Results 81 to 90 of about 15,744,163 (247)

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

Advanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald, Ali Nawaz, Amandeep Singh, Prashant Sonar   +3 more
wiley   +1 more source

Ferroelectric Negative Capacitance Field Effect Transistor

Advanced Electronic Materials, 2018
AbstractWith the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by the physical barrier termed “Boltzmann Tyranny.” Moreover, considerable heat is inevitably generated from the ultrahighly integrated circuit.
Luqi Tu, Xudong Wang, Jianlu Wang, Xiangjian Meng, Junhao Chu   +4 more
openaire   +1 more source

State of the art and perspectives of graphene field-effect transistor [PDF]

, 2022
openAnalisi scientifica dei transistor a effetto di campo in grafene. L’elaborato segue lo sviluppo e il percorso di vita in ambito elettronico di questo conosciuto materiale dalle ottime potenzialità a prima vista, ma con diverse criticità e ...
CESCHIN, MATTEO
core  

Disturb‐Resilient and Wake‐up‐Free 2T‐MFMFET Array for Storage and Computing Applications

Advanced Materials Technologies, EarlyView.
A disturb‐resilient and wake‐up‐free 2T‐MFMFET array fabricated using a FeRAM‐compatible process demonstrates excellent uniformity, a large memory window, and 3‐bit multi‐level‐cell storage capability. A newly proposed hybrid in‐memory computing scheme further enables accurate multiply–accumulate operations with minimal refresh overhead, highlighting ...
Chen‐Yi Cho, Ming‐Hung Wu, Yu‐De Lin, Po‐Chun Yeh, Kai Ni, Wen‐Yueh Jang, Tuo‐Hung Hou   +6 more
wiley   +1 more source

Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrO_x/Al₂O₃ Gate Dielectrics

IEEE Access, 2020
A hydrogen-terminated diamond (H-diamond) Field effect transistor (FET) with a ferroelectric HfZrOx/Al2O3 stacked gate dielectric was demonstrated for the first time. The HfZrOx(16 nm)/Al2O3(4 nm) gate dielectric was grown by atomic layer deposition (ALD)
Kai Su, Zeyang Ren, Yue Peng, Jinfeng Zhang, Jincheng Zhang, Yachao Zhang, Qi He, Chunfu Zhang, Yue Hao   +8 more
doaj   +1 more source

The Ferroelectric Superconducting Field Effect Transistor

The ferroelectric field-effect transistor (Fe-FET) is a three-terminal semiconducting device first introduced in the 1950s. Despite its potential, a significant boost in Fe-FET research occurred about ten years ago with the discovery of ferroelectricity in hafnium oxide. This material has been incorporated into electronic processes since the mid-2000s.
Paghi, Alessandro, Borgongino, Laura, Strambini, Elia, De Simoni, Giorgio, Sorba, Lucia, Giazotto, Francesco   +5 more
openaire   +2 more sources

Toward Perception‐Native Electronic Skin: Bio‐Inspired In‐/Near‐Sensor and Neuromorphic Computing for Humanoid Robots

Advanced Materials Technologies, EarlyView.
Dense tactile streams from across the humanoid body converge on collide in a central wiring and data bottleneck. By relocating computation closer to and then into the skin itself, near‐ and in‐sensor architectures, together with neuromorphic computing, chart a path toward perception‐native electronic skin, in which the conversion of stimulus into ...
Mijin Kim, Chang‐Jae Beak, Jiyoung Park, Youngdo Jung, Sunjong Oh, Sin‐Hyung Lee, Bo‐Yeon Lee   +6 more
wiley   +1 more source

Nondestructive Readout of Ferroelectric-Gate Field-Effect Transistor Memory With an Intermediate Electrode by Using an Improved Operation Method [PDF]

, 2008
We investigated the reading and writing of ferroelectric-gate field-effect transistor memory with an intermediate electrode (IF-FET) to achieve perfect nondestructive readouts.
Trinh, Bui Nguyen Quoc, Horita, Susumu
core   +1 more source

Phase Diagrams and Piezoelectric Properties of Wurtzite Al1−x−yScxGdyN Heterostructural Alloys

Advanced Science, EarlyView.
This study demonstrates ferroelectricity and piezoelectric properties improvement of quaternary wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films, guided by density functional theory calculations. Wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films have a high optical bandgap, enhanced piezoelectric ...
Julia L. Martin, Cheng‐Wei Lee, Nate S.P. Bernstein, Thi Nguyen, Ande Bryan, Eli Cooper, John S. Mangum, Sage R. Bauers, Andriy Zakutayev, Keisuke Yazawa, Prashun Gorai, Rebecca W. Smaha   +11 more
wiley   +1 more source