Results 61 to 70 of about 1,280 (239)

FeFET Based Nonvolatile TCAM and DRAM Development [PDF]

, 2018
Ferroelectric Field Effect Transistor (FeFET) is a promising nonvolatile device which provides high integration density, fast programming speed, and excellent CMOS compatibility.
Bayram, Ismail
core  

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems

Advanced Electronic Materials
The discovery of ferroelectricity in hafnium oxide has propelled ferroelectric devices to the forefront of nanoelectronics, offering distinct advantages over alternative technologies.
David Lehninger, Franz Müller, Yannick Raffel, Shouzhuo Yang, Markus Neuber, Sukhrob Abdulazhanov, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer   +8 more
doaj   +1 more source

Ferroelectric-Metal Field-Effect Transistor With Recessed Channel for 1T-DRAM Application

IEEE Journal of the Electron Devices Society, 2022
The ferroelectric-metal field-effect transistor with recessed channel (RC-FeMFET) is proposed for one transistor dynamic random-access memory (1T-DRAM). Through technology computer-aided design (TCAD) simulations, the effects of inter-metal insertion on ...
Kitae Lee, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon   +4 more
doaj   +1 more source

High-Mobility and Reliability Ultra-Thin-Channel Oxide Semiconductor Field-Effect Transistors for Chip-Interconnect-Embedded Logic and Ferroelectric Memory. [PDF]

Adv Mater
BEOL‐compatible bilayer heterojunction oxide channel dual‐mode, memory‐logic ferroelectric transistor is fabricated to address long‐standing challenges of mobility and threshold voltage trade‐off by suppressing interfacial defects. This approach not only advances oxide semiconductors toward reliable high‐performance BEOL transistors but also opens new ...
Chen CK, Hooda S, Sivan M, Wan Q, Villena MA, Beltrando B, Xu Z, Fang Z, Zamburg E, Roldán JB, Larcher L, Thareja G, Thean AV.   +12 more
europepmc   +2 more sources

Polarization Dynamics in Ferroelectrics: Insights Enabled by Machine Learning Molecular Dynamics

Advanced Science, EarlyView.
Machine learning molecular dynamics is presented as a route to capture polarization switching, domain wall kinetics, topological polar textures, and polar mechanical coupling beyond the limits of conventional atomistic methods. This Perspective surveys recent progress and identifies key methodological directions, including long‐range electrostatics ...
Dongyu Bai, Ri He, Junxian Liu, Liangzhi Kou   +3 more
wiley   +1 more source

Effect of Substrate Implant Tuning on the Performance of MFIS Silicon Doped Hafnium Oxide (HSO) FeFET Memory

, 2022
S.43-46Improved characteristics of ferroelectric Si:HfO 2 (HSO) MFIS FeFETs by tuning the substrate implant doping concentration is reported. Shallow implant doping gives the possibility to control the FeFET readout range, whereas the deep implant ...
Steinke, P., Eng, L.M., Houdt, J. van, Czernohorsky, M., Ali, T., Hoffmann, R., Duhan, P., Lehninger, D., Seidel, K., Rudolph, M., Müller, J., Kühnel, K., Mertens, K.   +12 more
core   +1 more source

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

Advanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim, Shinhyeong Lee, Hyojun Choi, Minseung Park, Hyunah Cho, Min Hyuk Park, Yunseok Kim   +6 more
wiley   +1 more source

Evaluation of Bulk and SOI FeFET Architecture for Non-Volatile Memory Applications

IEEE Journal of the Electron Devices Society, 2019
The stress induced by the capping electrode is critical to stabilizing the ferroelectric phase in Si-doped HfO2 which is being actively explored for embedded non-volatile memory applications. While TiN is commonly used as the electrode of choice owing to
Antik Mallick, Nikhil Shukla
doaj   +1 more source

Triple‐Level Content‐Addressable Vertical NAND Flash Memory

Advanced Science, EarlyView.
Commercial triple‐level‐cell V‐NAND flash memory is transformed into a compact content‐addressable memory by directly exploiting its eight threshold‐voltage states. A parity‐split search scheme preserves storage density while enabling reliable multi‐level and don't‐care matching. Parallel word‐line search delivers up to 24‐fold higher throughput and 54.
Sung‐Ho Park, Jiseong Im, Yeongheon Yang, Ryun‐Han Koo, Jonghyun Ko, Mingyun Oh, Dongbeen Shin, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source