Results 81 to 90 of about 2,381 (268)

Temperature‐Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS‐Integrated Spintronic Chips

Advanced Science, EarlyView.
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang, Chuanpeng Jiang, Zhaohao Wang, Zhengyi Hou, Zhongkui Zhang, Yuanfu Zhao, Hong‐xi Liu, Weisheng Zhao   +7 more
wiley   +1 more source

Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrO_x/Al₂O₃ Gate Dielectrics

IEEE Access, 2020
A hydrogen-terminated diamond (H-diamond) Field effect transistor (FET) with a ferroelectric HfZrOx/Al2O3 stacked gate dielectric was demonstrated for the first time. The HfZrOx(16 nm)/Al2O3(4 nm) gate dielectric was grown by atomic layer deposition (ALD)
Kai Su, Zeyang Ren, Yue Peng, Jinfeng Zhang, Jincheng Zhang, Yachao Zhang, Qi He, Chunfu Zhang, Yue Hao   +8 more
doaj   +1 more source

Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing

Advanced Science, EarlyView.
A triple‐mode ferroelectric thin‐film transistor is developed by integrating Si3N4/HZO/IGZO layers to realize three independent memory modes: electric long‐term, electric short‐term, and optical short‐term. This single‐device architecture functions as both a reservoir and readout layer, achieving 92.43% MNIST accuracy. It offers a fully hardware‐based,
Hyeonho Lee, Seungjun Lee, Tae‐Hyeon Kim, Yonghee Jeong, Gwangmin An, Minsu Ko, Junsu Yu, Heung Soo Kim, Yang Chai, Sungjun Kim   +9 more
wiley   +1 more source

Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization

, 2023
We propose a higher-κ non-hysteric ferroelectric field-effect transistor (FEFET) using reversible domain wall displacement. By separately stimulating reversible and irreversible domain walls, whose concepts have been experimentally suggested recently ...
Lee, Dong Hyun, Park, Min Hyuk, Shim, Joonsup, Kim, Sanghyeon, Kuk, Songhyeon, Han, Seungmin, Kim, Bong Ho, Han, Jae-Hoon   +7 more
core   +1 more source

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices

Advanced Science, EarlyView.
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen, Yong‐Jyun Wang, Zi‐Qin Hong, Chien‐Hua Wang, Yi‐Ning Wang, Jia De Cheng, Chun‐Wei Huang, Ying‐Hao Chu, Wen‐Wei Wu   +8 more
wiley   +1 more source

2-Bit/Cell Operation of Hf_0.5Zr_0.5O₂ Based FeFET Memory Devices for NAND Applications

IEEE Journal of the Electron Devices Society, 2019
The multilevel memory performances of ferroelectric field effect transistor (FeFET) with Hf0.5Zr0.5O2 (HZO) ferroelectric thin film are investigated. First, similar retention characteristics are observed for intermediate and saturated polarization states
Binjian Zeng, Min Liao, Qiangxiang Peng, Wenwu Xiao, Jiajia Liao, Shuaizhi Zheng, Yichun Zhou   +6 more
doaj   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

The Balancing Act in Ferroelectric Transistors: How Hard Can It Be?

Micromachines, 2018
For some years now, the ever continuing dimensional scaling has no longer been considered to be sufficient for the realization of advanced CMOS devices.
Raymond J. E. Hueting
doaj   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

An Organic Field-Effect Transistor with Programmable Polarity

, 2005
\u3cp\u3eA new type of organic field effect transistor (FET) consisting of an ambipolar semiconductor with a ferroelectric functionalized gate dielectric was presented.
Leeuw, D M De, Marsman, Albert W.,, Naber, Ronald C.G.,, Naber, R C G, Leeuw, Dago M. de,, Blom, PWM Paul, Marsman, Albert W, Gelinck, Gerwin H.,, Gelinck, G Gerwin, Blom, Paul W.M.,   +9 more
core   +2 more sources