Results 11 to 20 of about 15,745,352 (243)

Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor

Nature Communications, 2023
Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications.
Zhongyunshen Zhu, Anton E. O. Persson, Lars-Erik Wernersson   +2 more
doaj   +2 more sources

Influence of charge accumulation at the grain boundary on the electrical behavior of a ferroelectric field-effect transistor

AIP Advances, 2018
A phase field method was used to investigate the influence of charge accumulation at the grain boundary on the electrical behavior of a ferroelectric field-effect transistor containing a polycrystalline gate.
W. X. Guo, P. F. Tan, X. P. Ouyang, B. Li, H. X. Guo, X. L. Zhong, J. B. Wang, F. Wang   +7 more
doaj   +2 more sources

An Extended Gate Field Effect Transistor (EGFET) pH Microsensor [PDF]

, 2021
Here, an extended – gate field effect transistor (EGFET) pH microsensor was developed for use in fast and sensitive pH measurement applications. The system consisted of two components; a pH sensitive modified gold electrode and a simple and cheap metal ...
İpek , Avcı, Mustafa, Şen, Merve, Oğuz   +2 more
core   +1 more source

Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET

Memories - Materials, Devices, Circuits and Systems, 2023
In this article, the impact of interfacial fixed charges on the memory window (MW) of HfO2-based ferroelectric field-effect transistor (FeFET) is investigated using technology computer-aided design (TCAD) device simulations.
Masud Rana Sk, Shubham Pande, Franz Müller, Yannick Raffel, Maximilian Lederer, Luca Pirro, Sven Beyer, Konrad Seidel, Thomas Kämpfe, Sourav De, Bhaswar Chakrabarti   +10 more
doaj   +1 more source

A Silicon Nanowire Ferroelectric Field‐Effect Transistor

Advanced Electronic Materials, 2020
The design and characterization of a Schottky‐type ferroelectric field‐effect transistor based on a nominally undoped silicon nanowire are reported. The nanowire transistor is fabricated by top‐down technology starting from a silicon‐on insulator wafer ...
Violetta Sessi, Maik Simon, Halid Mulaosmanovic, Darius Pohl, Markus Loeffler, Tom Mauersberger, Franz P. G. Fengler, Terence Mittmann, Claudia Richter, Stefan Slesazeck, Thomas Mikolajick, Walter M. Weber   +11 more
doaj   +1 more source

Impact of Series-Connected Ferroelectric Capacitor in HfO₂-Based Ferroelectric Field-Effect Transistors for Memory Application

IEEE Journal of the Electron Devices Society, 2020
In this work, we demonstrated a HfO2-based ferroelectric field-effect transistor (FeFET) in series with a HfAlO ferroelectric capacitor for memory application and further investigated the impact of the ferroelectric capacitor with different thicknesses ...
Wei-Dong Liu, Zi-You Huang, Jun Ma, Zhi-Wei Zheng, Chun-Hu Cheng   +4 more
doaj   +1 more source

Ferroelectric Tuning of ZnO Ultraviolet Photodetectors

Nanomaterials, 2022
The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection ...
Haowei Xie, Chenxu Kang, Muhammad Ahsan Iqbal, Xiaoliang Weng, Kewen Wu, Wei Tang, Lu Qi, Yu-Jia Zeng   +7 more
doaj   +1 more source

Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage

InfoMat, 2022
Ferroelectric memory is a promising candidate for next‐generation nonvolatile memory owing to its outstanding performance such as low power consumption, fast speed, and high endurance. However, the ferroelectricity of conventional ferroelectric materials
Yu‐Ting Huang, Nian‐Ke Chen, Zhen‐Ze Li, Xue‐Peng Wang, Hong‐Bo Sun, Shengbai Zhang, Xian‐Bin Li   +6 more
doaj   +1 more source

Processing organic semiconductors [PDF]

, 2010
PhDIn recent years, there has been a considerable interest in organic semiconducting materials due to their potential to enable, amongst other things, low-cost flexible opto-electronic applications, such as large-area integrated circuitry boards, light ...
Baklar, Mohammed Adnan
core   +4 more sources

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS₂ Memory Transistor. [PDF]

Adv Sci (Weinh)
Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Jeong Y, Wang H, Tordi P, Hu YC, Tamayo A, Wu B, Ahn HS, Sofer Z, Jung JH, Bonini M, Samorì P.   +10 more
europepmc   +2 more sources