Memristors based on trimethylsulfonium (phenanthroline)tetraiodobismuthate have been utilised as a nonlinear node in a delayed feedback reservoir. This system allowed an efficient classification of acoustic signals, namely differentiation of vocalisation of the brushtail possum (Trichosurus vulpecula).
Ewelina Cechosz +4 more
wiley +1 more source
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj +2 more
wiley +1 more source
Amphibian-inspired neuromorphic dynamic vision systems based on ferroelectric field-effect transistor. [PDF]
Zhai Y +9 more
europepmc +1 more source
Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh +3 more
wiley +1 more source
Proximity-Induced Ferroelectric Switching in Wurtzite/Fluorite Bilayers for High-Performance Ferroelectric Field-Effect Transistor. [PDF]
Kim KD +4 more
europepmc +1 more source
The systematic design of memristor‐based neural network is provided by analog conductance state parameters to accurately emulate the software‐based high‐resolution weight at discrete device level. The requirement of discrete analog conductance of memristor device is measured as ≈50 states with nonlinearity value of ≈0.142 within the deviation range of ...
Jingon Jang, Yoonseok Song, Sungjun Park
wiley +1 more source
Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison +4 more
wiley +1 more source
A New Back-End-Of-Line Ferroelectric Field-Effect Transistor Platform via Laser Processing. [PDF]
Kim SW +8 more
europepmc +1 more source
Physics‐Grounded Probabilistic Bits for Hardware‐Efficient Intelligent Inference and Optimization
Si–SiNx interface traps are harnessed as a complementary metal–oxide–semiconductor‐compatible source of controllable randomness for probabilistic bits. Pulse‐width‐programmed stochastic capture converts nanoscale defect dynamics into Boltzmann‐consistent binary outputs, while a physics‐based Simulation Program with Integrated Circuit Emphasis model ...
Dokyoung Lee +3 more
wiley +1 more source
Integrated In-Memory Sensor and Computing of Artificial Vision Based on Full-vdW Optoelectronic Ferroelectric Field-Effect Transistor. [PDF]
Wang P +8 more
europepmc +1 more source

