Results 1 to 10 of about 15,744,163 (247)

The ferroelectric field-effect transistor with negative capacitance

npj Computational Materials, 2022
Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny.
I. Luk’yanchuk, A. Razumnaya, A. Sené, Y. Tikhonov, V. M. Vinokur   +4 more
doaj   +4 more sources

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Advanced Science, 2022
To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory ...
Sungpyo Baek, Hyun Ho Yoo, Jae Hyeok Ju, Panithan Sriboriboon, Prashant Singh, Jingjie Niu, Jin‐Hong Park, Changhwan Shin, Yunseok Kim, Sungjoo Lee   +9 more
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A Silicon Nanowire Ferroelectric Field‐Effect Transistor [PDF]

Advanced Electronic Materials, 2020
The design and characterization of a Schottky‐type ferroelectric field‐effect transistor based on a nominally undoped silicon nanowire are reported. The nanowire transistor is fabricated by top‐down technology starting from a silicon‐on insulator wafer ...
Violetta Sessi, Maik Simon, Halid Mulaosmanovic, Darius Pohl, Markus Loeffler, Tom Mauersberger, Franz P. G. Fengler, Terence Mittmann, Claudia Richter, Stefan Slesazeck, Thomas Mikolajick, Walter M. Weber   +11 more
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Ferroelectric field effect transistors: Progress and perspective [PDF]

APL Materials, 2021
Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation devices as they can serve as a synaptic device for neuromorphic implementation and a one-transistor (1T) for achieving high integration.
Jae Young Kim, Min-Ju Choi, Ho Won Jang
doaj   +2 more sources

Nonvolatile ferroelectric field-effect transistors [PDF]

Nature Communications, 2020
AbstractFuture data-intensive applications will have integrated circuit architectures combining energy-efficient transistors, high-density data storage and electro-optic sensing arrays in a single chip to perform in situ processing of captured data.
Xiaojie Chai, Jun Jiang, Qinghua Zhang, Xu Hou, Fanqi Meng, Jie Wang, Lin Gu, David Wei Zhang, An Quan Jiang   +8 more
openaire   +3 more sources

Low-Power OR Logic Ferroelectric In-Situ Transistor Based on a CuInP₂S₆/MoS₂ Van Der Waals Heterojunction

Nanomaterials, 2021
Due to the limitations of thermodynamics, the Boltzmann distribution of electrons hinders the further reduction of the power consumption of field-effect transistors.
Kun Yang, Shulong Wang, Tao Han, Hongxia Liu   +3 more
doaj   +1 more source

A ferroelectric semiconductor field-effect transistor [PDF]

Nature Electronics, 2019
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile memory technology, but suffer from short retention times, which limits their wider application.
Mengwei Si, Atanu K. Saha, Shengjie Gao, Gang Qiu, Jingkai Qin, Yuqin Duan, Jie Jian, Chang Niu, Haiyan Wang, Wenzhuo Wu, Sumeet K. Gupta, Peide D. Ye   +11 more
openaire   +2 more sources

Graphene Field-Effect Transistors with Ferroelectric Gating [PDF]

Physical Review Letters, 2010
Recent experiments on ferroelectric gating have introduced a novel functionality, i.e. nonvolatility, in graphene field effect transistors. A comprehensive understanding in the non-linear, hysteretic ferroelectric gating and an effective way to control it are still absent.
Zheng, Y., Ni, G.-X., Toh, C.-T., Tan, C.-Y., Yao, K., Özyilmaz, B.   +5 more
openaire   +3 more sources

Ferroelectric Memory Based on Topological Domain Structures: A Phase Field Simulation

Crystals, 2022
The low storage density of ferroelectric thin film memory currently limits the further application of ferroelectric memory. Topologies based on controllable ferroelectric domain structures offer opportunities to develop microelectronic devices such as ...
Jing Huang, Pengfei Tan, Fang Wang, Bo Li   +3 more
doaj   +1 more source

Van der Waals engineering of ferroelectric heterostructures for long-retention memory

Nature Communications, 2021
The memory retention for a ferroelectric field-effect transistor is limited by the depolarization effects and carrier charge trapping. Here, the authors fabricate a long-retention memory cell with a metal-ferroelectric-metal-insulator-semiconductor ...
Xiaowei Wang, Chao Zhu, Ya Deng, Ruihuan Duan, Jieqiong Chen, Qingsheng Zeng, Jiadong Zhou, Qundong Fu, Lu You, Song Liu, James H. Edgar, Peng Yu, Zheng Liu   +12 more
doaj   +1 more source