Results 81 to 90 of about 15,745,352 (243)

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

Advanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi, Souta Kurogi, Tomoya Okuda, Riku Kikuchi, Yusuke Wakamoto, Kouei Kubota, Hikaru Sasaki, Kazuhisa Ikeda, Kanako Shojiki, Takahiro Kawamura, Toru Akiyama, Takehito Seki, Takuya Maeda   +12 more
wiley   +1 more source

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

Advanced Materials, EarlyView.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh, Alif Syafiq Kamarol Zaman, Muzhen Xu, Yuki Usami, Saptarshi Das, Hirofumi Tanaka   +5 more
wiley   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

State of the art and perspectives of graphene field-effect transistor [PDF]

, 2022
openAnalisi scientifica dei transistor a effetto di campo in grafene. L’elaborato segue lo sviluppo e il percorso di vita in ambito elettronico di questo conosciuto materiale dalle ottime potenzialità a prima vista, ma con diverse criticità e ...
CESCHIN, MATTEO
core  

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

Advanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald, Ali Nawaz, Amandeep Singh, Prashant Sonar   +3 more
wiley   +1 more source

Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrO_x/Al₂O₃ Gate Dielectrics

IEEE Access, 2020
A hydrogen-terminated diamond (H-diamond) Field effect transistor (FET) with a ferroelectric HfZrOx/Al2O3 stacked gate dielectric was demonstrated for the first time. The HfZrOx(16 nm)/Al2O3(4 nm) gate dielectric was grown by atomic layer deposition (ALD)
Kai Su, Zeyang Ren, Yue Peng, Jinfeng Zhang, Jincheng Zhang, Yachao Zhang, Qi He, Chunfu Zhang, Yue Hao   +8 more
doaj   +1 more source

Disturb‐Resilient and Wake‐up‐Free 2T‐MFMFET Array for Storage and Computing Applications

Advanced Materials Technologies, EarlyView.
A disturb‐resilient and wake‐up‐free 2T‐MFMFET array fabricated using a FeRAM‐compatible process demonstrates excellent uniformity, a large memory window, and 3‐bit multi‐level‐cell storage capability. A newly proposed hybrid in‐memory computing scheme further enables accurate multiply–accumulate operations with minimal refresh overhead, highlighting ...
Chen‐Yi Cho, Ming‐Hung Wu, Yu‐De Lin, Po‐Chun Yeh, Kai Ni, Wen‐Yueh Jang, Tuo‐Hung Hou   +6 more
wiley   +1 more source

Nondestructive Readout of Ferroelectric-Gate Field-Effect Transistor Memory With an Intermediate Electrode by Using an Improved Operation Method [PDF]

, 2008
We investigated the reading and writing of ferroelectric-gate field-effect transistor memory with an intermediate electrode (IF-FET) to achieve perfect nondestructive readouts.
Trinh, Bui Nguyen Quoc, Horita, Susumu
core   +1 more source

Toward Perception‐Native Electronic Skin: Bio‐Inspired In‐/Near‐Sensor and Neuromorphic Computing for Humanoid Robots

Advanced Materials Technologies, EarlyView.
Dense tactile streams from across the humanoid body converge on collide in a central wiring and data bottleneck. By relocating computation closer to and then into the skin itself, near‐ and in‐sensor architectures, together with neuromorphic computing, chart a path toward perception‐native electronic skin, in which the conversion of stimulus into ...
Mijin Kim, Chang‐Jae Beak, Jiyoung Park, Youngdo Jung, Sunjong Oh, Sin‐Hyung Lee, Bo‐Yeon Lee   +6 more
wiley   +1 more source

2-Bit/Cell Operation of Hf_0.5Zr_0.5O₂ Based FeFET Memory Devices for NAND Applications

IEEE Journal of the Electron Devices Society, 2019
The multilevel memory performances of ferroelectric field effect transistor (FeFET) with Hf0.5Zr0.5O2 (HZO) ferroelectric thin film are investigated. First, similar retention characteristics are observed for intermediate and saturated polarization states
Binjian Zeng, Min Liao, Qiangxiang Peng, Wenwu Xiao, Jiajia Liao, Shuaizhi Zheng, Yichun Zhou   +6 more
doaj   +1 more source