Results 61 to 70 of about 751 (187)

Temperature‐Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS‐Integrated Spintronic Chips

Advanced Science, EarlyView.
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang, Chuanpeng Jiang, Zhaohao Wang, Zhengyi Hou, Zhongkui Zhang, Yuanfu Zhao, Hong‐xi Liu, Weisheng Zhao   +7 more
wiley   +1 more source

Monolithic 3D Oscillatory Ising Machine Using Reconfigurable FeFET Routing for Large‐Scalability and Low‐Power Consumption

Advanced Science
Ising machines are attractive for efficiently solving NP‐hard combinatorial optimization problems (COPs). In this work, a scalable monolithic‐3D (M3D) oscillatory Ising machine (OIM) is proposed using ferroelectric field‐effect transistors (FeFETs ...
Joon Pyo Kim, Song‐Hyeon Kuk, Hyun Wook Kim, Jaeyong Jeong, Juhyuk Park, Bong Ho Kim, Jongmin Kim, Aida Todri‐Sanial, Sanghyeon Kim   +8 more
doaj   +1 more source

Ferroelectric-Metal Field-Effect Transistor With Recessed Channel for 1T-DRAM Application

IEEE Journal of the Electron Devices Society, 2022
The ferroelectric-metal field-effect transistor with recessed channel (RC-FeMFET) is proposed for one transistor dynamic random-access memory (1T-DRAM). Through technology computer-aided design (TCAD) simulations, the effects of inter-metal insertion on ...
Kitae Lee, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon   +4 more
doaj   +1 more source

Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology

, 2022
8184Recently, hafnium oxide based ferroelectric memories gained great attention due to good scalability, high speed operation, and low power consumption. In contrast to the FRAM concept, the FeFET offers non-destructive read-out. However, the integration
Mähne, H., Bernert, K., Lehninger, David, Shen, Yukai, Heinig, Andreas, Revello Olivo, Ricardo Orlando, Thiem, S., Ali, Tarek Nadi Ismail, Biedermann, Kati, Kämpfe, Thomas, Lederer, Maximilian, Hoffmann, Raik, Landwehr, Matthias, Wang, Defu, Seidel, Konrad, Mertens, Konstantin   +15 more
core   +1 more source

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices

Advanced Science, EarlyView.
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen, Yong‐Jyun Wang, Zi‐Qin Hong, Chien‐Hua Wang, Yi‐Ning Wang, Jia De Cheng, Chun‐Wei Huang, Ying‐Hao Chu, Wen‐Wei Wu   +8 more
wiley   +1 more source

Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems

Advanced Electronic Materials
The discovery of ferroelectricity in hafnium oxide has propelled ferroelectric devices to the forefront of nanoelectronics, offering distinct advantages over alternative technologies.
David Lehninger, Franz Müller, Yannick Raffel, Shouzhuo Yang, Markus Neuber, Sukhrob Abdulazhanov, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer   +8 more
doaj   +1 more source

Comparative Analysis and Energy-Efficient Write Scheme of Ferroelectric FET-Based Memory Cells

IEEE Access, 2021
The ferroelectric field-effect transistor (FeFET) is one of the most promising candidates for emerging nonvolatile memory devices owing to its low write energy and high $I_{\mathrm {ON}}/I_{\mathrm {OFF}}$ ratio.
Dong Han Ko, Tae Woo Oh, Sehee Lim, Sekeon Kim, Seong-Ook Jung   +4 more
doaj   +1 more source

Demonstration of Differential Mode FeFET-Array for multi-precision storage and IMC applications

, 2023
Harnessing multibit precision in non-volatile memory (NVM) based synaptic core can accelerate multiply and accumulate (MAC) operation of deep neural network (DNN).
Raffel, Yannick, Wu, Tian-Li, Ali, Tarek, Kingra, Sandeep Kaur, Beyer, Sven, Dünkel, Stefan, Müller, Franz, De, Sourav, Kämpfe, Thomas, Parmar, Vivek, Lederer, Maximilian, Seidel, Konrad, Hsuen, Jing-Hua, Suri, Manan M.K.   +13 more
core   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Evaluation of Bulk and SOI FeFET Architecture for Non-Volatile Memory Applications

IEEE Journal of the Electron Devices Society, 2019
The stress induced by the capping electrode is critical to stabilizing the ferroelectric phase in Si-doped HfO2 which is being actively explored for embedded non-volatile memory applications. While TiN is commonly used as the electrode of choice owing to
Antik Mallick, Nikhil Shukla
doaj   +1 more source