Results 61 to 70 of about 1,753,751 (305)

2K nonvolatile shadow RAM and 265K EEPROM SONOS nonvolatile memory development [PDF]

, 1998
This paper describes Silicon Oxide Nitride Oxide Semiconductor (SONOS) nonvolatile memory development at Sandia National Laboratories. A 256K EEPROM nonvolatile memory and a 2K nonvolatile shadow RAM are under development using an n-channel SONOS memory ...
Habermehl, S. D., Mahl, P. R., Murray, J. R., Knoll, M. G., Rodriguez, J. L., Bennett, R. S., Tafoya-Porras, B. C., Jones, R. V., Nasby, R. D.   +8 more
core  

Cellulose nanofiber paper as an ultra flexible nonvolatile memory [PDF]

Nagashima, K., Koga, H., Celano, U. et al. Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory. Sci Rep 4, 5532 (2014). https://doi.org/10.1038/srep05532.On the development of flexible electronics, a highly flexible nonvolatile memory ...
Koga, Hirotaka, Jurczak, Malgorzata, Celano, Umberto, Meng, Gang, Rahong, Sakon, He, Yong, Yanagida, Takeshi, Nogi, Masaya, Vandervorst, Wilfried, Nagashima, Kazuki, Zhuge, Fuwei, Kanai, Masaki, Kitaoka, Takuya, Boeck, Jo De   +13 more
core   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

FSL: Fast system launch through persistent computing with nonvolatile memory

, 2017
Next generation memory technologies, which we denote as new memory, have both nonvolatile and byte addressable properties. These characteristics are expected to bring changes to the conventional computer system structure.
Sam H. Noh, Hyeonho Song, Song, Hyeonho, Noh, Sam H.   +3 more
core   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS₂ Memory Transistor. [PDF]

Adv Sci (Weinh)
Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Jeong Y, Wang H, Tordi P, Hu YC, Tamayo A, Wu B, Ahn HS, Sofer Z, Jung JH, Bonini M, Samorì P.   +10 more
europepmc   +2 more sources

Ferroelectric deep trench capacitors based on Al:HfO2 for 3D nonvolatile memory applications

, 2022
4 S.Aiming for future nonvolatile memory applications the fabrication and electrical characterization of 3-dimensional trench capacitors based on ferroelectric HfO2 is reported.
Müller, Johannes, Sundqvist, Jonas, Seidel, Konrad, Weinreich, Wenke, Riedel, Stefan, Polakowski, Patrick, Rudolf, M.   +6 more
core   +1 more source

Azobenzene's Cross‐Scale Optics and Photonics: Molecular Photoswitching, Mesoscopic Material Motions, and Adaptive Devices

Advanced Materials, EarlyView.
Azobenzene photoswitches translate molecular‐scale E/Z photoisomerization into macroscopic material responses and device‐level photonic functions. This Review highlights how azobenzene research has evolved from molecular photochemistry to photoalignment, mass migration, photomechanics, and heat release, ultimately enabling holography, reconfigurable ...
Heeju Son, Soyul Kwak, Heerin Noh, Minsang Kim, Doyeon Noh, Subhayan Chakraborty, Jaewon Lee, YongDeok Cho, Kyeongsoo Kim, Taewoong Eom, Moonyoung Kim, Jangwon Kim, Hoyoung Lee, Soyoung Lee, Jaehun Kim, Grace G. D. Han, Shin‐Tson Wu, Stefano Oscurato, Arri Priimagi, Marina Saphiannikova, Seungwoo Lee   +20 more
wiley   +1 more source

Hardware Transactions in Nonvolatile Memory [PDF]

, 2015
Hardware transactional memory (HTM) implementations already provide a transactional abstraction at HW speed in multi-core systems. The imminent availability of mature byte-addressable, nonvolatile memory (NVM) will provide persistence at the speed of accessing main memory.
Hillel Avni, Eliezer Levy, Avi Mendelson
openaire   +1 more source

Polymer and organic nonvolatile memory devices

, 2010
Organic molecules and semiconductors have been proposed as active part of a large variety of nonvolatile memory devices, including resistors, diodes and transistors. In this review, we focus on electrically reprogrammable nonvolatile memories.
Noh, Y.Y., Muller, Robert, Yong-Young Noh, Heremans, Paul, Heremans, P., Müller, R., Kim, D.Y., Paul Heremans, Dong-Yu Kim, Gerwin H. Gelinck, Gelinck, G.H., Baeg, K.J., Kang-Jun Baeg, Noh, Yong-Young, Gelinck, Gerwin H., Kim, Dong-Yu, Robert Müller, Baeg, Kang-Jun   +17 more
core   +1 more source