Results 51 to 60 of about 751 (187)

Engineering of Crystal and Domain Structures in Epitaxial Y:HfO2 Thin Films by YSZ Substrate Miscut

Advanced Science, EarlyView.
We investigate how YSZ substrate miscut influences crystal structure and domain formation in epitaxial Y‐doped HfO2 thin films. Using magnetron sputtering, high‐resolution X‐ray diffraction, atomic‐resolution scanning transmission electron microscopy, and first‐principles calculations, we systematically examine the characteristics of thickness‐ and ...
Jun Young Lee, Hyung‐Jin Choi, Kun Hee Ye, Haneul Choi, Byeong‐hyeon Lee, Min‐Seok Kim, Dong‐Hun Han, June Hyuk Lee, Sung Ok Won, Tae Heon Kim, Hye Jung Chang, Jung‐Hae Choi, Seung‐Hyub Baek   +12 more
wiley   +1 more source

2-Bit/Cell Operation of Hf_0.5Zr_0.5O₂ Based FeFET Memory Devices for NAND Applications

IEEE Journal of the Electron Devices Society, 2019
The multilevel memory performances of ferroelectric field effect transistor (FeFET) with Hf0.5Zr0.5O2 (HZO) ferroelectric thin film are investigated. First, similar retention characteristics are observed for intermediate and saturated polarization states
Binjian Zeng, Min Liao, Qiangxiang Peng, Wenwu Xiao, Jiajia Liao, Shuaizhi Zheng, Yichun Zhou   +6 more
doaj   +1 more source

First demonstration of in-memory computing crossbar using multi-level Cell FeFET

Nature Communications, 2023
Advancements in AI led to the emergence of in-memory-computing architectures as a promising solution for the associated computing and memory challenges.
Taha Soliman, Swetaki Chatterjee, Nellie Laleni, Franz Müller, Tobias Kirchner, Norbert Wehn, Thomas Kämpfe, Yogesh Singh Chauhan, Hussam Amrouch   +8 more
doaj   +1 more source

FeFET Based Nonvolatile TCAM and DRAM Development [PDF]

, 2018
Ferroelectric Field Effect Transistor (FeFET) is a promising nonvolatile device which provides high integration density, fast programming speed, and excellent CMOS compatibility.
Bayram, Ismail
core  

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Impact of Series-Connected Ferroelectric Capacitor in HfO₂-Based Ferroelectric Field-Effect Transistors for Memory Application

IEEE Journal of the Electron Devices Society, 2020
In this work, we demonstrated a HfO2-based ferroelectric field-effect transistor (FeFET) in series with a HfAlO ferroelectric capacitor for memory application and further investigated the impact of the ferroelectric capacitor with different thicknesses ...
Wei-Dong Liu, Zi-You Huang, Jun Ma, Zhi-Wei Zheng, Chun-Hu Cheng   +4 more
doaj   +1 more source

Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage

Electronic Materials, 2021
A multi-level cell (MLC) operation as a 1–3 bit/cell of the FeFET emerging memory is reported by utilizing optimized Si doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based on ferroelectric laminates.
Tarek Ali, Kati Kühnel, Ricardo Olivo, David Lehninger, Franz Müller, Maximilian Lederer, Matthias Rudolph, Sebastian Oehler, Konstantin Mertens, Raik Hoffmann, Katrin Zimmermann, Philipp Schramm, Joachim Metzger, Robert Binder, Malte Czernohorsky, Thomas Kämpfe, Konrad Seidel, Johannes Müller, Jan Van Houdt, Lukas M. Eng   +19 more
doaj   +1 more source

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

Advanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo, Seokjin Oh, Minah Park, Jong Min Song, Hongseung Lee, Seohyeon Park, Sojin Jung, Seongbin Lim, Soohyun Lim, Dongsun Shin, Ji Won Heo, TaeWan Kim, Hagyoul Bae   +12 more
wiley   +1 more source

Effect of Substrate Implant Tuning on the Performance of MFIS Silicon Doped Hafnium Oxide (HSO) FeFET Memory

, 2022
S.43-46Improved characteristics of ferroelectric Si:HfO 2 (HSO) MFIS FeFETs by tuning the substrate implant doping concentration is reported. Shallow implant doping gives the possibility to control the FeFET readout range, whereas the deep implant ...
Steinke, P., Eng, L.M., Houdt, J. van, Czernohorsky, M., Ali, T., Hoffmann, R., Duhan, P., Lehninger, D., Seidel, K., Rudolph, M., Müller, J., Kühnel, K., Mertens, K.   +12 more
core   +1 more source

All-in-memory brain-inspired computing using FeFET synapses [PDF]

, 2023
The separation of computing units and memory in the computer architecture mandates energy-intensive data transfers creating the von Neumann bottleneck. This bottleneck is exposed at the application level by the steady growth of IoT and data-centric deep ...
Nguyen, Hong L. G., Amrouch, Hussam, Genssler, Paul R., Thomann, Simon   +3 more
core   +1 more source