Results 1 to 10 of about 2,381 (268)

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure [PDF]

Advanced Science, 2022
To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory ...
Sungpyo Baek, Hyun Ho Yoo, Jae Hyeok Ju, Panithan Sriboriboon, Prashant Singh, Jingjie Niu, Jin‐Hong Park, Changhwan Shin, Yunseok Kim, Sungjoo Lee   +9 more
doaj   +4 more sources

The ferroelectric field-effect transistor with negative capacitance

npj Computational Materials, 2022
Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny.
I. Luk’yanchuk, A. Razumnaya, A. Sené, Y. Tikhonov, V. M. Vinokur   +4 more
doaj   +4 more sources

Low-power edge detection based on ferroelectric field-effect transistor [PDF]

Nature Communications
Edge detection is one of the most essential research hotspots in computer vision and has a wide variety of applications, such as image segmentation, target detection, and other high-level image processing technologies.
Jiajia Chen, Jiacheng Xu, Jiani Gu, Bowen Chen, Hongrui Zhang, Haoji Qian, Huan Liu, Rongzong Shen, Gaobo Lin, Xiao Yu, Miaomiao Zhang, Yi’an Ding, Yan Liu, Jianshi Tang, Huaqiang Wu, Chengji Jin, Genquan Han   +16 more
doaj   +3 more sources

Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor

Nature Communications, 2023
Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications.
Zhongyunshen Zhu, Anton E. O. Persson, Lars-Erik Wernersson   +2 more
doaj   +5 more sources

Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors [PDF]

Nanomaterials, 2020
The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-
Mircea Dragoman, Adrian Dinescu, Florin Nastase, Daniela Dragoman   +3 more
doaj   +4 more sources

A Silicon Nanowire Ferroelectric Field‐Effect Transistor [PDF]

Advanced Electronic Materials, 2020
The design and characterization of a Schottky‐type ferroelectric field‐effect transistor based on a nominally undoped silicon nanowire are reported. The nanowire transistor is fabricated by top‐down technology starting from a silicon‐on insulator wafer ...
Violetta Sessi, Maik Simon, Halid Mulaosmanovic, Darius Pohl, Markus Loeffler, Tom Mauersberger, Franz P. G. Fengler, Terence Mittmann, Claudia Richter, Stefan Slesazeck, Thomas Mikolajick, Walter M. Weber   +11 more
doaj   +2 more sources

Ferroelectric field effect transistors: Progress and perspective [PDF]

APL Materials, 2021
Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation devices as they can serve as a synaptic device for neuromorphic implementation and a one-transistor (1T) for achieving high integration.
Jae Young Kim, Min-Ju Choi, Ho Won Jang
doaj   +2 more sources

Nonvolatile ferroelectric field-effect transistors [PDF]

Nature Communications, 2020
AbstractFuture data-intensive applications will have integrated circuit architectures combining energy-efficient transistors, high-density data storage and electro-optic sensing arrays in a single chip to perform in situ processing of captured data.
Xiaojie Chai, Jun Jiang, Qinghua Zhang, Xu Hou, Fanqi Meng, Jie Wang, Lin Gu, David Wei Zhang, An Quan Jiang   +8 more
openaire   +3 more sources

Low-Power OR Logic Ferroelectric In-Situ Transistor Based on a CuInP₂S₆/MoS₂ Van Der Waals Heterojunction

Nanomaterials, 2021
Due to the limitations of thermodynamics, the Boltzmann distribution of electrons hinders the further reduction of the power consumption of field-effect transistors.
Kun Yang, Shulong Wang, Tao Han, Hongxia Liu   +3 more
doaj   +1 more source

A ferroelectric semiconductor field-effect transistor [PDF]

Nature Electronics, 2019
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile memory technology, but suffer from short retention times, which limits their wider application.
Mengwei Si, Atanu K. Saha, Shengjie Gao, Gang Qiu, Jingkai Qin, Yuqin Duan, Jie Jian, Chang Niu, Haiyan Wang, Wenzhuo Wu, Sumeet K. Gupta, Peide D. Ye   +11 more
openaire   +2 more sources