Results 11 to 20 of about 2,265 (156)

Low-power edge detection based on ferroelectric field-effect transistor [PDF]

Nature Communications
Edge detection is one of the most essential research hotspots in computer vision and has a wide variety of applications, such as image segmentation, target detection, and other high-level image processing technologies.
Jiajia Chen, Jiacheng Xu, Jiani Gu, Bowen Chen, Hongrui Zhang, Haoji Qian, Huan Liu, Rongzong Shen, Gaobo Lin, Xiao Yu, Miaomiao Zhang, Yi’an Ding, Yan Liu, Jianshi Tang, Huaqiang Wu, Chengji Jin, Genquan Han   +16 more
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Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure [PDF]

Advanced Science, 2022
To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory ...
Sungpyo Baek, Hyun Ho Yoo, Jae Hyeok Ju, Panithan Sriboriboon, Prashant Singh, Jingjie Niu, Jin‐Hong Park, Changhwan Shin, Yunseok Kim, Sungjoo Lee   +9 more
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The ferroelectric field-effect transistor with negative capacitance

npj Computational Materials, 2022
Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny.
I. Luk’yanchuk, A. Razumnaya, A. Sené, Y. Tikhonov, V. M. Vinokur   +4 more
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Investigation on the Negative Capacitance Field Effect Transistor with Dual Ferroelectric Region

Crystals, 2022
This paper proposes a new structure of the negative capacitance field effect transistor (NCFET), which features of the dual ferroelectric region (DFR) when compared to the conventional NCFET.
Jia-Fei Yao, Xue Han, Xin-Peng Zhang, Jin-Cheng Liu, Ming-Yuan Gu, Mao-Lin Zhang, Ke-Han Yu, Yu-Feng Guo   +7 more
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Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor

Nature Communications, 2023
Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications.
Zhongyunshen Zhu, Anton E. O. Persson, Lars-Erik Wernersson   +2 more
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Influence of charge accumulation at the grain boundary on the electrical behavior of a ferroelectric field-effect transistor

AIP Advances, 2018
A phase field method was used to investigate the influence of charge accumulation at the grain boundary on the electrical behavior of a ferroelectric field-effect transistor containing a polycrystalline gate.
W. X. Guo, P. F. Tan, X. P. Ouyang, B. Li, H. X. Guo, X. L. Zhong, J. B. Wang, F. Wang   +7 more
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Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors

Nanomaterials, 2020
The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-
Mircea Dragoman, Adrian Dinescu, Florin Nastase, Daniela Dragoman   +3 more
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Low-Power OR Logic Ferroelectric In-Situ Transistor Based on a CuInP₂S₆/MoS₂ Van Der Waals Heterojunction

Nanomaterials, 2021
Due to the limitations of thermodynamics, the Boltzmann distribution of electrons hinders the further reduction of the power consumption of field-effect transistors.
Kun Yang, Shulong Wang, Tao Han, Hongxia Liu   +3 more
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Ferroelectric Memory Based on Topological Domain Structures: A Phase Field Simulation

Crystals, 2022
The low storage density of ferroelectric thin film memory currently limits the further application of ferroelectric memory. Topologies based on controllable ferroelectric domain structures offer opportunities to develop microelectronic devices such as ...
Jing Huang, Pengfei Tan, Fang Wang, Bo Li   +3 more
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Van der Waals engineering of ferroelectric heterostructures for long-retention memory

Nature Communications, 2021
The memory retention for a ferroelectric field-effect transistor is limited by the depolarization effects and carrier charge trapping. Here, the authors fabricate a long-retention memory cell with a metal-ferroelectric-metal-insulator-semiconductor ...
Xiaowei Wang, Chao Zhu, Ya Deng, Ruihuan Duan, Jieqiong Chen, Qingsheng Zeng, Jiadong Zhou, Qundong Fu, Lu You, Song Liu, James H. Edgar, Peng Yu, Zheng Liu   +12 more
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