Giant dielectric permittivity in ferroelectric thin films : domain wall ping pong [PDF]
, 2015 This study was supported by the National Key Basic Research Program of China (No. 2014CB921004), the National Natural Science Foundation of China (Nos.
Scott, James Floyd +7 more
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Giant electrocaloric effect in the thin film relaxor ferroelectric 0.9 PbMg1/3Nb2/3O3–0.1 PbTiO3 near room temperature. [PDF]
, 2006 We have recently observed a giant electrocaloric effect (12 K in 25 V) in 350 nm sol-gel PbZr0.95Ti0.05O3 films near the ferroelectric Curie temperature of 242oC.
Zhang, Qi +18 more
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A Compact Model of Ferroelectric Field-Effect Transistor [PDF]
, 2022 In this letter, we present a compact model of ferroelectric field-effect-transistor (FEFET). The model consists of a ferroelectric (FE) capacitor model and a Berkeley Short-channel IGFET Model (BSIM), a standard SPICE MOSFET model.
Salahuddin, Sayeef +3 more
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Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors
Nanomaterials, 2020 The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-
Mircea Dragoman +3 more
doaj +1 more source
Review of ferroelectric field‐effect transistors for three‐dimensional storage applications
Nano Select, 2021 The ferroelectric field‐effect transistor (FeFET) is one of the leading contenders to succeed charge‐trap‐based flash memory (CTF) devices in the current vertically‐integrated NAND flash storage market.
Hyeon Woo Park +2 more
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Variability Study of Ferroelectric Field-Effect Transistors Towards 7nm Technology Node
IEEE Journal of the Electron Devices Society, 2021 The random variation sources have a significant influence on the performance of ferroelectric field-effect transistor (FeFET). In this work, comparative analysis on the process variation induced variability of FeFET towards a 7 nm technology node has ...
Gihun Choe, Shimeng Yu
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IEEE Journal of the Electron Devices Society, 2022 We investigated the ferroelectric properties of self-induced HfGeOx in a HfO2 film deposited on a SiGe substrate and analyzed a novel ferroelectric inverted T channel gate-all-around (IT-GAA) with a Si/SiGe bilayer channel and self-induced ferroelectric ...
Chong-Jhe Sun +7 more
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Ferroelectric Pb(Zr0.52Ti0.48)/SiC field-effect transistor
, 2003 Nonvolatile operation of ferroelectric gate field-effect transistors in silicon carbide (SiC) is demonstrated. Depletion mode transistors have been realized by forming a Pb(Zr0.52Ti0.48)O-3/Al2O3 gate stack on n-type epitaxial channel layer and p-type ...
Koo, S. M. +9 more
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Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors [PDF]
, 2022 Ferroelectrics are promising for nonvolatile memories. However, the difficulty of fabricating ferroelectric layers and integrating them into complementary metal oxide semiconductor (CMOS) devices has hindered rapid scaling.
Schroeder, Uwe +3 more
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MoTe2 on ferroelectric single-crystal substrate in the dual-gate field-effect transistor operation
, 2021 © 2021 Korean Physical Society. An exfoliated MoTe2 flake in contact with a ferroelectric single-crystal substrate was studied to examine its charge carrier modulation by neighboring ferroelectric polarization.
Kang, Haeyong +4 more
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