Results 51 to 60 of about 1,280 (239)
Comprehensive Modeling of Switching Behaviour in BEOL FeFET for Monolithic 3D Integration
, 2023 We have developed a comprehensive modeling framework to explain the switching characteristics of BEOL-compatible FeFET with an amorphous IGZO channel.
Hussam Amrouch (15351787) +5 more
core +1 more source
Российский технологический журналObjectives. The aim of this study is to develop and demonstrate an effective method for obtaining large-area, high-quality monolayers of molybdenum disulfide (MoS2) on the surface of ferroelectric lead zirconate titanate (PZT) films which exhibit ...
E. I. Zhemerov +4 more
doaj +1 more source
Self‐Curable Synaptic Ferroelectric FET Arrays for Neuromorphic Convolutional Neural Network
Advanced Science, 2023 With the recently increasing prevalence of deep learning, both academia and industry exhibit substantial interest in neuromorphic computing, which mimics the functional and structural features of the human brain.
Wonjun Shin +8 more
doaj +1 more source
Disturb‐Resilient and Wake‐up‐Free 2T‐MFMFET Array for Storage and Computing Applications
Advanced Materials Technologies, EarlyView.A disturb‐resilient and wake‐up‐free 2T‐MFMFET array fabricated using a FeRAM‐compatible process demonstrates excellent uniformity, a large memory window, and 3‐bit multi‐level‐cell storage capability. A newly proposed hybrid in‐memory computing scheme further enables accurate multiply–accumulate operations with minimal refresh overhead, highlighting ...
Chen‐Yi Cho +6 more
wiley +1 more source
2-Bit/Cell Operation of Hf0.5Zr0.5O2 Based FeFET Memory Devices for NAND Applications
IEEE Journal of the Electron Devices Society, 2019 The multilevel memory performances of ferroelectric field effect transistor (FeFET) with Hf0.5Zr0.5O2 (HZO) ferroelectric thin film are investigated. First, similar retention characteristics are observed for intermediate and saturated polarization states
Binjian Zeng +6 more
doaj +1 more source
Engineering of Crystal and Domain Structures in Epitaxial Y:HfO2 Thin Films by YSZ Substrate Miscut
Advanced Science, EarlyView.We investigate how YSZ substrate miscut influences crystal structure and domain formation in epitaxial Y‐doped HfO2 thin films. Using magnetron sputtering, high‐resolution X‐ray diffraction, atomic‐resolution scanning transmission electron microscopy, and first‐principles calculations, we systematically examine the characteristics of thickness‐ and ...
Jun Young Lee +12 more
wiley +1 more source
Modeling and Investigating Total Ionizing Dose Impact on FeFET
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023 This article presents a novel, simulation-based study of the long-term impact of X-ray irradiation on the ferroelectric field effect transistor (FeFET). The analysis is conducted through accurate multiphysics technology CAD (TCAD) simulations and radiation impact on the two FeFET memory states—high-voltage threshold (HVT) and low-voltage ...
Munazza Sayed, Kai Ni, Hussam Amrouch
openaire +4 more sources
IEEE Journal of the Electron Devices Society, 2020 In this work, we demonstrated a HfO2-based ferroelectric field-effect transistor (FeFET) in series with a HfAlO ferroelectric capacitor for memory application and further investigated the impact of the ferroelectric capacitor with different thicknesses ...
Wei-Dong Liu +4 more
doaj +1 more source
First demonstration of in-memory computing crossbar using multi-level Cell FeFET
Nature Communications, 2023 Advancements in AI led to the emergence of in-memory-computing architectures as a promising solution for the associated computing and memory challenges.
Taha Soliman +8 more
doaj +1 more source
Electronic Materials, 2021 A multi-level cell (MLC) operation as a 1–3 bit/cell of the FeFET emerging memory is reported by utilizing optimized Si doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based on ferroelectric laminates.
Tarek Ali +19 more
doaj +1 more source