Results 71 to 80 of about 2,381 (268)

Thin film field-effect transistor with ZnO:Li ferroelectric channel

Journal of Advanced Dielectrics
An n-type channel transparent thin film field-effect transistor (FET) using a top-gate configuration on a sapphire substrate is presented. ZnO:Li film was used as a channel, and MgF2 film as a gate insulator.
Armen Poghosyan, Ruben Hovsepyan, Hrachya Mnatsakanyan   +2 more
doaj   +1 more source

HfO2/TiO2/HfO2 tri-layer high-K gate oxide based MoS2 negative capacitance FET with steep subthreshold swing

AIP Advances, 2020
Two-dimensional (2D) materials have gained huge attention due to their ultimate thinness that can help dominate the short channel effect caused by transistor miniaturization. Molybdenum disulphide (MoS2) is one of the most promising 2D materials that has
Md. Sherajul Islam, Shahrukh Sadman, A. S. M. Jannatul Islam, Jeongwon Park   +3 more
doaj   +1 more source

The Ferroelectric Superconducting Field Effect Transistor

The ferroelectric field-effect transistor (Fe-FET) is a three-terminal semiconducting device first introduced in the 1950s. Despite its potential, a significant boost in Fe-FET research occurred about ten years ago with the discovery of ferroelectricity in hafnium oxide. This material has been incorporated into electronic processes since the mid-2000s.
Paghi, Alessandro, Borgongino, Laura, Strambini, Elia, De Simoni, Giorgio, Sorba, Lucia, Giazotto, Francesco   +5 more
openaire   +2 more sources

In‐Depth Atomic Mapping of Polarization Switching in a Ferroelectric Field‐Effect Transistor

, 2020
The ferroelectric control of a Mott transistor is a promising strategy for nonvolatile low-power electronics. Understanding the fundamental limits of the ferroelectric-field effect is challenging, as the relevant length scales are restricted to a few ...
Vistoli, Lorenzo, Lorenzo Vistoli, Zhu, Qiuxiang, Vincent Garcia, Bibes, M, Agnès Barthélémy, Xiaoyan Li, Barthélémy, Agnès, Stéphane Fusil, Fusil, Stéphane, Garcia, Vincent, Gloter, Alexandre, Manuel Bibes, Alexandre Gloter, Qiuxiang Zhu, Li, Xiaoyan   +15 more
core   +1 more source

Polarization‐Enabled Piezoelectric Tellurium–Selenium (TexSe1–x) Thin Films for Memory Switching and Artificial Synaptic Functions

Advanced Science, EarlyView.
Here, we demonstrate and investigate polarization‐enabled electromechanical responses in cryogenic physical vapor deposition (cryogenic PVD)‐deposited TexSe1‐x thin films, a tellurium‐based compound with a tunable bandgap and enhanced non‐centrosymmetry.
Chia‐Chen Chung, Mayur Chaudhary, Chia‐Hung Lo, Po‐Chien Lai, You‐Jie Lin, Ruei‐Hong Cyu, Yu‐Ren Peng, Bing‐Ni Gu, Zhao‐Feng Lou, Quynh Thi Le, Yi‐Jen Yu, Yen‐Fu Lin, Min‐Hung Lee, Ying‐Hao Chu, Chang‐Hong Shen, Der‐Hsien Lien, Yu‐Lun Chueh   +16 more
wiley   +1 more source

Two‐Dimensional Triferroics: From Fundamental Couplings to Multifunctional Applications

Advanced Science, EarlyView.
This graphic summarizes the three main types of currently reported 2D triferroic couplings. From the structural perspective, existing systems can be broadly classified into two categories, which exhibit distinct symmetry features and coupling behaviors. Beyond the lattice difference, a third type involves the interplay among ferroelectricity, magnetism,
Yang Li, Jialin Gong, Zhiqing Li
wiley   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Field-effect experiments on oxide superconductors thin films

, 2006
[ITALIANO] Negli ultimi anni la ricerca nell’ambito della fisica dello stato solido ha rivolto grande interesse allo studio delle proprietà dei sistemi fortemente correlati ed in particolare degli ossidi perovskitici dei metalli di transizione.
Prigiobbo, Antonio
core  

Strontium Bismuth Tantalate Based Ferroelectric Gate Field Effect Transistor with Yttrium Oxide as the Buffer Layer

, 1997
We report the first demonstration of an enhancement mode n-channel metal -ferroelectric-semiconductor field effect transistor (MFISFET) realized directly on silicon with yttrium oxide as the buffer layer.
Yong-Tae Kim, T. S. Kalkur, Myoung-Ho Lim   +2 more
core   +1 more source

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

Advanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo, Seokjin Oh, Minah Park, Jong Min Song, Hongseung Lee, Seohyeon Park, Sojin Jung, Seongbin Lim, Soohyun Lim, Dongsun Shin, Ji Won Heo, TaeWan Kim, Hagyoul Bae   +12 more
wiley   +1 more source