Co/Pt (PZT/Co/Pt) multiferroic heterostructure with perpendicular magnetic ...
Zengyao Ren, Mengxi Wang, Pengfei Liu, Qi Liu, Kaiyou Wang, Gehard Jakob, Jikun Chen, Kangkang Meng, Xiaoguang Xu, Jun Miao, Yong Jiang   +10 more
doaj   +1 more source

Radiation and Reliability Concerns for Modern Nonvolatile Memory Technology [PDF]

, 2011
Commercial nonvolatile memory technology is attractive for space applications, but radiation issues are serious concerns.
Oldham, Timothy R., Castillo, J., McMorrow, D., Mavis, D. G., Buchner, S. P., Eaton, P. H., Friendlich, Mark R., Berg, Melanie D., LaBel, Kenneth A., Kim, Hak S.   +9 more
core  

Sericin for resistance switching device with multilevel nonvolatile memory

, 2013
Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a ...
Li, Yuangang, Chen, Xiaodong, Cai, Yurong, Zheng, Liyan, Liu, Yuanjun, Wang, Xiaotian, Meng, Fanben, Wang, Hong, Jiang, Yueyue   +8 more
core   +1 more source

Nonvolatile Resistive Switching in Pt/LaAlO_{3}/SrTiO_{3} Heterostructures

Physical Review X, 2013
Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO_{3}/SrTiO_{3} heterostructures,
Shuxiang Wu, Xin Luo, Stuart Turner, Haiyang Peng, Weinan Lin, Junfeng Ding, Adrian David, Biao Wang, Gustaaf Van Tendeloo, Junling Wang, Tom Wu   +10 more
doaj   +1 more source