Results 51 to 60 of about 15,744,163 (247)

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors

Materials Research Express, 2021
In this article, an interfacial conductivity model for the surface potential and the drain current was proposed based on the metal-interface-ferroelectric-insulator-semiconductor (MIFIS) structure negative capacitance field effect transistor (NC-FET ...
Y G Xiao, K C Kang, L Y Tian, K Xiong, G Li, M H Tang, Z Li   +6 more
doaj   +1 more source

Gas sensing using an organic/silicon hybrid field-effect transistor [PDF]

, 1996
This thesis describes the fabrication and properties of novel organic/silicon hybrid field-effect transistor gas sensors. Whilst most of the work used the emeraldine base form of the conductive polymer polyaniline, the response of a device incorporating ...
Barker, Paul Simon
core  

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

Nano Convergence, 2018
Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope.
Eunah Ko, Jaemin Shin, Changhwan Shin
doaj   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Nanoscale Research Letters, 2020
Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance.
Siqing Zhang, Yan Liu, Jiuren Zhou, Meng Ma, Anyuan Gao, Binjie Zheng, Lingfei Li, Xin Su, Genquan Han, Jincheng Zhang, Yi Shi, Xiaomu Wang, Yue Hao   +12 more
doaj   +1 more source

Unified Phase‐Field Framework for Antiferroelectric, Ferroelectric and Dielectric Phases: Application to HZO Thin Films

Advanced Functional Materials, EarlyView.
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj, Sandeep Sugathan, Jiyoung Kim, Si Joon Kim, Pil‐Ryung Cha   +4 more
wiley   +1 more source

Ferroelectric-Metal Field-Effect Transistor With Recessed Channel for 1T-DRAM Application

IEEE Journal of the Electron Devices Society, 2022
The ferroelectric-metal field-effect transistor with recessed channel (RC-FeMFET) is proposed for one transistor dynamic random-access memory (1T-DRAM). Through technology computer-aided design (TCAD) simulations, the effects of inter-metal insertion on ...
Kitae Lee, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon   +4 more
doaj   +1 more source

Ferroelectric field effect transistors for electronics and optoelectronics

Applied Physics Reviews, 2023
Ferroelectric materials have shown great value in the modern semiconductor industry and are considered important function materials due to their high dielectric constant and tunable spontaneous polarization. A ferroelectric field effect transistor (FeFET) is a field effect transistor (FET) with ferroelectric polarization field introduced to regulate ...
Hanxue Jiao, Xudong Wang, Shuaiqin Wu, Yan Chen, Junhao Chu, Jianlu Wang   +5 more
openaire   +1 more source