Results 31 to 40 of about 2,381 (268)

Variability Study of Ferroelectric Field-Effect Transistors Towards 7nm Technology Node

IEEE Journal of the Electron Devices Society, 2021
The random variation sources have a significant influence on the performance of ferroelectric field-effect transistor (FeFET). In this work, comparative analysis on the process variation induced variability of FeFET towards a 7 nm technology node has ...
Gihun Choe, Shimeng Yu
doaj   +1 more source

Ferroelectric Pb(Zr0.52Ti0.48)/SiC field-effect transistor

, 2003
Nonvolatile operation of ferroelectric gate field-effect transistors in silicon carbide (SiC) is demonstrated. Depletion mode transistors have been realized by forming a Pb(Zr0.52Ti0.48)O-3/Al2O3 gate stack on n-type epitaxial channel layer and p-type ...
Koo, S. M., Grishin, Alexander M.,, Zetterling, Carl-Mikael,, Sang-Mo Koo, Mikael Östling, Östling, Mikael,, Sergey Khartsev, Alex Grishin, Carl-Mikael Zetterling, Khartsev, Sergiy,   +9 more
core   +1 more source

Ferroelectric field effect transistors for electronics and optoelectronics

Applied Physics Reviews, 2023
Ferroelectric materials have shown great value in the modern semiconductor industry and are considered important function materials due to their high dielectric constant and tunable spontaneous polarization. A ferroelectric field effect transistor (FeFET) is a field effect transistor (FET) with ferroelectric polarization field introduced to regulate ...
Hanxue Jiao, Xudong Wang, Shuaiqin Wu, Yan Chen, Junhao Chu, Jianlu Wang   +5 more
openaire   +1 more source

A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric

Solids, 2023
This study investigates the electrical characteristics observed in n-channel and p-channel ferroelectric field effect transistor (FeFET) devices fabricated through a similar process flow with 10 nm of ferroelectric hafnium zirconium oxide (HZO) as the ...
Paul Jacob, Pooja C. Patil, Shan Deng, Kai Ni, Khushwant Sehra, Mridula Gupta, Manoj Saxena, David MacMahon, Santosh Kurinec   +8 more
doaj   +1 more source

Ferroelectric Relaxation Oscillators and Spiking Neurons

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
We report the experimental demonstration of the ferroelectric field-effect transistor (FEFET)-based relaxation oscillators and spiking neurons. The ferroelectric relaxation oscillators and the ferroelectric spiking neurons, harnessing the abrupt ...
Zheng Wang, Asif I. Khan
doaj   +1 more source

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

, 2020
Ferroelectrics are promising for nonvolatile memories. However, the diffi culty of fabricating ferroelectric layers and integrating them into complementary metal oxide semiconductor (CMOS) devices has hindered rapid scaling.
Park, Min Hyuk, Schröder, Uwe, Slesazeck, Stefan, Mikolajick, Thomas   +3 more
core   +3 more sources

Spike-Timing Dependent Learning Dynamics in Silicon-Doped Hafnium-Oxide-Based Ferroelectric Field Effect Transistors

IEEE Journal of the Electron Devices Society
Brain-inspired computing, with its potential for energy-efficient spatio-temporal data processing, has spurred significant interest in spiking neural networks and their hardware implementations. Leveraging their non-volatile memory and analog tunability,
Masud Rana Sk, Apu Das, Gautham Kumar, Deepanshi Bhatnagar, Sourodeep Roy, Yannick Raffel, Maximilian Lederer, Konrad Seidel, Sourav De, Bhaswar Chakrabarti   +9 more
doaj   +1 more source

Sub-60-mV/decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor

IEEE Journal of the Electron Devices Society, 2017
The negative capacitance (NC) of ferroelectric materials has paved the way for achieving sub-60-mV/decade switching feature in complementary metal-oxide-semiconductor (CMOS) field-effect transistors, by simply inserting a ferroelectric thin layer in the ...
Eunah Ko, Hyunjae Lee, Youngin Goh, Sanghun Jeon, Changhwan Shin   +4 more
doaj   +1 more source

Ferroelectric [HfO2/ZrO2] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability

Advanced Physics Research, 2023
Modern microelectronic systems and applications demand an every increasing amount of non‐volatile memories that are fast, reliable, and consume little power.
David Lehninger, Aditya Prabhu, Ayse Sünbül, Tarek Ali, Fred Schöne, Thomas Kämpfe, Kati Biedermann, Lisa Roy, Konrad Seidel, Maximilian Lederer, Lukas M. Eng   +10 more
doaj   +1 more source

Thermally Engineered Sodium‐Embedded Alumina with Programmable Synaptic Plasticity for Neuromorphic Transistors

Advanced Functional Materials, EarlyView.
A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon, Jaeyeon Kim, Dong Yeon Won, Saeyoun Park, Youngjae Yoo, Seongchan Kim, Dong‐Hwan Kim, Jeong Ho Cho   +7 more
wiley   +1 more source