Results 41 to 50 of about 751 (187)

FeFET Multi-Bit Content-Addressable Memories for In-Memory Nearest Neighbor Search

, 2022
25652576Nearest neighbor (NN) search computations are at the core of many applications such as few-shot learning, classification, and hyperdimensional computing. As such, efficient hardware support for NN search is highly desired.
Müller, F., Yin, X., Laguna, A.F.B., Niemier, M., Sharifi, M.M., Kämpfe, T., Hu, X.S., Kazemi, A.   +7 more
core   +1 more source

Thermally Engineered Sodium‐Embedded Alumina with Programmable Synaptic Plasticity for Neuromorphic Transistors

Advanced Functional Materials, EarlyView.
A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon, Jaeyeon Kim, Dong Yeon Won, Saeyoun Park, Youngjae Yoo, Seongchan Kim, Dong‐Hwan Kim, Jeong Ho Cho   +7 more
wiley   +1 more source

28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview

Memories - Materials, Devices, Circuits and Systems, 2023
In this invited article we present a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric field effect transistor devices for synaptic applications. The devices under test were fabricated on 300 mm wafers at GlobalFoundries.
Yannick Raffel, Franz Müller, Sunanda Thunder, Masud Rana Sk, Maximilian Lederer, Luca Pirro, Sven Beyer, Konrad Seidel, Bhaswar Chakrabarti, Thomas Kämpfe, Sourav De   +10 more
doaj   +1 more source

FeFET-based Binarized Neural Networks Under Temperature-dependent Bit Errors

, 2021
Ferroelectric FET (FeFET) is a highly promising emerging non-volatile memory (NVM) technology, especially for binarized neural network (BNN) inference on the low-power edge.
Gupta, Aniket, Henkel, Jorg, Amrouch, Hussam, Yayla, Mikail, Chen, Kuan-Hsun, Morik, Katharina, Buschjager, Sebastian, Chen, Jian-Jia   +7 more
core   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application

IEEE Journal of the Electron Devices Society, 2020
We have fabricated and demonstrated ultrathin In-Ga-Zn-O (IGZO) channel ferroelectric HfO2 field effect transistor (FET) with memory operation. Ultrathin-body IGZO ferroelectric FET (FeFET) shows high mobility and nearly ideal subthreshold slop with ...
Fei Mo, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi   +6 more
doaj   +1 more source

Effects of Charge Trapping on Memory Characteristics for HfO₂-Based Ferroelectric Field Effect Transistors

Nanomaterials, 2023
A full understanding of the impact of charge trapping on the memory window (MW) of HfO2-based ferroelectric field effect transistors (FeFETs) will permit the design of program and erase protocols, which will guide the application of these devices and ...
Jianjian Wang, Jinshun Bi, Yannan Xu, Gang Niu, Mengxin Liu, Viktor Stempitsky   +5 more
doaj   +1 more source

Designable van der Waals Crystal for Artificial Neuronal Cell Mimicking

Advanced Materials, EarlyView.
Designable van der Waals crystal has been demonstrated for device‐scale neuronal cell mimicking. The structural similarity between ion‐channel in biological membranes and layered vdW lattices is realized with nano‐crystallization via Ar + H2S plasma sulfurization.
Jinhyoung Lee, Gunhyoung Kim, Dongho Lee, Seowoo Son, Hyunho Seok, Sihoon Son, Hyunbin Choi, Geonwook Kim, Geumji Back, Hyunkyu Kim, Chaerin Park, Junmin Ahn, Seongyun Je, Chaeyoung Im, Junil Cho, Magdalena Grzeszczyk, Seongho Kim, Eunseo Go, Hyunwoo Shim, Donghwan Choi, Muyoung Kim, Hyoeng‐U. Kim, Won‐Jun Jang, Taesung Kim   +23 more
wiley   +1 more source

Ferroelectric Dynamic‐Field‐Driven Nucleation and Growth Model for Predictive Materials‐To‐Circuit Co‐Design

Advanced Materials, EarlyView.
This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang, Soohyeon Kim, Tony Chiang, Megan K. Lenox, Ian Mercer, John J. Plombon, Jon‐Paul Maria, Jon F. Ihlefeld, Wenhao Sun, Wei Lu, John T. Heron   +10 more
wiley   +1 more source

Self‐Curable Synaptic Ferroelectric FET Arrays for Neuromorphic Convolutional Neural Network

Advanced Science, 2023
With the recently increasing prevalence of deep learning, both academia and industry exhibit substantial interest in neuromorphic computing, which mimics the functional and structural features of the human brain.
Wonjun Shin, Jiyong Im, Ryun‐Han Koo, Jaehyeon Kim, Ki‐Ryun Kwon, Dongseok Kwon, Jae‐Joon Kim, Jong‐Ho Lee, Daewoong Kwon   +8 more
doaj   +1 more source