Results 81 to 90 of about 2,265 (156)

Infrared light gated MoS2 field effect transistor

, 2015
Molybdenum disulfide (MoS2) as a promising 2D material has attracted extensive attentions due to its unique physical, optical and electrical properties.
Wang, X, Zhang, F, Tang, CY, Dai, JY, Fang, H, Chai, Y, Chen, Y, Chan, HLW, Lin, Z, Li, Q, Yan, Q   +10 more
core   +1 more source

Switching Characteristics of Ferroelectric Transistor Inverters

, 2010
This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise ...
Ho, Fat D., MacLeod, Todd C., Laws, Crystal, Mitchell, Coey   +3 more
core  

Ferroelectric-gate carbon nanotube field effect transistor for non-volatile memory application

, 2014
Carbon nanotube field effect transistor has attracted much attention and is a promising candidate for next generation nanoelectronics. Significant hysteresis usually exists in its transfer characteristics between the forward and reverse gate bias sweeps,
Cheah, Jason Jun Wei
core  

N -type behavior of ferroelectric-gate carbon nanotube network transistor

, 2008
Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ...
Jun Wei Cheah, Li, Lain-Jong, Lee, Chun Wei, Wang, Junling, Ong, Hock Guan, Junling Wang, Yumeng Shi, Hock Guan Ong, Chun Wei Lee, Cheah, Jun Wei, Lain-Jong Li, Shi, Yumeng, Li, Lain Jong   +12 more
core   +1 more source

Characteristics of sub-100nm Ferroelectric Field Effect Transistor with High-k Buffer Layer

, 2008
The simulation work is carried out using two dimension device simulator to investigate the characteristics of sub-100nm ferroelectric field effect transistor (FeFET) with high-k material as the buffer layer.
Kang, Jinfeng, Honghua Xu, Yuncheng Song, Rui Jin, Song, Yuncheng, Ji, Min, Jinfeng Kang, Min Ji, Ruqi Han, Jin, Rui, Han, Ruqi, Liu, Xiaoyan, Xu, Honghua, Xiaoyan Liu   +13 more
core   +1 more source

Improved program mode for memory array based on ferroelectric-gate field-effect transistor

, 2006
An improved program mode for memory array based on ferroelectric field effect transistor (Fe-FET) is proposed. A SPICE macro-model for the transfer characteristics of Fe-FET devices, based on the Schmitt trigger circuit, is demonstrated and applied to ...
Kang, J.F., Du, G., R.q. Han, Y.y. Wang, Wang, Y.Y., T. Ma, Liu, X.Y., W.f. Li, Ma, T.P., G. Du, Li, W.F., X.y. Liu, J.f. Kang, Han, R.Q.   +13 more
core   +1 more source

Temperature Dependent Charge Transport Characteristics of Ferroelectric Organic Field Effect Transistors

, 2020
In recent decades, organic semiconductor materials have emerged as an attractive alternative to inorganic compounds for electronics applications. One application where organic semiconductor materials show particular potential is in the fabrication of ...
Benson, Jared C.
core  

Static Characteristics of the Ferroelectric Transistor Inverter

, 2010
The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits.
Ho, Fat D., MacLeond, Todd C., Laws, crystal, Mitchell, Cody   +3 more
core  

Coupled ferroelectric-anisotropic optoelectronic synapse for polarization-sensitive neuromorphic vision

Nature Communications
Polarization-sensitive photodetection and non-volatile memory are both vital for neuromorphic vision hardware but are rarely integrated within a single device.
Jiali Huo, Jinpeng Huo, Jing Gao, Lingqi Li, Thaw Tint Te Tun, Jin Peng, Haofei Zheng, Yufei Shi, Kah-Wee Ang   +8 more
doaj   +1 more source