Results 61 to 70 of about 2,381 (268)

A Physics-Based Model for Mobile-Ionic Field-Effect Transistors With Steep Subthreshold Swing

IEEE Journal of the Electron Devices Society, 2022
A physics-based model and the corresponding simulation framework for the mobile-ionic field-effect transistor (MIFET) exhibiting the ferroelectric-like behaviors are innovatively proposed based on two-dimensional (2D) Poisson’s equation and non ...
Jiajia Chen, Huan Liu, Chengji Jin, Xiaole Jia, Xiao Yu, Yue Peng, Ran Cheng, Bing Chen, Yan Liu, Yue Hao, Genquan Han   +10 more
doaj   +1 more source

Weaving Intelligence: Thermally Drawn Multimaterial Fibers Toward AI‐Enabled Smart Textiles

Advanced Materials, EarlyView.
Thermally drawn multimaterial fibers are rapidly advancing as intelligent structural units for next‐generation smart textiles. Integrating multimaterial architectures with neuromorphic and spiking‐neural‐network principles enables fabrics that can sense, compute, and adapt autonomously.
Vuong Dinh Trung, Jiaxiang Yi, Hieu Nguyen‐Duc, Tien Nu Hoang Lo, Weili Zhao, Chaoqun Dong, Fabien Sorin, Baris Caglar, Lei Wei, Tung Nguyen‐Dang   +9 more
wiley   +1 more source

High-performance solution-processed polymer ferroelectric field-effect transistors [PDF]

, 2005
We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted ...
Tanase, C, Marsman, AW, De Leeuw, DM, Gelinck, Gerwin H., Gelinck, GH, Touwslager, Fred J., Blom, PWM, Naber, Ronald C.G., Touwslager, FJ, Setayesh, S, Naber, RCG, Marsman, Albert W.   +11 more
core   +2 more sources

Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization

Nature Communications
The burgeoning interest in two-dimensional semiconductors stems from their potential as ultrathin platforms for next-generation transistors. Nonetheless, there persist formidable challenges in fully obtaining high-performance complementary logic ...
Guangdi Feng, Yifei Liu, Qiuxiang Zhu, Zhenyu Feng, Shengwen Luo, Cuijie Qin, Luqiu Chen, Yu Xu, Haonan Wang, Muhammad Zubair, Ke Qu, Chang Yang, Shenglan Hao, Fangyu Yue, Chungang Duan, Junhao Chu, Bobo Tian   +16 more
doaj   +1 more source

Ferroelectric Dynamic‐Field‐Driven Nucleation and Growth Model for Predictive Materials‐To‐Circuit Co‐Design

Advanced Materials, EarlyView.
This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang, Soohyeon Kim, Tony Chiang, Megan K. Lenox, Ian Mercer, John J. Plombon, Jon‐Paul Maria, Jon F. Ihlefeld, Wenhao Sun, Wei Lu, John T. Heron   +10 more
wiley   +1 more source

Transient nature of negative capacitance in ferroelectric field-effect transistors [PDF]

Solid State Communications, 2017
Negative capacitance (NC) in ferroelectrics, which stems from the imperfect screening of polarization, is considered a viable approach to lower voltage operation in the field-effect transistors (FETs) used in logic switches. In this paper, we discuss the implications of the transient nature of negative capacitance for its practical application.
Ng, Kwok, Hillenius, Steven J., Gruverman, Alexei   +2 more
openaire   +2 more sources

Transducers Across Scales and Frequencies: A System‐Level Framework for Multiphysics Integration and Co‐Design

Advanced Materials Technologies, EarlyView.
Transducers convert physical signals into electrical and optical representations, yet each mechanism is bounded by intrinsic trade‐offs across bandwidth, sensitivity, speed, and energy. This review maps transduction mechanisms across physical scale and frequency, showing how heterogeneous integration and multiphysics co‐design transform isolated ...
Aolei Xu, Mengyao Xiao, Zhouli Sui, Yinpeng Wang, Daoye Zheng, Yuxin Liu, Luwei Wang, Huajun Liu, Chengkuo Lee   +8 more
wiley   +1 more source

Large–Area Graphene Electrode for Ferroelectric Control of Pb(Mg1/3Nb2/3)O3–PbTiO3 Single Crystal

Advanced Electronic Materials, 2023
Large‐area monolayer graphene is utilized as a metallic electrode for a ferroelectric single‐crystal [Pb(Mg1/3Nb2/3)O3]m–[PbTiO3]n (PMNPT). Unlike conventional metal, whose properties remain unaffected by field‐induced charge carriers, graphene's unique ...
Gwanmu Lee, Moonyoung Jung, Yoojoo Yun, Hojin Kang, Nahee Park, Haeyong Kang, Dongseok Suh   +6 more
doaj   +1 more source

Controlling the on/off current ratio of ferroelectric field-effect transistors [PDF]

Scientific Reports, 2015
AbstractThe on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control over the on/off ratio.
Katsouras, I., Zhao, D., Spijkman, M.J., Li, M., Blom, P.W.M., Leeuw, D.M. de, Asadi, K.   +6 more
openaire   +4 more sources

Phase Diagrams and Piezoelectric Properties of Wurtzite Al1−x−yScxGdyN Heterostructural Alloys

Advanced Science, EarlyView.
This study demonstrates ferroelectricity and piezoelectric properties improvement of quaternary wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films, guided by density functional theory calculations. Wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films have a high optical bandgap, enhanced piezoelectric ...
Julia L. Martin, Cheng‐Wei Lee, Nate S.P. Bernstein, Thi Nguyen, Ande Bryan, Eli Cooper, John S. Mangum, Sage R. Bauers, Andriy Zakutayev, Keisuke Yazawa, Prashun Gorai, Rebecca W. Smaha   +11 more
wiley   +1 more source