Results 71 to 80 of about 15,744,163 (247)

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Above Room Temperature Ferroelectricity in Epitaxially Strained KTaO3

Advanced Materials, EarlyView.
Through precise epitaxial engineering, the cubic and paraelectric KTaO3${\rm KTaO}_3$ is transformed into a robust ferroelectric. By leveraging lattice‐mismatched substrates to apply controlled epitaxial strain, a stable ferroelectric ground‐state is achieved with a transition temperature as high as 475 K, establishing KTaO3${\rm KTaO}_3$ as a highly ...
Tobias Schwaigert, Salva Salmani‐Rezaie, Sankalpa Hazra, Utkarsh Saha, Maya Ramesh, Aiden Ross, Betül Pamuk, Long‐Qing Chen, David A. Muller, Darrell G. Schlom, Venkatraman Gopalan, Kaveh Ahadi   +11 more
wiley   +1 more source

Thin film field-effect transistor with ZnO:Li ferroelectric channel

Journal of Advanced Dielectrics
An n-type channel transparent thin film field-effect transistor (FET) using a top-gate configuration on a sapphire substrate is presented. ZnO:Li film was used as a channel, and MgF2 film as a gate insulator.
Armen Poghosyan, Ruben Hovsepyan, Hrachya Mnatsakanyan   +2 more
doaj   +1 more source

Large–Area Graphene Electrode for Ferroelectric Control of Pb(Mg1/3Nb2/3)O3–PbTiO3 Single Crystal

Advanced Electronic Materials, 2023
Large‐area monolayer graphene is utilized as a metallic electrode for a ferroelectric single‐crystal [Pb(Mg1/3Nb2/3)O3]m–[PbTiO3]n (PMNPT). Unlike conventional metal, whose properties remain unaffected by field‐induced charge carriers, graphene's unique ...
Gwanmu Lee, Moonyoung Jung, Yoojoo Yun, Hojin Kang, Nahee Park, Haeyong Kang, Dongseok Suh   +6 more
doaj   +1 more source

Fabrication of a submicron-channel organic field-effect transistor using a controllable electrospun single fibre as a shadow mask [PDF]

, 2011
We demonstrate a simple and versatile method for the fabrication of a submicron channel for an organic field-effect transistor (OFET) using a single electrospun fibre as a shadow mask.
Sakai, H, Ishii, Y, H Sakai, Y Ishii, Murata, H, H Murata   +5 more
core   +1 more source

Direct Growth of 2D Bilayers on Au(111) for Low‐Coercive Sliding Ferroelectricity

Advanced Materials, EarlyView.
Controlled CVD growth of stacking‐defined bilayer ReS2 on Au(111) enables parallel‐stacked bilayers with intrinsic sliding ferroelectricity, a strong piezoelectric response, and an ultralow coercive voltage. Atomic‐resolution imaging and in situ measurements further reveal the decisive role of clean interfaces in achieving low‐barrier ferroelectric ...
Honglin Chen, Ke Yang, Yuhuan Li, Lingli Huang, Tianren Chen, Ming Yang, Jiong Zhao, Thuc Hue Ly   +7 more
wiley   +1 more source

HfO2/TiO2/HfO2 tri-layer high-K gate oxide based MoS2 negative capacitance FET with steep subthreshold swing

AIP Advances, 2020
Two-dimensional (2D) materials have gained huge attention due to their ultimate thinness that can help dominate the short channel effect caused by transistor miniaturization. Molybdenum disulphide (MoS2) is one of the most promising 2D materials that has
Md. Sherajul Islam, Shahrukh Sadman, A. S. M. Jannatul Islam, Jeongwon Park   +3 more
doaj   +1 more source

Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor

, 2018
The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single ...
Kang, H., Lee, S.-G., Yoojoo Yun, Dongseok Suh, Young Hee Lee, Yourack Lee, Nahee Park, Jeongmin Park, Lee, J.-H.   +8 more
core   +1 more source

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

Advanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi, Souta Kurogi, Tomoya Okuda, Riku Kikuchi, Yusuke Wakamoto, Kouei Kubota, Hikaru Sasaki, Kazuhisa Ikeda, Kanako Shojiki, Takahiro Kawamura, Toru Akiyama, Takehito Seki, Takuya Maeda   +12 more
wiley   +1 more source

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

Advanced Materials, EarlyView.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh, Alif Syafiq Kamarol Zaman, Muzhen Xu, Yuki Usami, Saptarshi Das, Hirofumi Tanaka   +5 more
wiley   +1 more source